SA-LIGBT device with grid-controlled collector

Abstract

The invention relates to an SA-LIGBT device with a grid-controlled collector, and belongs to the field of electronic devices. The device comprises a transmitter, a grid, an N-type drift area and a grid-controlled collector area from the left to right. The grid-controlled collector area comprises an N-buffer I buffer layer, a P-collector, an N-buffer II buffer layer, a P-type electron barrier layerP-base and an N-collector from the left to right. A transverse grooved grid is arranged under the P-type electron barrier layer P-base and the N-collector. When in forward conduction, the P-type electron barrier layer P-base can stop electrons from flowing to the N-collector, and the short-circuit resistance of the collector is increased. Through adjusting the length and concentration of the P-type electron barrier layer P-base, the short-circuit resistance of the collector can be adjusted, and the snapback effect can be eliminated. When being turned off, the P-type electron barrier layer canbe transformed to the N-type under the grid-controlled voltage, the electron channel is formed, the carrier extraction efficiency is improved, and thus the off time of the device is effectively reduced.

Description

technical field [0001] The invention belongs to the field of electronic devices and relates to a SA-LIGBT device with gate-controlled collectors. Background technique [0002] IGBT (Insulated Gate Bipolar Transistor, Insulated Gate Bipolar Transistor), commonly known as the "CPU" of power electronic devices, is the core device of electronic power systems. LIGBT (Lateral Insulated Gate Bipolar Transistor, Lateral Insulated Gate Bipolar Transistor) is easy to integrate, and is usually used in power intelligent systems, and is a typical representative of bipolar devices. When the LIGBT is turned on, it has two kinds of carriers, electrons and holes, so that it has an extremely low turn-on voltage drop. However, a large number of carriers stored in the drift region will cause the transistor to have a tail current phenomenon when it is turned off, causing the transistor to generate a large turn-off loss. [0003] In order to solve the problem of large turn-off loss and long tur...

AI Technical Summary

Problems solved by technology

In the process of changing from unipolar conduction mode to bipolar conduction mode, the voltage will have an obvious rebound phenomenon, resulting in uneven current distribution and seriously affecting the reliability of the device.

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