The invention discloses methods for manufacturing a superjunction structure and a superjunction semiconductor device. A novel semiconductor superjunction and a superjunction device are formed by the key process steps of etching a trench, performing ion implantation at a small inclination angle, filling an insulating dielectric and planarizing, forming an active layer and an electrode and the like. Compared with the prior art, the methods have the advantages that: firstly, a method of forming the superjunction by using a plurality of epitaxy processes and a plurality of implantation processes is prevented from being used; secondly, the bottom of a trench gate can be guaranteed to be flush with or slightly lower than the lower boundary of a body region, so that withstand voltage of the device is improved, and gate-source capacitance and gate-drain capacitance are reduced; thirdly, since the depth of the trench is reduced, the process difficulty of the small-angle implantation is reduced, the process tolerance is increased, and the dielectric in the extended trench is easier to fill and planarize; fourthly, a complex mask is not required, so that the influence of small-angle implantation on a trench region is avoided; and fifthly, the adverse effects of the filling and the planarizing of the extended trench and the manufacturing and the planarizing of the trench gate on the formed body region, body contact region and source region are avoided.