Semiconductor device and forming method thereof

Abstract

The invention provides a semiconductor device and a forming method thereof. The method comprises the following steps that a semiconductor substrate is provided, wherein the semiconductor substrate comprises a first region and a second region; fin parts are arranged on the first region and the second region of the semiconductor substrate respectively; the fin parts comprise a plurality of first finpart layers and second fin part layers which are stacked in a staggered mode in the normal direction of the surface of the semiconductor substrate, and the second fin part layers are located betweenthe adjacent first fin part layers; a pseudo gate structure which only spans the fin parts of the first region is formed; a dielectric layer is formed on the first region and the second region of thesemiconductor substrate, and the fin parts in the first region and the fin parts in the second region, wherein the dielectric layer covers the side wall of the pseudo gate structure and exposes the top surface of the pseudo gate structure; then the pseudo gate structure and the second fin part layers covered by the pseudo gate structure are removed; then a first through hole and a second through hole which penetrate through the dielectric layer are formed in the dielectric layer in the second region; a first doping layer is formed in the fin parts at the bottom of the first through hole; and asecond doping layer is formed in the fin parts at the bottom of the second through hole. According to the method, the performance of the semiconductor device is improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor device and a forming method thereof. Background technique [0002] MOS transistors are one of the most important components in modern integrated circuits. The basic structure of a MOS transistor includes: a semiconductor substrate; a gate structure located on the surface of the semiconductor substrate; a source region located in the semiconductor substrate on one side of the gate structure; and a drain region located in the semiconductor substrate on the other side of the gate structure. The working principle of the MOS transistor is: by applying a voltage to the gate structure, the current in the channel at the bottom of the gate structure is adjusted to generate a switching signal. [0003] Diode is an important semiconductor device, and diode can be used to form ESD. [0004] Generally, a semiconductor device includes not only MOS transistors but al...

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Problems solved by technology

[0005] However, the performance of semiconductor devices formed by prior art is poor

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