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Memory based on polymer composite material and preparation method thereof

A composite material and polymer technology, applied in the field of memory based on polymer composite materials and its preparation, can solve the problems of poor memory stability and storage performance, difficulty in large-scale preparation of memory, etc., and achieve low cost and easy large-scale Synthesis and preparation of simple and controllable effects

Inactive Publication Date: 2017-04-26
SHENZHEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of the above-mentioned deficiencies in the prior art, the object of the present invention is to provide a memory based on a polymer composite material and its preparation method, aiming at solving the difficulty of realizing large-scale preparation of the memory based on the polymer composite material and the problems of the existing memory. Issues with poor stability and storage performance

Method used

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  • Memory based on polymer composite material and preparation method thereof
  • Memory based on polymer composite material and preparation method thereof
  • Memory based on polymer composite material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0047] Preparation of functional group modified gold nanorods:

[0048] Firstly mix cetyltrimethylammonium bromide and tetrachloroalloy acid evenly, then add sodium borohydride and stir for 1 min, and then place it at room temperature for 2 hours to obtain a seed solution for later use;

[0049] Mix hexadecyltrimethylammonium bromide with silver nitrate, tetrachloroalloy acid and vitamin C evenly, then add the seed solution, and leave for 28 hours to generate a gold nanorod solution;

[0050] Firstly, the surface modification material is added to the gold nanorod solution and mixed evenly, and then dichlorobenzene is quickly added to obtain the functional group modified gold nanorod solution.

[0051] Fabrication of memories based on polymer composites:

[0052] Deposit a bottom electrode with a thickness of 80nm on a flexible substrate; spin-coat a polymer composite material on the bottom electrode, and form a polymer composite film with a thickness of 50nm after thermal ann...

Embodiment 2

[0054] Preparation of functional group modified gold nanorods:

[0055] Firstly mix cetyltrimethylammonium bromide and tetrachloroalloy acid evenly, then add sodium borohydride and stir for 3 minutes, and then leave it at room temperature for 3 hours to obtain a seed solution for later use;

[0056] Mix hexadecyltrimethylammonium bromide with silver nitrate, tetrachloroalloy acid and vitamin C evenly, then add the seed solution, and leave it for 33 hours to generate a gold nanorod solution;

[0057] Firstly, the surface modification material is added to the gold nanorod solution and mixed evenly, and then dichlorobenzene is quickly added to obtain the functional group modified gold nanorod solution.

[0058] Fabrication of memories based on polymer composites:

[0059] Deposit a bottom electrode with a thickness of 100nm on a flexible substrate; spin-coat a polymer composite material on the bottom electrode, and form a polymer composite film with a thickness of 70nm after the...

Embodiment 3

[0061] Preparation of functional group modified gold nanorods:

[0062] Firstly mix cetyltrimethylammonium bromide and tetrachloroalloy acid evenly, then add sodium borohydride and stir for 5 minutes, and then place it at room temperature for 4 hours to obtain a seed solution for later use;

[0063] Mix hexadecyltrimethylammonium bromide with silver nitrate, tetrachloroalloy acid and vitamin C evenly, then add the seed solution, and leave it for 36 hours to generate a gold nanorod solution;

[0064] Firstly, the surface modification material is added to the gold nanorod solution and mixed evenly, and then dichlorobenzene is quickly added to obtain the functional group modified gold nanorod solution.

[0065] Fabrication of memories based on polymer composites:

[0066] Deposit a bottom electrode with a thickness of 120nm on a flexible substrate; spin-coat a polymer composite material on the bottom electrode, and form a polymer composite film with a thickness of 100nm after th...

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Abstract

The invention provides a memory based on a polymer composite material and a preparation method thereof. The method comprises the following steps: A, depositing a bottom electrode on a flexible substrate; B, spin-coating the bottom electrode with a polymer composite material, and forming a polymer composite film through thermal annealing treatment; and C, depositing a top electrode on the polymer composite film. According to the invention, a polymer composite material doped with gold nanorods is prepared first using a solution method, and then, a memory is prepared based on the polymer composite material. The preparation method of the invention is simple and controllable, is of low cost, and can realize large-scale synthesis easily.

Description

technical field [0001] The invention relates to the field of memory, in particular to a memory based on a polymer composite material and a preparation method thereof. Background technique [0002] With the rapid development of electronics and information industry, the amount of information that people face in their daily life is growing explosively. The emergence of various new electronic devices has made people have higher requirements for storage devices, and the storage is developing towards faster access speed, higher storage density, and longer storage life. The common storage materials currently on the market are still dominated by inorganic semiconductor materials. In the past half century, research and production based on silicon semiconductor materials have achieved great success in the field of microelectronics. However, with the continuous reduction of the line width of integrated circuits in silicon semiconductor devices, quantum effects begin to appear, and man...

Claims

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Application Information

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IPC IPC(8): H01L51/05H01L51/30H01L51/40
CPCH10K71/12H10K85/10H10K10/701
Inventor 周晔韩素婷
Owner SHENZHEN UNIV
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