Amorphous silicon film transistor with double grid structure and mfg. method thereof

Abstract

A non-crystalline silicon film transistor with double-grid structure includes a base plate, a first grid, a non-crystalline channel layer, a source a drain and a second grid. The first grid is formed on the base plate, the non-crystalline channel layer is formed on the first grid, the source and drain are formed on the channel layer corresponding to both ends of the first grid and contacted with both ends of the channel layer, the second grid is formed on the source and drain corresponding to the first grid and electrically connected with the first grid, edges of the second grid is overlapped with part of that of the source and drain and the non-crystalline channel is in the first grid.

Description

technical field [0001] The invention relates to a thin film transistor and a manufacturing method thereof, in particular to an amorphous silicon thin film transistor with a double gate structure and a manufacturing method thereof. Background technique [0002] Please refer to figure 1 , which shows a cross-sectional view of a conventional amorphous silicon thin film transistor (a-Si TFT). exist figure 1 Among them, the amorphous silicon thin film transistor 1 is basically an electronic element composed of a gate 50, a source 10, a drain 20 and an amorphous silicon channel layer 30, the gate 50 and the amorphous silicon channel layer 30 They are separated by an insulating layer 40 . The source 10 and the drain 20 are not in contact with each other, but are respectively in contact with the amorphous silicon channel layer 30 through the heavily doped N-type (N+) semiconductor layer 2 . [0003] When a voltage is applied to the gate 50 , the amorphous silicon channel layer 3...

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Problems solved by technology

[0006] However, the current conduction capability of the conventional amorphous silicon thin film transistor 1 is insufficient, and the electron mobility (mobility) of its amorphous silicon channel layer 30 is usually less than 1 cm 2 / V-sec

To apply the amorphous silicon thin film transistor 1 to an active matrix organic light emitting diode (AMOLED) display, compared with the application of a polysilicon thin film transistor (poly-Si TFT) to an AMOLED A larger operating voltage is also required, and it will reduce the reliability of the amorphous silicon thin film transistor 1

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