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49 results about "Electron channel" patented technology

Preparation method of all-solid-state battery, all-solid-state battery and all-solid-state battery module

The invention discloses a preparation method of an all-solid-state battery unit, the all-solid-state battery unit and an all-solid-state battery module. The preparation method comprises the following steps: 1) pressing and pre-calcining a positive electrode unit to form a sintered laminated body; (2) alternately overlapping at least one negative electrode and the sintered laminated body in the step (1) to form an all-solid-state battery laminated body, and pressurizing the laminated body; (3) carrying out low-temperature primary calcination on the all-solid-state battery laminated body in the step (2); (4) carrying out high-temperature secondary calcination on the all-solid-state battery laminated body obtained in the step (3); wherein the positive electrode unit in the step 1 comprises a solid electrolyte layer, a composite electrode layer and a current collector layer; the composite electrode layer comprises a high ion channel layer and a high electron channel layer. The stable particle space is constructed through multiple times of calcination, the interface impedance between the electrode layer and the electrolyte layer and the interface impedance between the electrode layers are reduced, the densification between the solid electrolyte and the electrode is improved, and the battery capacity and the cycle performance are improved.
Owner:SUZHOU QINGTAO NEW ENERGY TECH CO LTD

Method for detecting dislocation of single crystal silicon specimen, method for determining target value of oxygen concentration of single crystal silicon wafer, method for manufacturing single crystal silicon ingot, and method for manufacturing single crystal silicon wafer

To provide a novel method for detecting dislocation that is present in a single crystal silicon specimen after a coating is formed thereto.SOLUTION: A method for detecting dislocation of a single crystal silicon specimen includes a step of detecting a part as dislocation that is observed as a bright line in an electronic channeling image that is acquired by irradiating a surface of a single crystal silicon specimen with an electron beam by a scanning electron microscope, where the irradiation with the electron beam includes a step of irradiating one or more crystal planes of the single crystal silicon specimen with the electron beam in an incidence azimuth within a range of satisfying an electronic channeling condition and the one or more crystal planes include a {220} surface.SELECTED DRAWING: None
Owner:SUMCO CORP

Silver-iron double-atom modified carbon nitride photocatalytic material for synchronously removing organic pollutants and pathogenic bacteria and application of silver-iron double-atom modified carbon nitride photocatalytic material

The invention relates to a silver-iron diatom modified carbon nitride (AgFe-CN) photocatalytic material capable of synchronously removing organic pollutants and pathogenic bacteria as well as a preparation method and application of the silver-iron diatom modified carbon nitride (AgFe-CN) photocatalytic material, and belongs to the field of environmental chemistry and material science. The catalyst is prepared through a supramolecular coordination-thermal polymerization method, wherein silver and iron are highly dispersed on a porous carbon nitride substrate in a monatomic form. The monatomic Ag and Fe synergistically construct an electron channel, and jointly endow the catalyst with excellent photocatalytic activity. The preparation method comprises the following steps: combining the catalyst with peroxymonosulfate (PMS) to construct an AgFe-CN / PMS / Vis photocatalytic Fenton-like synergistic system; in the system, the catalyst can lead generation of an advanced oxidation system which takes singlet oxygen as a main component and cooperates with superoxide free radicals and high-valence iron oxygen species, so that efficient and synchronous removal of various organic pollutants and pathogenic microorganisms in the water body is realized. The catalyst is simple in preparation process and mild in condition, and the constructed water treatment method is high in efficiency, high in universality and good in stability and has wide application prospects.
Owner:JIANGNAN UNIV

Full-static X-ray radiotherapy system and method

The invention relates to the technical field of medical X-ray, radio frequency and high-frequency diagnosis and treatment equipment, in particular to a full-static X-ray radiotherapy system and method. The system is composed of an electron source, an accelerating cavity, a two-dimensional deflector, an annular magnet set, a strip-shaped anode target, a multi-leaf collimator set, a vacuum cavity and the like. The electron beam enters the two-dimensional deflector after being accelerated, and any plane angle is obtained under the pure electromagnetic action; and then the X-rays are guided to the strip-shaped anode target along each electron channel in an annular magnetic field of the annular magnet group to bombard and generate the X-rays. The multi-leaf collimator performs spatial modulation on rays to form an irradiation field matched with a target region, so that multi-angle high-precision radiation irradiation without mechanical rotation is realized. The strip-shaped target surface increases the heat dissipation area and cooperates with an efficient cooling loop, so that the dose rate upper limit is improved, and the FLASH radiotherapy requirement is met. The scheme is compact in structure, low in cost and simple and convenient to maintain, overcomes the defects of large size, low efficiency, limited dosage and the like of traditional rotary radiotherapy equipment, and has wide clinical popularization value.
Owner:SHENZHEN YANGQI MEDICAL CORE INTELLIGENT TECH CO LTD

Power device with composite gate dielectric layer

PCT designated stageWO2026098791A1Gate dielectricDielectric layer
The disclosure relates to a power device (100), comprising: an n-type doped silicon carbide drift layer (103); a p-type doped well (104); an n-type doped source contact (106); an n-type doped substrate (101) acting as a drain contact; and a composite gate dielectric layer (111, 112) comprising a first dielectric layer (111) contributing to a first gate threshold voltage (V1) of the power device and a second dielectric layer (112) contributing to a second gate threshold voltage (V2) of the power device which is occasionally lower than the first gate threshold voltage (V1). The first dielectric layer (111) is overlapping the n-type doped source contact (106) and a first portion of the p-type doped well (104) to enable formation of a first part of a gate electrons channel (107). The second dielectric layer (112) is arranged above the remaining portion of the p-type doped well (104) to enable formation of the remaining part of the gate electrons channel (107) and thus current conduction through the gate electrons channel (107) in case that the second gate threshold voltage (V2) reaches the first gate threshold voltage (V1).
Owner:HUAWEI TECH CO LTD +1

Naphthoquinone-based gas sensitive material, preparation method and application of naphthoquinone-based gas sensitive material in ammonia gas sensor

The invention discloses a naphthoquinone-based gas sensitive material, a preparation method and application of the naphthoquinone-based gas sensitive material in an ammonia gas sensor, and belongs to the technical field of gas sensors. The material is composed of divalent metal ions such as copper, nickel and cobalt and a polysubstituted naphthoquinone organic ligand, forms a one-dimensional chain structure, has a high specific surface area, an ordered electron channel and excellent molecular recognition capability, and can detect toxic gases such as ammonia gas at room temperature with high sensitivity. Macroscopic preparation of the material can be realized through solvothermal one-step reaction. Compared with the prior art, the one-dimensional coordination structure and ligand site engineering synergistically improve the carrier transport and molecular recognition capability, can realize continuous, real-time and selective detection of ammonia gas under complex working conditions, and has the advantages of high yield, large-scale preparation and excellent device application prospect.
Owner:AMERIASIA ACTIVATED CARBON PROD CO LTD

Intelligent charging control method for battery

The invention discloses an intelligent battery charging control method, which relates to the technical field of intelligent battery charging and comprises the following steps of: extracting time continuous characteristics of gradient mutation according to a thermal response dynamic mapping surface, generating an electrochemical polarization direction evolution track and constructing a polarization mutation recognition template; the deviation rate of the electron migration path relative to the ideal conductive path is calculated, and an electron channel correction function is established; the charging current density of the abrupt change area is adjusted in a segmented mode through a correction function, and local potential inversion is weakened through a buffer type current control strategy; and constructing a layered energy distribution mechanism according to a coupling relationship between the polarization direction and the temperature response, and implementing regional control on the charging power. Precise identification and dynamic regulation and control of the polarization direction are realized by constructing a thermal response dynamic mapping surface, local potential inversion and electron aggregation are prevented in advance, energy input and thermal diffusion balance are realized through layered energy distribution and regionalized power control, the charging safety of a battery cell is improved, and the service life of the battery cell is prolonged.
Owner:SHENZHEN BOHAI YUENENG TECH DEV CO LTD

Catalyst for wastewater COD (Chemical Oxygen Demand) in-situ degradation and preparation method thereof

The invention discloses a catalyst for wastewater COD (Chemical Oxygen Demand) in-situ degradation and a preparation method of the catalyst, and belongs to the field of catalysts. A four-stage synergistic catalysis system of a metal phthalocyanine active matrix, a thiophene conjugated bridging chain, a cyclodextrin functional modification layer and a cross-linked network skeleton is adopted; the catalyst has the characteristics of controllable reaction path, designable product structure and efficient catalytic performance, a metal phthalocyanine compound matrix is used as a core active unit, a catalytic active center is formed through metal-nitrogen coordination, and a thienyl bridged ring structure is used as an electron transfer carrier, so that the catalytic activity of the catalyst is improved. A continuous electron channel for connecting a phthalocyanine active center and a cross-linked network is constructed through a conjugated system, electron migration is accelerated, a cyclodextrin functional modification layer serves as a performance optimization unit, and an adaptive bridge of the catalyst and a wastewater system is constructed through subject-object inclusion and hydrophilic modification, so that the performance of the catalyst is improved. Finally, a synergistic catalysis system with active center capable of efficiently generating active oxygen, conjugate bridging capable of guaranteeing electron transfer and cyclodextrin capable of optimizing application performance is formed.
Owner:CHENGDU HAOHONG WATER TREATMENT TECHNOLOGY CO LTD +1

Electrical anisotropy device based on grating type gate voltage structure and preparation method thereof

ActiveCN115207210BHeterojunctionGrating
The application discloses a grating type gate voltage structure-based electrical anisotropy device and a preparation method thereof. A grating type gate voltage electrode structure is arranged on a heterojunction to establish a size-in-situ adjustable electric potential field, form an artificial stripe phase electron channel, and realize in-situ regulation and control of horizontal resistance and vertical resistance of a lower two-dimensional electron gas. Great positive magnetoresistance and negative magnetoresistance effects are realized in two mutually perpendicular directions, and great electrical anisotropy is regulated and controlled. The grating type gate voltage electrode structure is grown on a cross-shaped semiconductor heterojunction, great planar electrical anisotropy in different current directions under a magnetic field can be realized, the size of electrical anisotropy of the device can be in-situ regulated and controlled by changing the size of the gate voltage, and in addition, the method has the advantages of simple micro-processing technology, good universality, large-area batch production and the like.
Owner:NANJING UNIV

Semiconductor device and preparation method thereof

According to the semiconductor device and the preparation method thereof provided by the invention, the barrier layer with the etching selection ratio (generally higher etching selection ratio) is formed in the barrier layer, so that the barrier layer not only has the effect of the barrier layer, but also has the effect of the etching stop layer; the problem that an etching interface between an existing gate material layer and a barrier layer is difficult to control due to the fact that the gate material layer is difficult to etch is solved, an etching interface between a second barrier layer and a barrier layer is changed, etching can be effectively guaranteed to be stopped on the surface of the barrier layer based on the excellent etching selection ratio effect of the barrier layer, and the etching efficiency is improved. The potential barrier layer composed of the barrier layer and the first potential barrier layer is reduced or even prevented from being damaged to influence the performance of an electron channel below the potential barrier layer; and meanwhile, a second barrier layer is additionally arranged below the gate structure, and the concentration of two-dimensional electron gas in the channel can be regulated and controlled by freely designing and adjusting parameters such as material, thickness and doping of the second barrier layer, so that the applicability of the device is widened.
Owner:SILERGY SEMICON TECH (HANGZHOU) CO LTD

Electrode slurry and preparation method thereof, pole piece and supercapacitor

The embodiment of the invention discloses electrode slurry and a preparation method thereof, a pole piece and a supercapacitor, and belongs to the technical field of supercapacitors. The invention provides a preparation method of electrode slurry, and the preparation method comprises the following steps: dispersing an active substance, graphene and a binder in a solvent to obtain a glue solution; and mixing the glue solution with the carbon nanotubes to prepare the electrode slurry. The active substance and the graphene are mixed, the graphene and the active material form surface contact, the interface contact resistance is reduced, meanwhile, the graphene can be connected with a plurality of active substances, and an electron channel is provided for transmission of electrons among different particles; the lamellar structure of the graphene creates a two-dimensional nano channel for the embedding and emigration of ions, and guides the ions to be uniformly distributed on the surface of the active material, thereby improving the dynamic performance. And the obtained glue solution is mixed with the carbon nanotubes, and the carbon nanotubes are connected with different active substances to form a three-dimensional conductive network, so that the high-rate performance is further improved.
Owner:EVE ENERGY CO LTD

Light emitting device

The embodiment of the utility model discloses a light-emitting device, for example, comprising a first epitaxial structure which comprises an N-type GaN layer, a light-emitting layer and a P-type GaN layer which are arranged in sequence; the second epitaxial structure comprises an electron channel layer and a barrier layer which are arranged in sequence; and a connection layer; wherein the connection layer is connected between the first epitaxial structure and the second epitaxial structure, the material of the connection layer comprises GaN, and the thickness of the connection layer is 200 to 800 nanometers. According to the embodiment of the utility model, the GaN connecting layer is arranged to integrate the two epitaxial structures on one light-emitting device, so that the light-emitting device provided by the embodiment of the utility model not only realizes light emitting, but also realizes constant-current light emitting, and can more flexibly solve the problem that the head and the tail of an existing LED lamp head are uneven in light emitting brightness; and the two epitaxial structures are integrated on one light-emitting device, so that the light-emitting device provided by the embodiment of the utility model can be more flexibly applied to a light-emitting device needing constant current.
Owner:BRIDGELUX OPTOELECTRONICS (XIAMEN) CO LTD

Film layer monitoring device and epitaxy equipment

The invention discloses a film layer monitoring device and epitaxy equipment, the film layer monitoring device is used for vapor phase epitaxy equipment, and the film layer monitoring device comprises an electron beam emission mechanism which comprises an electron emission assembly and an electron channel; the electron emitting assembly is used for generating electron beams; an inlet of the electron channel is communicated with an emitting end of the electron emitting assembly, and an outlet of the electron channel is arranged at a position close to the edge of the wafer; electron beams generated by the electron emitting assembly are glanced to the surface of the wafer through the electron channel so as to be diffracted on the surface of the wafer to form diffracted electron beams; a receiving end of the electron beam receiving mechanism is located in the epitaxial chamber; the electron beam receiving mechanism is configured to capture diffracted electron beams and convert the diffracted electron beams into quantizable signals; the electron beam receiving mechanism is further configured to perform in-situ monitoring on the wafer film layer based on the quantizable signal. The crystal quality and the deposition thickness of the film layer can be monitored in situ in the film growth process, and high-quality imaging of electron diffraction signals can be ensured.
Owner:JIANGSU ALPHA-SEMICON EQUIP CO LTD

OECT flexible glucose sensor with vertical structure and preparation method of OECT flexible glucose sensor

The invention relates to the technical field of glucose electrochemical sensors, in particular to an OECT flexible glucose sensor with a vertical structure and a preparation method of the OECT flexible glucose sensor with the vertical structure, the sensor adopts a vertical structure design, a drain electrode, a source electrode and a channel are vertically arranged, the integration level of the sensor is improved, and the size of the sensor is reduced. Meanwhile, the electrochemical performance and the mechanical performance of the PEDOT: PSS material are improved by doping PVA, and the electrochemical performance of the channel layer is improved. Due to the adoption of the vertical structure, the PEDOT: PSS-PVA composite material can form a nano-scale flexible channel layer through a high-speed spin-coating process, so that an electron channel between a drain electrode and a source electrode is effectively shortened, the response speed of the device is remarkably accelerated, the modulation efficiency of channel current is greatly improved, the transconductance of the channel layer is effectively improved, and the performance of the device is improved. And meanwhile, the flexibility of the channel layer is also improved, so that the channel layer still has a relatively good transconductance retention rate under the action of high-cycle stress, and the sensor can be applied to application scenes such as wearable equipment and the like.
Owner:HENAN UNIVERSITY OF TECHNOLOGY

A high-conductivity carbon-coated lithium iron phosphate cathode material and its preparation method

The present invention discloses a high-conductivity carbon-coated lithium iron phosphate cathode material and a preparation method thereof, which relates to the technical field of lithium iron phosphate cathode materials. It includes a spherical lithium iron phosphate matrix, modified lithium niobium vanadate uniformly coated on the outside of the nanoscale spherical lithium iron phosphate matrix, and a composite carbon layer uniformly coated on the outside of the modified lithium niobium vanadate. Among them, the spherical lithium iron phosphate matrix has a smaller specific surface area, which helps to reduce side reactions and can reduce the interfacial impedance. The modified lithium niobium vanadate can improve the electronic conductivity of the cathode material and the diffusion rate of lithium ions. After the organic carbon source in the outermost composite carbon layer is carbonized, it forms a continuous amorphous carbon layer, uniformly coating the particle surface, providing a basic electron channel and suppressing side reactions of the electrolyte. The inorganic carbon source constructs a three-dimensional conductive skeleton, forms a long-range conductive network through the bridging action of nanowires / nanosheets, reduces the interfacial contact resistance, and improves the conductive performance of the cathode material.
Owner:HUNAN YUNENG NEW ENERGY BATTERY MATERIALS CO LTD

Groove loading folded waveguide slow wave structure with vertical electronic channel

The invention belongs to the technical field of microwave electronics and electric vacuum, and particularly relates to a groove loading folded waveguide slow-wave structure with a vertical electronic channel, which comprises a shell, a slow-wave structure is arranged in the shell, and the slow-wave structure is formed by connecting a series of arc bent waveguides and straight waveguides end to end. The waveguide is equivalent to a folded waveguide formed by bending a rectangular waveguide in a U shape; an expanding groove which penetrates through the straight waveguide part and is self-adaptive along with bending deformation is formed in the middle line of the folded waveguide wall, and the expanding groove of the straight waveguide part is communicated with the folded waveguide cavity to form an electron beam channel. According to the invention, the expansion groove and the folded waveguide are conformally arranged, so that the maximum expansion of the size of an electron beam channel is realized, the electron beam with larger size can be borne, and the working power is improved. A coupling impedance analysis result shows that the folded waveguide slow wave structure has higher coupling impedance and can effectively improve gain and output power.
Owner:UNIV OF ELECTRONICS SCI & TECH OF CHINA

Niobium-based negative electrode material and preparation method thereof

The invention provides a niobium-based negative electrode material and a preparation method thereof, and the preparation method comprises the following steps: S1, dissolving and mixing a chromium source, a zinc source, a titanium source, an aluminum source, a niobium source and citric acid to obtain mixed slurry; s2, drying the mixed slurry to obtain dried mixed material powder; and S3, calcining the mixed material powder to obtain the niobium-based negative electrode material. In the preparation process of the niobium-based negative electrode material, various transition metals such as a chromium source, a zinc source, a titanium source and an aluminum source are introduced at the same time, and due to the fact that different transition metal ions have different valence states and electronic structures, the introduction of the various transition metals can provide additional electronic channels and ion diffusion paths, and the performance of the niobium-based negative electrode material is improved. Therefore, the electronic and ionic conductivity of the niobium-based negative electrode material is improved.
Owner:NORTHERN ALTAIR NANOTECH CO LTD +1

Monatomic nickel modified crystalline carbon nitride nanowire array photocatalytic material, preparation method and application thereof

The application discloses a kind of single-atom nickel modified crystalline carbon nitride nanowire array photocatalytic material and preparation method and application thereof, single-atom nickel is uniformly dispersed on crystalline carbon nitride nanowire array.Its preparation method is: crystalline carbon nitride nanowire array is suspended in deionized water to obtain suspension;Nickel nitrate solution is added dropwise to the above suspension, and single-atom nickel modified crystalline carbon nitride nanowire array photocatalytic material is obtained after stirring and annealing.The single-atom nickel modified crystalline carbon nitride nanowire array photocatalytic material of the application has high crystallinity, realizes the minimization of defects in structure, inhibits electron hole recombination, expands the light absorption range, accelerates charge transfer and provides more active sites for catalytic reaction, vertical nanowire array structure has direct one-dimensional electron channel, can realize effective charge transport and shorten charge transport path, thereby improve the photocatalytic activity of catalyst, promote the photocatalytic degradation effect, and can be applied to the degradation of antibiotics in wastewater.
Owner:HUNAN UNIV

Semiconductor device with a Germanium region arranged in a semiconductor substrate

SPAD device with: a silicon substrate (102) with a recess (104) in a top side (102u) of the silicon substrate (102); a p-region (106) which is located in the silicon substrate (102) under a bottom of the recess (104); an n-avalanche region (108) located in the silicon substrate (102) below the p-region (106) and meeting the p-region (106) at a pn junction (110); a germanium region (112) which is arranged in the recess (104) above the pn junction (110); and an intrinsically conductive silicon region (118) located between an upper part of the p-region (106) and a lower part of the germanium region (112), wherein the intrinsically conductive silicon region (118) is configured to act as an electron channel extending over the entire distance between the pn junction (110) and the germanium region (112), wherein the germanium region has the following: an upper germanium region with a first p-doping concentration; and a lower germanium region with a second p-doping concentration, wherein the second p-doping concentration is lower than the first p-doping concentration, and the SPAD device further features the following: a sidewall germanium region that extends continuously along an outer sidewall of the germanium region and traverses the upper germanium region and the lower germanium region.
Owner:TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD

Oxide sintered body, method for producing the same, oxide target, and application thereof

The application discloses an oxide sintered body and a preparation method thereof, an oxide target material and application, and relates to the technical field of semiconductors. By introducing rare earth oxides and a second metal compound into an indium oxide sintered body, the second metal compound being a metal oxide and / or a metal fluoride, on the one hand, a coupling electron channel can be formed with the indium electron orbit of the indium oxide, the characteristics of a thin film made of the sintered body can be improved, and the performance of a device can be improved; on the other hand, the rare earth oxides form small crystal grains embedded in the gaps of the main body material crystal grains, a dense sintered body is formed, and therefore a highly dense ceramic target material can be obtained. The oxide sintered body provided by the application can obtain a sintered body or a target material with high density by optimizing the composition and the preparation method, and is beneficial to making the grain size controllable and the distribution controllable.
Owner:SHENZHEN YONGXING TECHNOLOGY CO LTD

Gel electrolyte with efficient electric field regulation and control as well as preparation method and application of gel electrolyte

The invention discloses a gel electrolyte with efficient electric field regulation and control as well as a preparation method and application thereof, and the preparation method comprises the following steps: step 1, dissolving acrylamide and zinc salt in water, and uniformly stirring to obtain a mixture A; 2, adding an initiator and a cross-linking agent into the mixture A, and uniformly stirring to obtain a mixture B; and 3, uniformly coating a conductive porous membrane with the mixture B, and then carrying out hot pressing treatment to obtain the gel electrolyte with the efficient electric field regulation and control function. The gel electrolyte with excellent coulombic efficiency and rich electron channel density is prepared by taking the conductive porous membrane, the zinc salt and the acrylamide as main materials, and the zinc ion battery can be endowed with excellent electrochemical performance.
Owner:GUIZHOU UNIV

Trace heavy metal conductivity detection method

The invention discloses a trace heavy metal conductivity detection method, and relates to the technical field of heavy metal conductivity detection.The trace heavy metal conductivity detection method comprises the steps that a conduction framework layer and a selective enrichment layer are constructed on an inert substrate in an in-situ mode, and interpenetrating compatibility is conducted at pore channels to form a through interface; the conductive skeleton layer is composed of reduced graphene and a carbon nanotube interpenetrating network, and is provided with in-plane oriented and vertically through electronic channels; the selective enrichment layer is a chelating polymer nano brush which is subjected to post-modification of chelating sites in metal organic framework holes or surface-initiated grafting, and the hole channels are kept communicated and not blocked; comprising the following steps: locking a background conductance baseline, realizing selective enrichment by mild disturbance, reading and synchronizing an environment drift parameter set in the same time window without changing system composition, executing single difference to enable a differential conductance signal to be a unique target indication quantity, and giving a result by combining a material calibration curve. The problem that weak signals in a complex water sample are masked and drifted and are difficult to deduct is solved.
Owner:SHANGHAI RUIYONG WEINING ENTERPRISE MANAGEMENT PARTNERSHIP (LLP)

Multifunctional network solid electrolyte and preparation method and application thereof

The invention discloses a multifunctional network solid electrolyte as well as a preparation method and application thereof. The multifunctional network solid electrolyte is prepared from a modified solid electrolyte material and a functionalized carbon material, and the modified solid electrolyte material and the functionalized carbon material form a three-dimensional interpenetrating network structure with continuous ion and electron channels through chemical bonding. When the multifunctional network solid electrolyte is used as a positive electrode additive to be applied to an electrochemical energy storage device, ions and electrons are conducted, so that collaborative transportation of lithium ions and electrons in a positive electrode material is promoted, and the interface impedance is effectively reduced, thereby improving the rate capability and cycling stability of a battery; in addition, due to the transition metal element doped in the modified solid electrolyte, the solid electrolyte can play a structural function and increase the capacity at the same time, and the energy density of the battery is improved. The composite solid electrolyte can be applied to various electrochemical energy storage devices such as lithium ion batteries, lithium sulfur batteries and solid metal batteries, and finally the comprehensive performance of the batteries is improved.
Owner:DALIAN INSTITUTE OF CHEMICAL PHYSICS CHINESE ACADEMY OF SCIENCES

An LDMOS device with a metal field plate and a manufacturing method thereof

The present application belongs to the field of semiconductor technology and provides an LDMOS device with a metal field plate and a preparation method thereof. The LDMOS device includes: a semiconductor substrate, a buried oxide region, a drift region, a drain region, a P-type well region, a source region, a P-type base region, a passivation layer, a gate region, a gate extension region, multiple metal field plates, a source electrode, a drain electrode, and a gate electrode. By disposing multiple metal field plates at the interface between the buried oxide region and the drift region, each metal field plate generates an electric field spike, thereby forming multiple high electric fields at the bottom of the drift region. This not only improves the longitudinal withstand voltage of the device, but also uses the multiple electric field spikes to increase the surface electric field of the LDMOS device, making the lateral electric field distribution more uniform and improving the lateral withstand voltage. The gate extension region can form a low-resistance electron channel above the drift region, thereby reducing the on-resistance of the LDMOS device, thereby achieving the purpose of reducing the on-resistance of the device on the basis of improving the breakdown voltage of the device.
Owner:SIRIUS CORE SEMICON (CHENGDU) CO LTD

Ion-electron dual continuous conductor cathode composite, solid-state cathode and lithium battery

This application relates to an ion-electron dual continuous conductor cathode composite material, a solid-state cathode, and a lithium battery. The method includes: metal-organic framework particles with regular one-dimensional channels; a lithium salt electrolyte pre-filled within the one-dimensional channels, the lithium salt electrolyte forming continuous ion channels within the one-dimensional channels; a conductive polymer layer in situ polymerized on the outer surface of the metal-organic framework particles, the conductive polymer layer forming continuous electron channels on the outer surface of the metal-organic framework particles; and a cathode active material mechanically mixed with the metal-organic framework particles; wherein the continuous ion channels and the continuous electron channels are spatially isolated from each other and are continuous, so as to simultaneously provide ion transport paths and electron transport paths within the solid-state cathode. This application's embodiments achieve, for the first time, the continuity and spatial isolation of ion channels and electron channels within a single composite particle, significantly reducing the dual-channel percolation threshold and improving interface compatibility.
Owner:VOYAH AUTOMOBILE TECH CO LTD

A stepped LDMOS device and its fabrication method

This application belongs to the field of semiconductor technology and provides a stepped LDMOS device and its fabrication method. The stepped LDMOS device includes: a semiconductor substrate, a buried oxide region, a drift region, a drain region, a P-type well region, a source region, a P-type base region, a passivation layer, a gate region, a gate extension region, a source electrode, a drain electrode, and a gate electrode. By setting the buried oxide region to be stepped, an electric field peak is generated corresponding to each step structure, thereby forming multiple holes at the corners of the step structure. According to the dielectric field enhancement principle and electric field modulation effect, the electric field of the buried oxide region is increased, thereby effectively increasing the breakdown voltage of the LDMOS device. By setting the gate extension region, a low-resistance electron channel can be formed above the drift region, thereby reducing the on-resistance of the LDMOS device, achieving the purpose of reducing the on-resistance of the device while increasing the breakdown voltage.
Owner:SIRIUS CORE SEMICON (CHENGDU) CO LTD

A catalyst for in-situ degradation of wastewater COD and a preparation method thereof

The application discloses a catalyst for in-situ degradation of wastewater COD and a preparation method thereof. The four-level synergistic catalytic system of the metal phthalocyanine active matrix, the thiophene conjugated bridging chain, the cyclodextrin functional modification layer and the crosslinked network skeleton has the characteristics of controllable reaction path, designable product structure and high-efficiency catalytic performance. The metal phthalocyanine compound matrix serves as a core active unit, the metal-nitrogen coordination forms a catalytic active center, the thiophene bridging ring structure serves as an electron transfer carrier, a continuous electron channel connecting the phthalocyanine active center and the crosslinked network is constructed through a conjugated system to accelerate electron migration, the cyclodextrin functional modification layer serves as a performance optimization unit, a suitable bridge between the catalyst and the wastewater system is built through host-guest inclusion and hydrophilic modification, and finally the synergistic catalytic system of the active center, the efficient production of active oxygen, the conjugated bridging chain guaranteeing electron transfer and the cyclodextrin optimizing application performance is formed.
Owner:CHENGDU HAOHONG WATER TREATMENT TECHNOLOGY CO LTD +1

Preparation of CoN / CoO-1. 5 heterostructure material derived from Prussian blue-like precursor and application of CoN / CoO-1. 5 heterostructure material in wide voltage window supercapacitor

The invention relates to preparation of a CoN / CoO-1. 5 heterostructure material derived from a Prussian-blue-like precursor and application of the CoN / CoO-1. 5 heterostructure material in a wide-voltage window supercapacitor, and aims to solve the problems of poor conductivity, low capacity and the like of transition metal oxides (TMOs), Prussian-blue-like Co4 [Co (CN) 6] 3 is used as a precursor, and the CoN / CoO-1. 5 heterostructure material is prepared through a nitridation-oxidation two-step method. And a mesostructure (CoN / CoO-1. 5) which is self-assembled by a CoN / CoO nano unit is constructed. The unique radial valence gradient (Co < 2 + > to Co < 3 + >) of the material synergistically enhances electron conduction and ion adsorption. A nitrogen source provided by cyano in situ in the precursor ensures that a Co-N-O efficient electron channel is formed at a heterogeneous interface, and a built-in electric field from CoN to CoO is formed. The electric field can effectively inhibit oxygen evolution side reaction, so that a working voltage window is remarkably widened. According to the method, while the cubic morphology and high stability of the precursor are maintained, the performance bottleneck of TMOs is successfully overcome, and a new thought is provided for the design of a high-performance supercapacitor electrode material.
Owner:QIQIHAR UNIVERSITY

Positive electrode sheet, solid-state battery containing same, and preparation method

The present invention provides a positive electrode plate, a solid-state battery containing the same, and a preparation method. The positive electrode plate includes a positive electrode current collector, a first coating layer and a second coating layer, wherein the first coating layer is on the surface of the positive electrode current collector, and the materials of the first coating layer include a positive electrode material, a conductive agent, a binder and a gel polymer; the second coating layer is on a surface of the first coating layer away from the positive electrode current collector, and the materials of the second coating layer include a positive electrode material, a conductive agent, a binder and an oxide solid electrolyte. The positive electrode plate of the present application constructs a multilayer electrode, which can increase the lithium ion current density close to the current collector side; the oxide solid electrolyte in the second coating layer can bidirectionally regulate the lithium ion current density and the electron current density. The construction of the ion channel and the electron channel by the first coating layer and the second coating layer containing specific components can significantly improve the electrical performance of the battery. At the same time, the positive electrode plate of the present application can also significantly improve the safety of the battery.
Owner:REPT BATTERO ENERGY CO LTD +1

Fabrication method of terahertz traveling wave tube based on electronic gas injection and orifice expansion technology and terahertz traveling wave tube

ActiveCN119132907BCharged particle masersTravelling-wave tubesElectron injectionAnode voltage
This disclosure provides a method for fabricating a terahertz traveling wave tube based on electron injection vaporization and aperture expansion technology, as well as the terahertz traveling wave tube itself. The fabrication method includes: processing an initial electron channel in a high-frequency interaction component, the diameter of which is smaller than the designed diameter of the electron beam; aligning and welding the high-frequency interaction component with the electron gun; evacuating the terahertz traveling wave tube using a vacuum furnace; turning on the electron gun and accelerating electrons once using the anode; applying a high voltage to the tube body of the high-frequency interaction component to accelerate electrons a second time, the high voltage being greater than the anode voltage; wherein the material around the initial electron channel is vaporized and extracted using the electrons after the second acceleration.
Owner:AEROSPACE INFORMATION RES INST CAS