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Gate drive circuit adapted to high junction temperature environment and its turn-on and turn-off methods

ActiveCN114362729BSmall driving currentInhibition of on-through currentElectronic switchingDriver circuitDriving current
A gate drive circuit adapted to high junction temperature environments, and its turn-on and turn-off methods, are disclosed. The gate drive circuit includes a main three-terminal transistor, a turn-off circuit, and an auxiliary circuit. The added auxiliary circuit generates an auxiliary current signal, either in the same direction or opposite to the control signal current, to the control electrode of the main three-terminal transistor during the turn-on and turn-off processes within a preset time period. This disclosure enables the generation of corresponding positive or negative auxiliary current signals at the control electrode of the three-terminal transistor. During the conduction process, the auxiliary circuit can generate a reverse auxiliary current signal at the control electrode of the three-terminal transistor during the current rise phase, reducing the drive current of the turn-on signal to decrease di. d / dt, suppressing the turn-on current; during the turn-off process, the auxiliary circuit can generate a unidirectional auxiliary current signal at the control electrode of the three-terminal transistor in the current-decreasing segment, increasing the drive current of the turn-off signal and accelerating the turn-off speed.
Owner:BEIHANG UNIV