The invention discloses a voltage injection type SiC MOSFET active driving circuit. The voltage injection type SiC MOSFET active driving circuit includes a driving push-pull circuit, a driving resistor, a sampling circuit, a pulse generation circuit and a driving voltage compensation circuit, wherein the sampling circuit comprises a first resistor, a second resistor, a third resistor, a fourth resistor, a first capacitor and a second capacitor, the pulse generation circuit comprises a first comparator, a second comparator and a first logic AND gate, and the driving voltage compensation circuitcomprises a fifth resistor, a sixth resistor, a first switch tube, a second switch tube and a first diode. According to the active driving circuit provided by the embodiment of the invention, the sampling circuit detects the driving pulse, so that the pulse generation circuit generates a compensation signal in the drain current drop stage in the SiC MOSFET turn-off process; Through the driving voltage compensation circuit, the gate voltage is compensated to raise the gate voltage and inhibit the change rate of the current so as to inhibit the voltage peak and oscillation at the two ends of the SiC MOSFET.