GaN-based semiconductor device and manufacturing method thereof

A nitride semiconductor and gallium nitride-based technology, applied in the field of microelectronics, can solve problems affecting device reliability and inappropriateness, and achieve the effects of improving conduction characteristics, increasing reliability, and reducing inverse piezoelectric deformation
CN110600547AActive Publication Date: 2019-12-20XIAMEN SANAN INTEGRATED CIRCUIT
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
XIAMEN SANAN INTEGRATED CIRCUIT
Publication Date
2019-12-20

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Abstract

The invention provides a GaN-based semiconductor device and a manufacturing method thereof. The GaN-based semiconductor device comprises a substrate, a nitride semiconductor layer formed based on oneside of the substrate, and a composite barrier layer formed based on one side of the nitride semiconductor layer away from the substrate. The composite barrier layer comprises at least two groups of superlattice barrier layers which are arranged in a stacked manner, each group of superlattice barrier layers comprises a first barrier layer and a second barrier layer which are arranged in a stackedmanner, and Al component content in the first barrier layer is higher than that in the second barrier layer. Thus, the two-dimensional electron gas concentration of a channel is guaranteed through thefirst barrier layer with the higher Al component content to improve the conduction characteristic of the device, the equivalent piezoelectric polarization coefficients of the superlattice barrier layers are reduced through the second barrier layer with the lower Al component content, so that the inverse piezoelectric deformation of the device under a high voltage is reduced, and the reliability of the device is improved.
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Description

technical field

[0001] The present application relates to the technical field of microelectronics, in particular, to a gallium nitride-based semiconductor device and a manufacturing method thereof. Background technique

[0002] As an important third-generation wide-bandgap semiconductor material, gallium nitride-based III-V compound semiconductors have high band gap, high voltage resistance, high temperature resistance, radiation resistance, high thermal conductivity, high electron saturation rate, and chemical stability. Excellent properties such as good properties and high concentration of two-dimensional electron gas at the heterojunction interface have been extensively and in-depth researched by researchers at home and abroad. High Electron Mobility Transistor (HEMT) made of GaN-based materials has been widely used in high-temperature, high-frequency, high-voltage, high-power, radiation-resistant microwave electronic devices and power electronic devices.

[0003] When G...

Claims

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