The invention discloses a Schottky barrier high-current-density IGBT device comprising a P type base region, a poly silicon gate region, a N- type doped drift region in contact with the bottom surface of the P-type base region, a first device in contact with the bottom surface of the N- type doped drift region, a Schottky barrier region, a N+ type doped source region, an emitter metallic region, and a gate oxide layer. The Schottky barrier region and the N+ type doped source region are in contact with the top surface of the P type base region. The emitter metallic region is in contact with the Schottky barrier region and the N+ type doped source region. The emitter metallic region is arranged between the poly silicon gate region and a group including the N- type doped drift region, the P type base region, the N+ type doped source region, and the emitter metallic region. While advantages of high operating voltage, simple gate voltage control, good switching controllability, a safe operating area, and simple short circuit protection measures are maintained, the Schottky barrier high-current-density IGBT device is greatly increased in current density, improved in conductivity modulation effect and current conduction capability, and decreased in on-state loss.