Driving circuit of Cascode type GaN power device

Abstract

The invention relates to a driving circuit of a Cascode type GaN power device. A turn-on loop and a turn-off loop of the GaN driving circuit are separated, and a turn-on acceleration capacitor and a turn-off acceleration capacitor with different capacitance values are adopted in the turn-on loop and the turn-off loop respectively to connect a turn-on gate resistor and a turn-off gate resistor in parallel, so that different dynamic and steady grid currents are provided for the GaN power device, the turn-on and turn-off processes are accelerated, the turn-on and turn-off time is shortened, and meanwhile, the peak and oscillation of voltage and current are reduced; the voltage peak, the current peak, the oscillation, the turn-on time and the turn-off time of the GaN power device in the switching process are reduced, and the requirements for high reliability, small loss and high switching speed of the GaN driving circuit are met. According to the invention, the performance requirement of the GaN power device under a high-frequency condition can be met, high switching speed and low switching loss are ensured, meanwhile, voltage and current peaks and oscillation of the drain and source electrodes in the switching-on and switching-off processes of the GaN power device can be effectively suppressed, and high-reliability work of the GaN power device is ensured.

Description

technical field [0001] The invention belongs to the technical field of power conversion, and relates to a driving circuit of a Cascode type GaN power device. Background technique [0002] In recent years, power devices made of the third-generation wide-bandgap semiconductor material gallium nitride (GaN) have gradually emerged in high-speed and high-power-density power electronics applications. Compared with Si and SiC, GaN power devices have higher switching frequency, smaller on-resistance and smaller gate charge, which means that in high-frequency applications, GaN power devices can achieve higher Integration. [0003] At present, commercialized GaN power devices are mainly lateral heterojunction field effect transistors (HFETs), also known as high electron mobility transistors (HEMTs). GaN HEMTs are depletion-mode devices, that is, they are in the normally-on state. This characteristic brings inconvenience to the shoot-through protection at power-on start-up and contr...

AI Technical Summary

Problems solved by technology

[0005] The research on driving circuits of GaN power devices is mainly focused on the driving circuit design of depletion-mode GaN and enhancement-mode GaN at home and abroad, and there are few studies on Cascode-type GaN driving circuits.

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