Schottky barrier high current density igbt device

Abstract

The invention discloses a Schottky barrier high-current-density IGBT device comprising a P type base region, a poly silicon gate region, a N- type doped drift region in contact with the bottom surface of the P-type base region, a first device in contact with the bottom surface of the N- type doped drift region, a Schottky barrier region, a N+ type doped source region, an emitter metallic region, and a gate oxide layer. The Schottky barrier region and the N+ type doped source region are in contact with the top surface of the P type base region. The emitter metallic region is in contact with the Schottky barrier region and the N+ type doped source region. The emitter metallic region is arranged between the poly silicon gate region and a group including the N- type doped drift region, the P type base region, the N+ type doped source region, and the emitter metallic region. While advantages of high operating voltage, simple gate voltage control, good switching controllability, a safe operating area, and simple short circuit protection measures are maintained, the Schottky barrier high-current-density IGBT device is greatly increased in current density, improved in conductivity modulation effect and current conduction capability, and decreased in on-state loss.

Description

technical field [0001] The invention relates to the technical field of high-power power semiconductor devices, in particular to a Schottky barrier high current density insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT for short) device. Background technique [0002] High-power power semiconductor switching devices are facing unprecedented opportunities and challenges in strategic industries such as industrial motor energy saving, new energy power generation, power transmission and transformation, power quality, rail transit, metallurgy, chemical industry, new energy vehicles and national defense. An indispensable key technology for a resource-saving and environment-friendly society. The performance requirements for high-power power semiconductor switching devices such as thyristors and insulated gate bipolar transistors (IGBTs) generally include: high voltage (1200 to 10000 volts), high current (150 to 5000 amperes), low conduction and switching powe...

AI Technical Summary

Problems solved by technology

A typical IGBT integrates the conductance modulation effect of a bipolar transistor (Bipolar Junction Transistor, referred to as BJT) and a metal-oxide-semiconductor field-effect transistor (Metal-Oxide-Semiconductor Field-Effect Transistor, referred to as MOSFET) and field-controlled switches. However, the shunt effect of the BJT component causes the conductance modulation effect of the IGBT to be greatly weakened, so that its current density and saturation voltage drop are still far inferior to those of thyristors and IGCTs.

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