13results about How to "Improved current distribution" patented technology

The utility model relates to the polycrystal silicon production technical field especially, and it is a kind of novel silicon core structure, silicon core subassembly and reduction furnace structure, the silicon core adopts whole tapering structure or ladder type structure;The whole tapering structure specifically refers to: from the top to bottom of silicon core, the cross section size of silicon core continuously decreases along the axial direction;The ladder type structure specifically refers to: from the top to bottom of silicon core, the silicon core includes first silicon core section and second silicon core section connected in turn, and the cross section size of first silicon core section is greater than the cross section size of second silicon core section. Through the novel silicon core structure, silicon core subassembly and reduction furnace structure, can effectively avoid the abnormality such as molten silicon, black inclusion of silicon core in the growth process.

The application discloses a metal antenna radiation structure and an antenna array, and relates to the technical field of communication. In the main body radiation structure, more than two levels of layered structures are arranged along the height direction, the lateral size of each layer is gradually increased from bottom to top, a stepped expansion amplification structure is formed, gradual transition and impedance smooth change of electromagnetic energy in the vertical direction are realized, effective radiation is realized without loading high-loss dielectric materials, and the problem of efficiency reduction caused by dielectric loss is reduced. The multi-stage metal gradual expansion structure can compress the overall height under the premise of guaranteeing the radiation performance and bandwidth characteristics, optimize the current distribution, enhance the directivity control ability, provide a structural basis for compact arrangement and suppression of grating lobes of the array, and is suitable for low-profile, miniaturization and high-efficiency application scenarios. The technical problems that the radiation efficiency is insufficient and the structural thickness is difficult to be considered under the condition of low profile are solved, and the technical effects that high-efficiency radiation and structural compactness are realized while reducing loss are achieved.

The utility model relates to a single-layer double-frequency GNSS antenna which comprises an antenna medium and a bottom layer metal structure, a high-frequency radiation metal patch is arranged at the center position of the upper surface of the antenna medium, a low-frequency radiation metal patch is arranged on the upper surface of the antenna medium, fan-shaped metal radiation patches are arranged at the four corners of the antenna medium, and the fan-shaped metal radiation patches are arranged on the bottom layer metal structure. An arc-shaped isolation seam is arranged between the fan-shaped metal radiation patch and the low-frequency radiation metal patch; metal through hole structures are arranged on the high-frequency radiation metal patch, the low-frequency radiation metal patch and the fan-shaped metal radiation patch, and feeding points are arranged on the high-frequency radiation metal patch and the low-frequency radiation metal patch. The utility model belongs to the technical field of antennas, a high-frequency radiation metal patch and a low-frequency radiation metal patch are arranged on an antenna medium and are isolated through a non-metal gap, a double-frequency function is obtained, the size of the antenna is effectively reduced, complexity of a traditional multi-layer structure is avoided through a single-layer integrated design, and miniaturization application is facilitated.

The invention relates to the technical field of lithium battery materials, in particular to a gradient hole composite current collector with an integrally-formed tab and a preparation method thereof.The gradient hole composite current collector with the integrally-formed tab comprises a base film, and the base film is sequentially provided with a tab area, a first area and a second area in the width direction of the base film; the first area and the second area are respectively provided with a plurality of holes penetrating through the base film in the thickness direction, the density of the holes in the first area is greater than that of the holes in the second area, the side surface of the base film is sequentially provided with a bottom layer and a metal layer, and the bottom layer and the metal layer extend out of the base film from one side of the tab area of the base film. In the technical scheme provided by the invention, the bottom layer and the metal layer cover the tab area and the part extending out of the base film is used as the tab, and the tab and the current collector main body are the same continuous metal body, so that perfect metallurgical bonding is realized, the contact resistance tends to zero, and all failure risks caused by welding or gluing are thoroughly eliminated.

This invention relates to a multi-resonant, multi-step-down ratio switched-capacitor converter, belonging to the field of power electronics technology. The invention addresses the technical problem of existing switched-capacitor converters struggling to achieve multiple fixed step-down ratios while maintaining high efficiency and high power density within the same topology. The invention includes: an input port; a switching network composed of fourteen MOSFET switches; a capacitor network composed of five flying capacitors; and first and second resonant inductors connected between the switching network and the output side. The converter is a single-stage topology, with the above components forming a single resonant network. By adjusting the switching timing, three fixed step-down ratios—8:1, 4:1, and 2:1—can be achieved within the same topology. The converter operates in open-loop mode, with the switching frequency matching the resonant frequency, achieving zero-current switching for all switches. The two-phase circuits on the output side operate in a staggered 180° manner to reduce current stress. The output side also includes first and second output ports connected in parallel, along with an output filter capacitor, which, after filtering, jointly supply power to the load.

The invention relates to the technical field of alloy pole plates, in particular to an aluminum-magnesium-silicon alloy pole plate with multiple layers of carbon-based coatings and a preparation method thereof.The aluminum-magnesium-silicon alloy pole plate with the multiple layers of carbon-based coatings comprises an aluminum-magnesium-silicon alloy base material layer, and the multiple layers of carbon-based coatings are connected to the surface of the aluminum-magnesium-silicon alloy base material layer; the multi-layer carbon-based coating comprises a CrN layer, a CrNC layer, a CrC layer and an amorphous carbon coating doped with metal atoms and nitrogen atoms which are sequentially arranged in a stacked mode, and the CrN layer is located on the side close to the aluminum-magnesium-silicon alloy base material layer. The bonding force between the multi-layer carbon-based coating and the Al-Mg-Si alloy base material layer of the aluminum-magnesium-silicon alloy pole plate with the multi-layer carbon-based coating is relatively strong, and the aluminum-magnesium-silicon alloy pole plate with the multi-layer carbon-based coating has relatively good conductivity and corrosion resistance, so that the problem that the bonding force, the corrosion resistance and the interface conductivity between the existing coating and the Al-Mg-Si alloy pole plate are difficult to improve at the same time is solved.

This invention provides a diode structure, comprising: a substrate; multiple filling trenches disposed on the substrate, extending along the length or width direction of the substrate and spaced apart along the length or width direction of the substrate; an epitaxial filling layer disposed within each filling trench; a first metal layer connected to at least one epitaxial filling layer within the multiple filling trenches to form a first ohmic contact; and a second metal layer disposed on the substrate and forming a Schottky contact with the substrate. This application solves the problem of low high-voltage withstand capability in existing SiC diodes.

The invention discloses a metal antenna radiation structure and an antenna array, and relates to the technical field of communication, and the metal antenna radiation structure is characterized in that more than two stages of layered structures are arranged in a main body radiation structure along the height direction, so that the transverse size of each layer is gradually increased from bottom to top, and a stepped expansion amplification structure is formed; progressive transition and impedance smooth conversion of electromagnetic energy in the vertical direction are achieved, effective radiation is achieved under the condition that a high-loss dielectric material does not need to be loaded, and the problem of efficiency reduction caused by dielectric loss is solved. The multi-stage metal diverging structure can compress the overall height, optimize the current distribution and enhance the directivity control capability on the premise of ensuring the radiation performance and the bandwidth characteristic, provides a structural basis for compact array arrangement and grating lobe suppression, and is suitable for low-profile, miniaturized and high-efficiency application scenes. The technical problem that the radiation efficiency is insufficient and the structure thickness is difficult to consider at the same time under the low profile condition is solved, and the technical effects of high-efficiency radiation and compact structure are achieved while the loss is reduced.

This application relates to the technical field of electronic filtering, and in particular to a miniaturized ceramic dielectric filter capable of handling high power. The filter includes a ceramic cover plate, a cavity, an insulating kit, an inner conductor sheet, and a connector. The ceramic cover plate is silver-plated and sealed to the top of the cavity. Each side of the cavity has an interface penetrating the side wall. Two insulating kits are located inside the cavity, each corresponding to one of the interfaces. The inner conductor sheet is housed within the insulating kit. The connector passes through the interface, and its end connects to the inner conductor sheet. This application improves transmission efficiency, reduces losses, lowers heat dissipation, and extends product lifespan. The insulating dielectric completely encapsulates the inner conductor, effectively increasing the filter's power output. Compared to conventional ceramic dielectric filters ranging from a few watts to tens of watts, this filter can handle high-current, high-frequency signals, thus broadening its application scope.

The application discloses a kind of double-beam microstrip antennas, including first substrate layer and second substrate layer, first substrate layer is equipped with SIW waveguide structure, second substrate layer is located above first substrate layer;The top surface of second substrate layer is provided with microstrip antenna, SIW waveguide structure is equipped with coupling gap, microstrip antenna includes central axis part, the two sides of central axis part have symmetrically arranged rectangular part, the length direction of rectangular part is consistent with the length direction of central axis part, the upper end of central axis part is protruding relative to the upper end of rectangular part, the lower end of central axis part is protruding relative to the lower end of rectangular part, the middle area of the side of rectangular part away from central axis part is provided with notch, the two corner parts of the side of rectangular part away from central axis part are respectively provided with separation gap, separation gap makes corresponding corner part and other areas of rectangular part separate.This microstrip antenna can realize double-beam, can excite TM02 mode, and frequency band width is relatively wide, can cover N257 and N261 operating frequency, especially suitable for 5G communication system.

The application discloses a bus multi-material resistance welding process and a gradient current-distribution electrode structure and belongs to the technical field of resistance welding.The application integrates an electrode quick-change mechanism in a single welding station, can automatically switch a chromium-zirconium-copper inlaid tungsten-copper electrode and a graphite electrode, respectively completes two types of welding procedures of copper braided wire-copper plate and copper plate-L-shaped copper bent plate, adopts a gradient current-distribution electrode with a waist-shaped through groove on a working surface in a matched mode, realizes uniform distribution of current in a large-area welding area with a size of 21*15 mm or above, simultaneously constructs a full-process automatic production line of "welding-air knife cleaning-CCD visual detection-automatic sorting", and effectively solves problems of uneven welding current of large-area copper workpieces, low electrode change efficiency, easy interference of detection by cooling water and the like, electrode switching time is less than or equal to 5 s, the welding point drawing force is stable, the bus welding full-process unmanned operation can be realized, and production efficiency and product consistency are greatly improved.

The invention discloses a power semiconductor device soft turn-off driving device and method. The device comprises a signal processing module, a power amplification module and a power semiconductor device. The signal processing module outputs a corresponding signal according to an input on-off signal and a circuit fault signal, and performs power amplification through the power amplification module so as to drive the power semiconductor device to work correspondingly; when the circuit fault signal is no fault, if the switch-on and switch-off signal is a switch-on signal, a signal for charging the power semiconductor device is output; if the turn-on and turn-off signal is a turn-off signal, outputting a signal for discharging the power semiconductor device in a fast turn-off mode and a slow turn-off mode at the same time; and when the circuit fault signal is a fault, outputting a signal for discharging the power semiconductor device in a slow turn-off form. According to the invention, the utilization efficiency of the circuit can be improved, current distribution is facilitated, devices with lower current capability are selected, and the cost is reduced; as no additional timing circuit is needed, the circuit structure is simplified.

This invention discloses an application and equipment for hydrogen production via water electrolysis using a sheet-like molybdenum carbide catalyst, relating to the field of chemical technology. The equipment includes an electrolyzer with two electrode plates inserted inside. Each electrode plate has several diamond-shaped protrusions evenly distributed on its surface. The two electrode plates are positioned opposite each other as a cathode and anode. Multiple layers of mesh are arranged inside the electrolyzer near the two electrode plates. Through these structural optimizations, the current distribution and ion conduction paths are optimized, significantly improving the overall reaction efficiency and energy conversion rate for hydrogen production via electrolysis. This reduces the stress on the electrolyzer end plates and sealing structure, enhances the structural stability, sealing reliability, and durability of the equipment under long-term high-pressure operation, reduces maintenance requirements, significantly shortens equipment downtime for maintenance, lowers operating costs, and simultaneously ensures precision and airtightness after each assembly.