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Insulated gate bipolar transistor

A bipolar transistor, insulated gate technology, used in semiconductor devices, electrical components, circuits, etc., can solve problems such as device temperature rise, thermal breakdown, and holes that cannot be pumped away

Active Publication Date: 2013-05-08
HUAWEI TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For the situation of widely used inductive loads, since the inductor current cannot be mutated, that is, the current flowing through the IGBT cannot be mutated, so all the current flowing through the IGBT must be provided by the hole current formed by the holes injected into the drift region by the collector. , for the terminal region of the IGBT device, a large number of holes are injected into the drift region from the collector of the device. However, the injected holes cannot be directly drawn away from the floating field ring structure of the terminal, but at the equipotential ring of the terminal concentration, resulting in longer hole recombination time, slower turn-off speed, and increased turn-off loss; in addition, a local accumulation effect of hole current is formed at the equipotential ring of the terminal, resulting in local high voltage and large current, causing the device temperature to sharply increase Rising, causing dynamic avalanche breakdown and thermal breakdown of the device, causing the device to burn

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] Embodiment one, such as image 3 As shown, an IGBT provided by Embodiment 1 of the present invention includes: a cell region 100 and a terminal region 200 surrounding the cell region. The cell region 100 includes a gate 101, an emitter 102, a p well region 103, an n+ emitter region 104 and a p+ emitter region 105 contained in the p well region 103 in contact with the emitter, a trench gate Region 107, gate oxide region 106, and oxide isolation layer region 206; wherein, a plurality of trench-type gate regions 107 are connected together by metal to form the gate 101 of IGBT; p well region 103 and contained in p well region The n+ emitter region 104 and the p+ emitter region 105 in 103 are connected together by metal to form the emitter 102 of the IGBT. The terminal region 200 includes a first field ring p region 201, several field ring p regions 202, a p+ region 204 connected to the emitter 102, a field plate region 205, an equipotential ring n region 203 located at the...

Embodiment 2

[0060] Embodiment two, such as Figure 5As shown, an IGBT provided by Embodiment 2 of the present invention includes: a cell region 100 and a terminal region 200 surrounding the cell region. The cell region 100 includes a gate 101, an emitter 102, a p well region 103, an n+ emitter region 104 and a p+ emitter region 105 contained in the p well region 103 in contact with the emitter, a trench gate Region 107, gate oxide region 106, and oxide isolation layer 206; wherein, a plurality of trench gate regions 107 are connected together by metal to form the gate 101 of the IGBT; p well region 103 and contained in p well region 103 The inner n+ emitter region 104 and p+ emitter region 105 are connected together by metal to form the emitter 102 of the IGBT. The terminal region 200 includes a first field ring p region 201, several field ring p regions 202, a p+ region 204 connected to the emitter 102, a field plate region 205, an equipotential ring n region 203 located at the edge of ...

Embodiment 3

[0075] Embodiment three, such as Figure 10 As shown, an IGBT provided by Embodiment 3 of the present invention includes: a cell region 100 and a terminal region 200 surrounding the cell region. The cell region 100 includes a gate 101, an emitter 102, a p well region 103, an n+ emitter region 104 and a p+ emitter region 105 contained in the p well region 103 in contact with the emitter, a trench gate Region 107, gate oxide region 106, and oxide isolation layer 206; wherein, a plurality of trench gate regions 107 are connected together by metal to form the gate 101 of the IGBT; p well region 103 and contained in p well region 103 The inner n+ emitter region 104 and p+ emitter region 105 are connected together by metal to form the emitter 102 of the IGBT. The terminal region 200 includes a first field ring p region 201, several field ring p regions 202, a p+ region 204 connected to the emitter 102, a field plate region 205, an equipotential ring n region 203 located at the edge...

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Abstract

The invention provides an insulated gate bipolar transistor (IGBT), and relates to the field of integrated circuit manufacturing. The problem of tail currents when the IGBT is turned off can be solved. The IGBT comprises a cellular area which is placed on the front face, a terminal area which is surrounded the cellular area, an IGBT drift region of a first conduction type and an IGBT collector region which is placed on the back face. The IGBT collector region and the IGBT drift region are connected and placed below the IGBT drift region, wherein the IGBT drift region comprises a first drift region which is placed below the cellular area and a second drift region which is placed below the terminal area. The IGBT collector region comprises a heavy doping cellular collector region of a second conduction type and a non-conductive isolation area adjacent to the cellular collector region, wherein the cellular collector region is placed below the first drift region, the length of the non-conductive isolation area is smaller than or equal to the length of the terminal area, and the thickness of the non-conductive isolation area is greater than or equal to the thickness of the cellular collector region. Shutoff losses of the IGBT can be lowered, and the reliability of shutoff is improved.

Description

technical field [0001] The invention relates to the field of integrated circuit manufacturing, in particular to an insulated gate bipolar transistor. Background technique [0002] Insulated Gate Bipolar Transistor (English full name Insulated Gate Bipolar Transistor, English abbreviation IGBT) is composed of bipolar transistor (English full name Bipolar Junction Transistor, English abbreviation BJT) and metal-oxide layer-semiconductor-field-effect transistor (Metal- Oxide-Semiconductor Field-Effect Transistor, MOSFET) is a composite fully-controlled voltage-driven power semiconductor device. [0003] The traditional IGBT structure has two opposite main surfaces, namely, the first main surface and the second main surface; wherein, the first main surface is the front of the chip, including the cell area and the terminal area; the second main surface is the chip's The back side includes the IGBT collector area; in addition, it also includes the IGBT drift area. [0004] figu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/739H01L29/08
CPCH01L29/739H01L29/0619H01L29/0638H01L29/0661H01L29/404H01L29/7397
Inventor 朱以胜张金平
Owner HUAWEI TECH CO LTD
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