Trench insulated gate bipolar transistor and preparation method therefor

A bipolar transistor and insulated gate technology, which is applied in the preparation of trench insulated gate bipolar transistors, insulated gate bipolar transistors, and trench insulated gate bipolar transistors, can solve the problem of low cost, thick thickness, etc. problem, to achieve the effect of mentioning withstand voltage, increasing electron diffusion, and enhancing conductance modulation

Inactive Publication Date: 2016-07-20
SHANGHAI Y POWERSEMI ELECTRONICS TECH CO LTD
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Problems solved by technology

The material cost is low and thinning process is...

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  • Trench insulated gate bipolar transistor and preparation method therefor
  • Trench insulated gate bipolar transistor and preparation method therefor
  • Trench insulated gate bipolar transistor and preparation method therefor

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Embodiment 1

[0058] see figure 1 , the present invention discloses a trench insulated gate bipolar transistor, the trench insulated gate bipolar transistor IGBT includes: N-type base region 1, P-type base region 2, N+ buffer layer 3, back P+ emitter Region 4, N+ collector region 5, gate oxide layer 6, polycrystalline gate 7, collector electrode 8, emitter electrode 9, gate electrode 10, P+ type base region 11, carrier storage layer 12, P-type floating layer 13.

[0059] The N-type base region 1, the N+ buffer layer 3, the back P+ emitter region 4, and the collector electrode 8 are sequentially arranged from top to bottom; the upper periphery of the N-type base region 1 is provided with a groove (this embodiment is The annular groove can also be set to other shapes), and the P-type floating layer 13 is arranged in the groove.

[0060] A carrier storage layer 12 and a P-type base region 2 are sequentially arranged in the upper middle part of the N-type base region 1 from bottom to top; a P...

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Abstract

The invention discloses a trench insulated gate bipolar transistor and a preparation method therefor. The trench insulated gate bipolar transistor (IGBT) comprises an N- type base region, a P type base region, an N+ buffer layer, a back P+ emitter region, an N+ collector region, a gate oxide layer, a polycrystal gate, a collector electrode, an emitting electrode, a gate electrode, a P+ type base region, a carrier storage layer, and a P- type floating layer, wherein the N- type base region, the N+ buffer layer, the back P+ emitter region and the collector electrode are arranged from the upper to lower in sequence; a groove body is formed around the upper part of the N- type base region; and the P- type floating layer is arranged in the groove body. According to the trench insulated gate bipolar transistor and the preparation method therefor provided by the invention, the carrier storage layer is introduced to the conventional trench IGBT structure, so that the electron diffusion can be improved, current centralization can be avoided, and electric conductance modulation can be reinforced; and meanwhile, the P- type floating layer is additionally arranged at the lower end of the trench gate, so that a voltage-division effect is achieved, and the withstand voltage of the device is improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and relates to an insulated gate bipolar transistor, in particular to a trench insulated gate bipolar transistor; meanwhile, the invention also relates to a preparation method of the trench insulated gate bipolar transistor. Background technique [0002] With the continuous development of IGBT technology, in order to further optimize the performance of IGBT, its structural design and process technology have also undergone major changes. IGBT, the Chinese name is Insulated Gate Bipolar Transistor, which is a device composed of MOSFET (input stage) and PNP transistor (output stage). It has the characteristics of low drive power and fast switching speed of MOSFET devices (control And response), and bipolar devices have the characteristics of low saturation voltage and large capacity (the power stage is more durable), the frequency characteristics are between MOSFET and power transistors, and ...

Claims

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Application Information

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IPC IPC(8): H01L29/06H01L29/739H01L21/331
CPCH01L29/7397H01L29/0623H01L29/0684H01L29/66348H01L29/7398
Inventor 张杰肖彩华
Owner SHANGHAI Y POWERSEMI ELECTRONICS TECH CO LTD
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