34 results about "Electron channel" patented technology

The invention relates to a silver-iron diatom modified carbon nitride (AgFe-CN) photocatalytic material capable of synchronously removing organic pollutants and pathogenic bacteria as well as a preparation method and application of the silver-iron diatom modified carbon nitride (AgFe-CN) photocatalytic material, and belongs to the field of environmental chemistry and material science. The catalyst is prepared through a supramolecular coordination-thermal polymerization method, wherein silver and iron are highly dispersed on a porous carbon nitride substrate in a monatomic form. The monatomic Ag and Fe synergistically construct an electron channel, and jointly endow the catalyst with excellent photocatalytic activity. The preparation method comprises the following steps: combining the catalyst with peroxymonosulfate (PMS) to construct an AgFe-CN / PMS / Vis photocatalytic Fenton-like synergistic system; in the system, the catalyst can lead generation of an advanced oxidation system which takes singlet oxygen as a main component and cooperates with superoxide free radicals and high-valence iron oxygen species, so that efficient and synchronous removal of various organic pollutants and pathogenic microorganisms in the water body is realized. The catalyst is simple in preparation process and mild in condition, and the constructed water treatment method is high in efficiency, high in universality and good in stability and has wide application prospects.

The disclosure relates to a power device (100), comprising: an n-type doped silicon carbide drift layer (103); a p-type doped well (104); an n-type doped source contact (106); an n-type doped substrate (101) acting as a drain contact; and a composite gate dielectric layer (111, 112) comprising a first dielectric layer (111) contributing to a first gate threshold voltage (V1) of the power device and a second dielectric layer (112) contributing to a second gate threshold voltage (V2) of the power device which is occasionally lower than the first gate threshold voltage (V1). The first dielectric layer (111) is overlapping the n-type doped source contact (106) and a first portion of the p-type doped well (104) to enable formation of a first part of a gate electrons channel (107). The second dielectric layer (112) is arranged above the remaining portion of the p-type doped well (104) to enable formation of the remaining part of the gate electrons channel (107) and thus current conduction through the gate electrons channel (107) in case that the second gate threshold voltage (V2) reaches the first gate threshold voltage (V1).

The invention discloses a naphthoquinone-based gas sensitive material, a preparation method and application of the naphthoquinone-based gas sensitive material in an ammonia gas sensor, and belongs to the technical field of gas sensors. The material is composed of divalent metal ions such as copper, nickel and cobalt and a polysubstituted naphthoquinone organic ligand, forms a one-dimensional chain structure, has a high specific surface area, an ordered electron channel and excellent molecular recognition capability, and can detect toxic gases such as ammonia gas at room temperature with high sensitivity. Macroscopic preparation of the material can be realized through solvothermal one-step reaction. Compared with the prior art, the one-dimensional coordination structure and ligand site engineering synergistically improve the carrier transport and molecular recognition capability, can realize continuous, real-time and selective detection of ammonia gas under complex working conditions, and has the advantages of high yield, large-scale preparation and excellent device application prospect.

The invention discloses an intelligent battery charging control method, which relates to the technical field of intelligent battery charging and comprises the following steps of: extracting time continuous characteristics of gradient mutation according to a thermal response dynamic mapping surface, generating an electrochemical polarization direction evolution track and constructing a polarization mutation recognition template; the deviation rate of the electron migration path relative to the ideal conductive path is calculated, and an electron channel correction function is established; the charging current density of the abrupt change area is adjusted in a segmented mode through a correction function, and local potential inversion is weakened through a buffer type current control strategy; and constructing a layered energy distribution mechanism according to a coupling relationship between the polarization direction and the temperature response, and implementing regional control on the charging power. Precise identification and dynamic regulation and control of the polarization direction are realized by constructing a thermal response dynamic mapping surface, local potential inversion and electron aggregation are prevented in advance, energy input and thermal diffusion balance are realized through layered energy distribution and regionalized power control, the charging safety of a battery cell is improved, and the service life of the battery cell is prolonged.

The invention discloses a catalyst for wastewater COD (Chemical Oxygen Demand) in-situ degradation and a preparation method of the catalyst, and belongs to the field of catalysts. A four-stage synergistic catalysis system of a metal phthalocyanine active matrix, a thiophene conjugated bridging chain, a cyclodextrin functional modification layer and a cross-linked network skeleton is adopted; the catalyst has the characteristics of controllable reaction path, designable product structure and efficient catalytic performance, a metal phthalocyanine compound matrix is used as a core active unit, a catalytic active center is formed through metal-nitrogen coordination, and a thienyl bridged ring structure is used as an electron transfer carrier, so that the catalytic activity of the catalyst is improved. A continuous electron channel for connecting a phthalocyanine active center and a cross-linked network is constructed through a conjugated system, electron migration is accelerated, a cyclodextrin functional modification layer serves as a performance optimization unit, and an adaptive bridge of the catalyst and a wastewater system is constructed through subject-object inclusion and hydrophilic modification, so that the performance of the catalyst is improved. Finally, a synergistic catalysis system with active center capable of efficiently generating active oxygen, conjugate bridging capable of guaranteeing electron transfer and cyclodextrin capable of optimizing application performance is formed.

The application discloses a grating type gate voltage structure-based electrical anisotropy device and a preparation method thereof. A grating type gate voltage electrode structure is arranged on a heterojunction to establish a size-in-situ adjustable electric potential field, form an artificial stripe phase electron channel, and realize in-situ regulation and control of horizontal resistance and vertical resistance of a lower two-dimensional electron gas. Great positive magnetoresistance and negative magnetoresistance effects are realized in two mutually perpendicular directions, and great electrical anisotropy is regulated and controlled. The grating type gate voltage electrode structure is grown on a cross-shaped semiconductor heterojunction, great planar electrical anisotropy in different current directions under a magnetic field can be realized, the size of electrical anisotropy of the device can be in-situ regulated and controlled by changing the size of the gate voltage, and in addition, the method has the advantages of simple micro-processing technology, good universality, large-area batch production and the like.

According to the semiconductor device and the preparation method thereof provided by the invention, the barrier layer with the etching selection ratio (generally higher etching selection ratio) is formed in the barrier layer, so that the barrier layer not only has the effect of the barrier layer, but also has the effect of the etching stop layer; the problem that an etching interface between an existing gate material layer and a barrier layer is difficult to control due to the fact that the gate material layer is difficult to etch is solved, an etching interface between a second barrier layer and a barrier layer is changed, etching can be effectively guaranteed to be stopped on the surface of the barrier layer based on the excellent etching selection ratio effect of the barrier layer, and the etching efficiency is improved. The potential barrier layer composed of the barrier layer and the first potential barrier layer is reduced or even prevented from being damaged to influence the performance of an electron channel below the potential barrier layer; and meanwhile, a second barrier layer is additionally arranged below the gate structure, and the concentration of two-dimensional electron gas in the channel can be regulated and controlled by freely designing and adjusting parameters such as material, thickness and doping of the second barrier layer, so that the applicability of the device is widened.

The embodiment of the invention discloses electrode slurry and a preparation method thereof, a pole piece and a supercapacitor, and belongs to the technical field of supercapacitors. The invention provides a preparation method of electrode slurry, and the preparation method comprises the following steps: dispersing an active substance, graphene and a binder in a solvent to obtain a glue solution; and mixing the glue solution with the carbon nanotubes to prepare the electrode slurry. The active substance and the graphene are mixed, the graphene and the active material form surface contact, the interface contact resistance is reduced, meanwhile, the graphene can be connected with a plurality of active substances, and an electron channel is provided for transmission of electrons among different particles; the lamellar structure of the graphene creates a two-dimensional nano channel for the embedding and emigration of ions, and guides the ions to be uniformly distributed on the surface of the active material, thereby improving the dynamic performance. And the obtained glue solution is mixed with the carbon nanotubes, and the carbon nanotubes are connected with different active substances to form a three-dimensional conductive network, so that the high-rate performance is further improved.

The embodiment of the utility model discloses a light-emitting device, for example, comprising a first epitaxial structure which comprises an N-type GaN layer, a light-emitting layer and a P-type GaN layer which are arranged in sequence; the second epitaxial structure comprises an electron channel layer and a barrier layer which are arranged in sequence; and a connection layer; wherein the connection layer is connected between the first epitaxial structure and the second epitaxial structure, the material of the connection layer comprises GaN, and the thickness of the connection layer is 200 to 800 nanometers. According to the embodiment of the utility model, the GaN connecting layer is arranged to integrate the two epitaxial structures on one light-emitting device, so that the light-emitting device provided by the embodiment of the utility model not only realizes light emitting, but also realizes constant-current light emitting, and can more flexibly solve the problem that the head and the tail of an existing LED lamp head are uneven in light emitting brightness; and the two epitaxial structures are integrated on one light-emitting device, so that the light-emitting device provided by the embodiment of the utility model can be more flexibly applied to a light-emitting device needing constant current.

The invention discloses a film layer monitoring device and epitaxy equipment, the film layer monitoring device is used for vapor phase epitaxy equipment, and the film layer monitoring device comprises an electron beam emission mechanism which comprises an electron emission assembly and an electron channel; the electron emitting assembly is used for generating electron beams; an inlet of the electron channel is communicated with an emitting end of the electron emitting assembly, and an outlet of the electron channel is arranged at a position close to the edge of the wafer; electron beams generated by the electron emitting assembly are glanced to the surface of the wafer through the electron channel so as to be diffracted on the surface of the wafer to form diffracted electron beams; a receiving end of the electron beam receiving mechanism is located in the epitaxial chamber; the electron beam receiving mechanism is configured to capture diffracted electron beams and convert the diffracted electron beams into quantizable signals; the electron beam receiving mechanism is further configured to perform in-situ monitoring on the wafer film layer based on the quantizable signal. The crystal quality and the deposition thickness of the film layer can be monitored in situ in the film growth process, and high-quality imaging of electron diffraction signals can be ensured.

The invention relates to the technical field of glucose electrochemical sensors, in particular to an OECT flexible glucose sensor with a vertical structure and a preparation method of the OECT flexible glucose sensor with the vertical structure, the sensor adopts a vertical structure design, a drain electrode, a source electrode and a channel are vertically arranged, the integration level of the sensor is improved, and the size of the sensor is reduced. Meanwhile, the electrochemical performance and the mechanical performance of the PEDOT: PSS material are improved by doping PVA, and the electrochemical performance of the channel layer is improved. Due to the adoption of the vertical structure, the PEDOT: PSS-PVA composite material can form a nano-scale flexible channel layer through a high-speed spin-coating process, so that an electron channel between a drain electrode and a source electrode is effectively shortened, the response speed of the device is remarkably accelerated, the modulation efficiency of channel current is greatly improved, the transconductance of the channel layer is effectively improved, and the performance of the device is improved. And meanwhile, the flexibility of the channel layer is also improved, so that the channel layer still has a relatively good transconductance retention rate under the action of high-cycle stress, and the sensor can be applied to application scenes such as wearable equipment and the like.

SPAD device with: a silicon substrate (102) with a recess (104) in a top side (102u) of the silicon substrate (102); a p-region (106) which is located in the silicon substrate (102) under a bottom of the recess (104); an n-avalanche region (108) located in the silicon substrate (102) below the p-region (106) and meeting the p-region (106) at a pn junction (110); a germanium region (112) which is arranged in the recess (104) above the pn junction (110); and an intrinsically conductive silicon region (118) located between an upper part of the p-region (106) and a lower part of the germanium region (112), wherein the intrinsically conductive silicon region (118) is configured to act as an electron channel extending over the entire distance between the pn junction (110) and the germanium region (112), wherein the germanium region has the following: an upper germanium region with a first p-doping concentration; and a lower germanium region with a second p-doping concentration, wherein the second p-doping concentration is lower than the first p-doping concentration, and the SPAD device further features the following: a sidewall germanium region that extends continuously along an outer sidewall of the germanium region and traverses the upper germanium region and the lower germanium region.

The application discloses an oxide sintered body and a preparation method thereof, an oxide target material and application, and relates to the technical field of semiconductors. By introducing rare earth oxides and a second metal compound into an indium oxide sintered body, the second metal compound being a metal oxide and / or a metal fluoride, on the one hand, a coupling electron channel can be formed with the indium electron orbit of the indium oxide, the characteristics of a thin film made of the sintered body can be improved, and the performance of a device can be improved; on the other hand, the rare earth oxides form small crystal grains embedded in the gaps of the main body material crystal grains, a dense sintered body is formed, and therefore a highly dense ceramic target material can be obtained. The oxide sintered body provided by the application can obtain a sintered body or a target material with high density by optimizing the composition and the preparation method, and is beneficial to making the grain size controllable and the distribution controllable.

The invention discloses a gel electrolyte with efficient electric field regulation and control as well as a preparation method and application thereof, and the preparation method comprises the following steps: step 1, dissolving acrylamide and zinc salt in water, and uniformly stirring to obtain a mixture A; 2, adding an initiator and a cross-linking agent into the mixture A, and uniformly stirring to obtain a mixture B; and 3, uniformly coating a conductive porous membrane with the mixture B, and then carrying out hot pressing treatment to obtain the gel electrolyte with the efficient electric field regulation and control function. The gel electrolyte with excellent coulombic efficiency and rich electron channel density is prepared by taking the conductive porous membrane, the zinc salt and the acrylamide as main materials, and the zinc ion battery can be endowed with excellent electrochemical performance.

The invention discloses a trace heavy metal conductivity detection method, and relates to the technical field of heavy metal conductivity detection.The trace heavy metal conductivity detection method comprises the steps that a conduction framework layer and a selective enrichment layer are constructed on an inert substrate in an in-situ mode, and interpenetrating compatibility is conducted at pore channels to form a through interface; the conductive skeleton layer is composed of reduced graphene and a carbon nanotube interpenetrating network, and is provided with in-plane oriented and vertically through electronic channels; the selective enrichment layer is a chelating polymer nano brush which is subjected to post-modification of chelating sites in metal organic framework holes or surface-initiated grafting, and the hole channels are kept communicated and not blocked; comprising the following steps: locking a background conductance baseline, realizing selective enrichment by mild disturbance, reading and synchronizing an environment drift parameter set in the same time window without changing system composition, executing single difference to enable a differential conductance signal to be a unique target indication quantity, and giving a result by combining a material calibration curve. The problem that weak signals in a complex water sample are masked and drifted and are difficult to deduct is solved.

The invention discloses a multifunctional network solid electrolyte as well as a preparation method and application thereof. The multifunctional network solid electrolyte is prepared from a modified solid electrolyte material and a functionalized carbon material, and the modified solid electrolyte material and the functionalized carbon material form a three-dimensional interpenetrating network structure with continuous ion and electron channels through chemical bonding. When the multifunctional network solid electrolyte is used as a positive electrode additive to be applied to an electrochemical energy storage device, ions and electrons are conducted, so that collaborative transportation of lithium ions and electrons in a positive electrode material is promoted, and the interface impedance is effectively reduced, thereby improving the rate capability and cycling stability of a battery; in addition, due to the transition metal element doped in the modified solid electrolyte, the solid electrolyte can play a structural function and increase the capacity at the same time, and the energy density of the battery is improved. The composite solid electrolyte can be applied to various electrochemical energy storage devices such as lithium ion batteries, lithium sulfur batteries and solid metal batteries, and finally the comprehensive performance of the batteries is improved.

This application relates to an ion-electron dual continuous conductor cathode composite material, a solid-state cathode, and a lithium battery. The method includes: metal-organic framework particles with regular one-dimensional channels; a lithium salt electrolyte pre-filled within the one-dimensional channels, the lithium salt electrolyte forming continuous ion channels within the one-dimensional channels; a conductive polymer layer in situ polymerized on the outer surface of the metal-organic framework particles, the conductive polymer layer forming continuous electron channels on the outer surface of the metal-organic framework particles; and a cathode active material mechanically mixed with the metal-organic framework particles; wherein the continuous ion channels and the continuous electron channels are spatially isolated from each other and are continuous, so as to simultaneously provide ion transport paths and electron transport paths within the solid-state cathode. This application's embodiments achieve, for the first time, the continuity and spatial isolation of ion channels and electron channels within a single composite particle, significantly reducing the dual-channel percolation threshold and improving interface compatibility.

This application belongs to the field of semiconductor technology and provides a stepped LDMOS device and its fabrication method. The stepped LDMOS device includes: a semiconductor substrate, a buried oxide region, a drift region, a drain region, a P-type well region, a source region, a P-type base region, a passivation layer, a gate region, a gate extension region, a source electrode, a drain electrode, and a gate electrode. By setting the buried oxide region to be stepped, an electric field peak is generated corresponding to each step structure, thereby forming multiple holes at the corners of the step structure. According to the dielectric field enhancement principle and electric field modulation effect, the electric field of the buried oxide region is increased, thereby effectively increasing the breakdown voltage of the LDMOS device. By setting the gate extension region, a low-resistance electron channel can be formed above the drift region, thereby reducing the on-resistance of the LDMOS device, achieving the purpose of reducing the on-resistance of the device while increasing the breakdown voltage.

The application discloses a catalyst for in-situ degradation of wastewater COD and a preparation method thereof. The four-level synergistic catalytic system of the metal phthalocyanine active matrix, the thiophene conjugated bridging chain, the cyclodextrin functional modification layer and the crosslinked network skeleton has the characteristics of controllable reaction path, designable product structure and high-efficiency catalytic performance. The metal phthalocyanine compound matrix serves as a core active unit, the metal-nitrogen coordination forms a catalytic active center, the thiophene bridging ring structure serves as an electron transfer carrier, a continuous electron channel connecting the phthalocyanine active center and the crosslinked network is constructed through a conjugated system to accelerate electron migration, the cyclodextrin functional modification layer serves as a performance optimization unit, a suitable bridge between the catalyst and the wastewater system is built through host-guest inclusion and hydrophilic modification, and finally the synergistic catalytic system of the active center, the efficient production of active oxygen, the conjugated bridging chain guaranteeing electron transfer and the cyclodextrin optimizing application performance is formed.

The invention relates to preparation of a CoN / CoO-1. 5 heterostructure material derived from a Prussian-blue-like precursor and application of the CoN / CoO-1. 5 heterostructure material in a wide-voltage window supercapacitor, and aims to solve the problems of poor conductivity, low capacity and the like of transition metal oxides (TMOs), Prussian-blue-like Co4 [Co (CN) 6] 3 is used as a precursor, and the CoN / CoO-1. 5 heterostructure material is prepared through a nitridation-oxidation two-step method. And a mesostructure (CoN / CoO-1. 5) which is self-assembled by a CoN / CoO nano unit is constructed. The unique radial valence gradient (Co < 2 + > to Co < 3 + >) of the material synergistically enhances electron conduction and ion adsorption. A nitrogen source provided by cyano in situ in the precursor ensures that a Co-N-O efficient electron channel is formed at a heterogeneous interface, and a built-in electric field from CoN to CoO is formed. The electric field can effectively inhibit oxygen evolution side reaction, so that a working voltage window is remarkably widened. According to the method, while the cubic morphology and high stability of the precursor are maintained, the performance bottleneck of TMOs is successfully overcome, and a new thought is provided for the design of a high-performance supercapacitor electrode material.

This invention discloses a method and system for using ferroelectric lead titanate materials in lithium-mediated ammonia synthesis. The method involves growing an n-type semiconductor buffer layer on the surface of a porous current collector, assembling ferroelectric nanocrystals via electrophoretic deposition and annealing to form an oriented ferroelectric nanoarray layer, and constructing a multi-level heterojunction composite electrode with physical gaps. After high-voltage polarization to align the spontaneous polarization vectors perpendicularly, a nitrogen reduction reaction is driven in an organic electrolyte. This invention utilizes the interfacial Schottky barrier to block the hydrogen evolution side reaction and opens electron channels through the positive piezoelectric effect excited by lithium deposition stress; it utilizes the flexural electric effect induced by deposition morphology to drive proton directional transport along domain walls, and uses the mechanical compressive stress generated by the inverse piezoelectric effect to suppress lithium dendrite growth. This method achieves multi-field coupling control of force, electricity, and chemistry, significantly improving the Faraday efficiency and electrode stability of ammonia synthesis.

The invention discloses rGO-epoxy resin anticorrosive paint with different conductivity and a preparation method thereof, and belongs to the technical field of anticorrosive coating preparation. The conductivity of graphene is reduced by controlling the reduction condition, the electron transmission efficiency can be reduced, so that the activity of a corrosion battery is weakened, after the rGO160 with the conductivity of 1.51 S / cm is added to the epoxy coating, the rGO160 graphene serves as an electron channel, electrons generated by metal corrosion are transmitted to the surface of the coating, and the corrosion resistance of the corrosion battery is improved. The cathode reaction occurs on the surface of the coating and the surface of the non-metal substrate, so that the electrochemical corrosion speed is reduced. By regulating and controlling the conductivity of the reduced graphene oxide, the shielding performance and the corrosion inhibition capability of the reduced graphene oxide can be effectively balanced, so that the optimization of the corrosion resistance of the coating is realized.

This charged particle detector comprises: a microchannel plate having an input surface through which charged particles enter, a multiplication unit that performs electron multiplication on the basis of input of the charged particles while maintaining positional information of the charged particles with respect to the input surface, and an output surface through which electrons multiplied by the multiplication unit are outputted; a resistive anode that, when electrons outputted through the output surface enters therein, outputs a charge signal corresponding to the entering position of the electrons; and an anode that is disposed in a spatial region between the output surface and the resistive anode, has an electron passage unit through which the electrons outputted through the output surface are allowed to pass, and is for collecting the electrons outputted from the resistive anode.

The invention relates to an RC-IGBT device with a collector depletion effect, and belongs to the technical field of semiconductors. In order to reduce the turn-off loss of a traditional RC-LIGBT device and eliminate the negative resistance effect during forward conduction, P polycrystalline silicon is introduced to the anode N + side of the device to serve as a planar gate, a P-Buried region is introduced below an anode N + region, a low-doped N-region is arranged between the planar gate and the P-Buried region, when forward conduction is conducted and the voltage is low, the P polycrystalline silicon gate and the P-Buried region exhaust the low-doped N-region, and the P polycrystalline silicon gate and the P-Buried region exhaust the low-doped N-region. Therefore, a high-resistance electron channel is formed, and the negative resistance effect is eliminated. Meanwhile, during turn-off, the anode voltage is high, the depletion region disappears, and a low-resistance electron channel is formed, so that turn-off is accelerated, and turn-off loss is reduced. According to the invention, the negative resistance effect of the traditional RC-IGBT is eliminated, the reverse conduction capability is realized, the compromise relationship between the conduction voltage drop and the turn-off loss of the LIGBT is optimized, and under the condition of the same conduction voltage drop, the turn-off loss of the device structure is respectively reduced by 52% and 19% compared with that of an SSA-LIGBT and that of the traditional LIGBT.

This invention relates to the field of CO2 reduction catalyst synthesis technology, specifically to a copper terephthalate-based metal-organic framework (MOF) material modified with para-halogens, its preparation method, and its applications. This copper-based MOF material uses 2,5-dichloro / bromo-terephthalic acid as the organic ligand. After dissolving it in an aqueous sodium hydroxide solution, it is mixed with copper nitrate trihydrate in a solvent and stirred thoroughly. The mixture is then transferred to a reactor for hydrothermal reaction. The product is obtained after centrifugation, washing, and drying. The MOFs prepared by this invention exhibit different morphological characteristics, including one-dimensional nanorods and three-dimensional bulk structures. The one-dimensional nanorods possess high specific surface area and axial electron channels, which are beneficial for the exposure of active sites and rapid charge transport. The three-dimensional micro / nano blocks provide excellent mechanical stability and long-term operational durability. Halogen atoms can effectively regulate the electronic structure of the copper active center, enhancing the performance of hydrocarbons and carbon. 2+ Product selectivity.

The invention discloses a K / FeS / g-C3N4 / TiO2 (at) PVDF membrane for photocatalytic oxidation, a preparation method and application, through SO2 and CO2 generated by pyrolysis of K4 [Fe (CN) 6] and K2SO3, gaps are generated in a microstructure of g-C3N4, the specific surface area is higher, adsorption of organic pollutants is enhanced, the reaction rate is increased, a FeS / g-C3N4 / TiO2 heterojunction structure is constructed, and the photocatalytic oxidation performance of the membrane is improved. And carbon defects or nitrogen defects generated by K ionization are introduced into the structure, so that stable electron channel connection and light energy absorption and conversion paths are realized, the light response efficiency is improved, the recombination rate of photo-generated electron holes is reduced, and the free radical yield is improved. The membrane material is applied to a circulating aquaculture water body treatment system, odor substances are degraded through photocatalytic oxidation, and deep purification of water is achieved.

Provided is a semiconductor device provided with a transistor section, the semiconductor device including a drift region of a first conductivity type which is provided in a semiconductor substrate, a plurality of trench portions extending from a front surface of the semiconductor substrate to the drift region, an emitter region of the first conductivity type which has a doping concentration higher than a doping concentration of the drift region and which is provided to extend from a trench portion to an adjacent trench portion among the plurality of trench portions on the front surface of the semiconductor substrate, and a trench bottom portion of a second conductivity type which is provided to a lower end of the trench portion, in which the transistor section has an electron passage region in which the trench bottom portion is not provided in a top view.

This invention relates to the field of semiconductor crystal detection technology, specifically a method for detecting dislocations in gallium nitride (GaN) crystals. The method includes: acquiring a set of original contrast images containing crystal orientation contrast distribution information using an electronic channel contrast imaging device; extracting local phase information of pixels using Hilbert transform and constructing a three-dimensional phase field; calculating the phase gradient to form a topological gradient field; identifying various dislocation feature points and constructing a dislocation line connection network; and filtering key dislocation feature points based on dual thresholds. The feature points are then input into a generative adversarial network (GAN) constrained by topological difference and phase continuity constraints, outputting an enhanced dislocation phase field. An enhanced dislocation image is generated through complex fusion, nonlinear dynamic iterative evolution, and wavelet reconstruction. This method can deeply mine hidden phase features in contrast images, accurately distinguish various dislocation structures in the crystal, and completely preserve subtle dislocation morphological details, achieving refined detection and characterization of dislocations in gallium nitride crystals.

The application belongs to the technical field of vacuum electron devices, and relates to a magnetic focusing system, and particularly provides a miniaturized permanent magnetic focusing system of a cold cathode electron gun, to solve the problems of the oversized size, difficult heat dissipation, complex structure, and difficult processing of a traditional permanent magnetic system and an electromagnetic focusing system under the increasingly miniaturized trend of a terahertz band vacuum electron device. The permanent magnetic focusing system is designed by using a magnetic material, the peak strength of the magnetic field in the electron channel is ensured by a main magnet, the magnetic field strength on the surface of the frustum-shaped cold cathode carrier is enhanced by combining two pole shoes and a guide magnet, and the length of the uniform region of the magnetic field in the electron channel is prolonged, so that a long enough strong magnetic field region is ensured to meet the condition that the electron beam enters the collecting cavity after fully interacting with the high-frequency field. In summary, the application provides the miniaturized permanent magnetic focusing system of the cold cathode electron gun, which has the advantages of compact structure, stable performance, easy assembly, low cost, and the like, and is beneficial to batch processing and manufacturing.

The application relates to a multi-gradient positive electrode and a preparation method thereof, a full-solid-state battery and a preparation method thereof. The multi-gradient positive electrode comprises a current collector, a high-electron-channel layer and a high-ion-channel layer arranged in sequence, the mass proportion of positive electrode active substances in the high-electron-channel layer and the high-ion-channel layer is the same, the mass proportion of a conductive agent in the high-electron-channel layer is higher than that in the high-ion-channel layer, and the mass proportion of a solid-state electrolyte in the high-electron-channel layer is lower than that in the high-ion-channel layer. The application keeps the mass proportion of the positive electrode active substances in the positive electrode, builds the composition gradient of the electrode by changing the content of the conductive agent and the solid-state electrolyte, realizes the optimized distribution of the electrode components, increases the contact between the solid-state electrolyte and the active material, keeps the high energy density, makes the solid battery consider the energy density and the rate performance, and improves the cycle stability and the capacity retention rate of the solid battery.