Latch-preventing N type silicon on insulator transverse isolated gate bipolar transistor
A bipolar transistor, silicon-on-insulator technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of increased device area, decreased current capability, and increased process version complexity, and achieves the risk of latch failure. The effect of reducing, reducing power consumption, and improving current conduction capability
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[0017] Attached below figure 2 , the present invention is described in detail, a kind of anti-latch-up N-type silicon-on-insulator lateral insulated gate bipolar transistor, comprising: N-type substrate 1, buried oxygen 2 is arranged on N-type substrate 1, buried oxygen 2 N-type epitaxial layer 3 is arranged on it, N-type buffer well 4 and P-type body region 16 are arranged inside N-type epitaxial layer 3, P-type anode region 5 is arranged in N-type buffer well 4, P-type body An N-type negative region 15 and a P-type body contact region 14 are arranged in the region 16, and a gate oxide layer 11 and a field oxide layer 8 are arranged on the surface of the N-type epitaxial layer 3, and one end of the gate oxide layer 11 and the end of the field oxide layer 8 The other end of the gate oxide layer 11 extends to the N-type negative region 15 and ends at the N-type negative region 15, and the other end of the field oxide layer 8 extends to the P-type positive region 5 and ends at ...
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