The present application belongs to the field of
semiconductor technology and provides an
LDMOS device with a
metal field plate and a preparation method thereof. The
LDMOS device includes: a
semiconductor substrate, a
buried oxide region, a drift region, a drain region, a P-type well region, a source region, a P-type base region, a
passivation layer, a gate region, a gate extension region, multiple
metal field plates, a source
electrode, a drain
electrode, and a gate
electrode. By disposing multiple
metal field plates at the interface between the
buried oxide region and the drift region, each metal field plate generates an
electric field spike, thereby forming multiple high electric fields at the bottom of the drift region. This not only improves the longitudinal withstand
voltage of the device, but also uses the multiple
electric field spikes to increase the surface
electric field of the
LDMOS device, making the lateral electric field distribution more uniform and improving the lateral withstand
voltage. The gate extension region can form a low-resistance
electron channel above the drift region, thereby reducing the on-resistance of the LDMOS device, thereby achieving the purpose of reducing the on-resistance of the device on the basis of improving the
breakdown voltage of the device.