Latch-preventing N type silicon on insulator transverse isolated gate bipolar transistor

Abstract

The invention discloses a latch-preventing N type silicon on insulator transverse isolated gate bipolar transistor which comprises an N type substrate, wherein the N type substrate is provided with buried oxide, the buried oxide is provided with an N type epitaxial layer, and the N type epitaxial layer is internally provided with an N type buffering trap and a P type body region; the N type buffering trap is internally provided with a P type positive region, the P type positive region is provided with an N type negative region and a P type body contact region, and the surface of the N type epitaxial layer is provided with a gate oxide layer and a field oxide layer; and the surfaces of the N type negative region and the P type body contact region are provided with shallow P type trap regions, the surface of the gate oxide layer is provided with a polysilicon gate, and the surfaces of the field oxide layer, the P type body contact region, the N type negative region, the polysilicon gate and the P type positive region are provided with a passivation layer respectively. The transverse isolated gate bipolar transistor is characterized in that the positive inferior of the shallow P type trap region is also provided with a deep P type trap region is arranged under the shallow P type trap region, which shares one photoetching plate together with the shallow P type trap region and is formed by injection of high energy ions; and the deep P type trap region effectively reduces the conduction resistor of a body region, the current capacity of a device is improved, and meanwhile, and the risk of the latch generated in a working process is reduced.

Description

technical field [0001] The invention mainly relates to the field of high-voltage power semiconductor devices, specifically, an N-type silicon-on-insulator lateral insulated gate bipolar transistor with strong anti-latch capability, which is suitable for plasma flat panel display equipment, half-bridge drive circuits and Driver chips in the field of automobile production. Background technique [0002] Today, high voltage integrated circuits are one of the fastest growing power semiconductor industries. In this situation, the Silicon On Insulator (SOI) process technology came out. Its unique insulating buried layer completely isolates the device from the substrate, which greatly reduces the parasitic effect of the silicon device and greatly improves the performance of the silicon device. Device and circuit performance. Silicon-on-insulator lateral insulated gate bipolar transistor (SOI-LIGBT) is a typical device based on SOI technology, which has the advantages of high withs...

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Problems solved by technology

There are many similar methods, and they also have shortcomings under the condition of improving the latch-up problem, such as the decrease of current capability, the significant increase of device area, and the increase of complexity of process version, etc.

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