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GaN-based semiconductor device and manufacturing method thereof

A nitride semiconductor and gallium nitride-based technology, applied in the field of microelectronics, can solve problems affecting device reliability and inappropriateness, and achieve the effects of improving conduction characteristics, increasing reliability, and reducing inverse piezoelectric deformation

Active Publication Date: 2019-12-20
XIAMEN SANAN INTEGRATED CIRCUIT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the methods currently used to increase the concentration of two-dimensional electron gas are either not suitable for actual production due to the limitation of the growth process, or have disadvantages that affect the reliability of the device.

Method used

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  • GaN-based semiconductor device and manufacturing method thereof
  • GaN-based semiconductor device and manufacturing method thereof
  • GaN-based semiconductor device and manufacturing method thereof

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Embodiment Construction

[0038] In order to make the purposes, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments It is a part of the embodiments of this application, not all of them. The components of the embodiments of the application generally described and illustrated in the figures herein may be arranged and designed in a variety of different configurations.

[0039] Accordingly, the following detailed description of the embodiments of the application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely represents selected embodiments of the application. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art w...

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Abstract

The invention provides a GaN-based semiconductor device and a manufacturing method thereof. The GaN-based semiconductor device comprises a substrate, a nitride semiconductor layer formed based on oneside of the substrate, and a composite barrier layer formed based on one side of the nitride semiconductor layer away from the substrate. The composite barrier layer comprises at least two groups of superlattice barrier layers which are arranged in a stacked manner, each group of superlattice barrier layers comprises a first barrier layer and a second barrier layer which are arranged in a stackedmanner, and Al component content in the first barrier layer is higher than that in the second barrier layer. Thus, the two-dimensional electron gas concentration of a channel is guaranteed through thefirst barrier layer with the higher Al component content to improve the conduction characteristic of the device, the equivalent piezoelectric polarization coefficients of the superlattice barrier layers are reduced through the second barrier layer with the lower Al component content, so that the inverse piezoelectric deformation of the device under a high voltage is reduced, and the reliability of the device is improved.

Description

technical field [0001] The present application relates to the technical field of microelectronics, in particular, to a gallium nitride-based semiconductor device and a manufacturing method thereof. Background technique [0002] As an important third-generation wide-bandgap semiconductor material, gallium nitride-based III-V compound semiconductors have high band gap, high voltage resistance, high temperature resistance, radiation resistance, high thermal conductivity, high electron saturation rate, and chemical stability. Excellent properties such as good properties and high concentration of two-dimensional electron gas at the heterojunction interface have been extensively and in-depth researched by researchers at home and abroad. High Electron Mobility Transistor (HEMT) made of GaN-based materials has been widely used in high-temperature, high-frequency, high-voltage, high-power, radiation-resistant microwave electronic devices and power electronic devices. [0003] When G...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/778H01L29/205H01L29/15H01L21/335
CPCH01L29/151H01L29/205H01L29/66462H01L29/7781
Inventor 林科闯房育涛刘波亭毛张文李健张恺玄杨健
Owner XIAMEN SANAN INTEGRATED CIRCUIT
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