99results about How to "Improved current distribution" patented technology

The invention discloses a wear-resistant workpiece and a manufacturing method of a wear-resistant coating thereof. The preparation method of the wear-resistant coating comprises the following steps: forming a preparation piece according to the structure of a required wear-resistant workpiece; coating nickel on the surface of the preparation piece through a double-pulse method, thus forming a nickel-coated transition piece; and coating a hard chromium layer on the surface of the nickel-coated transition piece, thus forming the wear-resistant coating on the surface of the preparation piece. For the manufacturing method of the wear-resistant workpiece, a step of coating nickel on the surface of the workpiece through a double-pulse nickel coating method is added; and the double-pulse nickel coating method is characterized in that the magnitude of current or voltage is regulated by an external control means, the current is additionally controlled by controlling the pulse switch-on time, the pulse switch-off time, the pulse duty factor, the pulse current density and the like, and corresponding variables are changed to respectively achieve the effects of increasing the cathode current density, inhibiting the generation of side reaction, reducing the impurity content in the coating, improving the current distribution and the like, thus improving the quality of the coated nickel layer and prolonging the service life of the wear-resistant workpiece.

The invention relates to a high gain broadband dielectric lens Vivaldi antenna. The array antenna comprises a substrate, a radiation slot, a dielectric lens and a Chebychev tapered strip line feeder. According to the high gain broadband dielectric lens Vivaldi antenna, through changing the structural size of the dielectric lens, the fluctuation of antenna radiation impedance can be effectively improved so as to obtain better impedance matching, the transmission speed of an electromagnetic wave in the slot can be reduced according to the high dielectric constant of the lens, the current distribution on an antenna aperture is improved, thus a spherical wave is a nearly a plane wave, the antenna radiation efficiency is raised, and a higher antenna gain is obtained. According to a Chebychev tapered strip line, the impedance matching of the antenna can be improved further, and the working band is broadened. The array antenna in the invention has the characteristics of high gain and broad band and is suitable for a radiation unit of wideband array antennas of the field of mobile communication and a military radar.

The present invention provides a winding lithium paste battery. The winding lithium paste battery has a battery cell formed by winding of a positive plate and a negative plate, the electrode active conductive material layer of the electrode piece comprises non-bonded and fixed electrode active conductive particles. The winding lithium paste battery further comprises a leakage preventing portion, the leakage preventing portion is arranged at the edge of the positive plate and/or the negative plate or arranged on a housing to prevent the positive pole active conductive particles in the positivepole active conductive material layer from being leaked from the positive plate and/or prevent the negative pole active conductive particles in the negative pole active conductive material layer frombeing leaked from the negative plate. The winding lithium paste battery is more compact in structure, can regulate the shape for the application occasions, and is convenient and flexible in application. Besides, the winding lithium paste battery employs the uniformly distributed multi-tab group or full-tab design to effectively improve the current conduction capacity, improve the current distribution and improve the utilization rate of the electrode active conductive materials.

A light emitter includes a first mirror that is an epitaxially grown metal mirror, a second mirror, and an active region that is epitaxially grown such that the active region is positioned at or close to, at least, one antinode between the first mirror and the second mirror.

The invention discloses a circular polarized antenna with omnidirectional broad axial ratio beam width. The circular polarized antenna comprises a parasitic element, an upper-layer medium baseplate, an exciting element, a middle-layer medium baseplate, an earthing unit, a lower-layer medium baseplate and a 3dB mixed electric bridge electric feeding network, wherein the parasitic element and the exciting element are respectively arranged on the upper surfaces of the upper-layer medium baseplate and the middle-layer medium baseplate; the upper-layer medium baseplate and the middle-layer medium baseplate are separated by an air layer; the 3dB mixed electric bridge electric feeding network is placed on the lower surface of the lower-layer medium baseplate; an internal conductor of a coaxial electric feeding unit is connected with an input port of the 3dB electric bridge electric feeding network; and an external conductor of the coaxial electric feeding unit penetrates through the lower-layer medium baseplate and is connected with the earthing unit. According to the invention, not only is the circular polarized radiation realized very well, at the same time, the circular polarized antenna has broader axial ratio beam width within the omnidirectional range, is small in volume, is low in section plane, is light in weight, is simple in structure, and is easy to be conformal.

The invention discloses electrolytic tinning liquid, which comprises the following raw material components: (A) stannous salt of which the stannous tin ion concentration is 1-100g/L, (B) acid of which the total concentration is 10-200g/L, (C) a surfactant selected from one or more of nonionic surfactants of which the structural formula are as follows: R1COO(C2H4O)nH and R2S(C2H4O)mH, being 1-20g/L in the total concentration, (D) a current dispersing agent which is selected from an unsaturated bond-containing dicarboxylic acid derivative or a salt thereof and is 0.01-2g/L in concentration, (E) conducting salt of which the concentration is 2-10g/L, and (F) a pH regulating agent for regulating the pH value of the electrolytic tinning liquid to 2.0-4.0. By adopting the electrolytic tinning liquid, the current distribution among steel balls, electronic elements and conducting balls in an electrolytic tinning drum can be optimized, the steel balls and the electronic elements are prevented from being bonded on the conducting balls by means of electroplating, and the quality of electrolytic tinning products is improved.

A communication device including a supporting plate and an antenna system is provided. The supporting plate includes a conductive plate and a non-conductive plate. The conductive plate has a first edge and a second edge. The antenna system includes at least two antennas, which are both disposed at the first edge of the conductive plate and operate in at least a first band. A distance between the first edge and the second edge of the conductive plate is about 0.25 wavelength of the lowest frequency in the first band, and the distance is smaller than a length of the first edge.

The invention discloses a P electrode structure of an LED chip, an LED chip structure and a manufacturing method therefor. The P electrode is formed by multiple layers of metals, wherein Al is at the lowest layer; the LED chip structure comprises a substrate, an N type layer, an active layer, P type layer, an ITO transparent conductive layer, a P electrode and an N electrode; the N type layer, the active layer and the P type layer are formed on the substrate in sequence; the N type layer is connected with the N electrode; the ITO transparent conductive layer is formed on the P type layer; the P electrode is formed on the ITO transparent conductive layer, wherein the metal Al is arranged on the lowest layer of the P electrode; and Al is heated and permeated to the ITO transparent conductive layer, so that schottky contact is formed between the ITO transparent conductive layer and the P type layer. According to the P electrode structure of the LED chip, the LED chip structure and the manufacturing method therefor, the luminous reflectance of the electrode is improved; the luminance of the LED chip is improved; and the manufacturing process for the LED chip is simpler.

A blue/ green LED chip of gallium nitride base in high brightness and high voltage type is prepared as utilizing sapphire as substrate and growing multiple layer of GaInN / AIGaN / GaN quantum well structure, covering transparent conductive layer and P and N electrode on stage by utilizing electronic beam evaporation method, applying a photo etching technique to prepare a special horizontal structure of P electrode and N electrode.

The invention discloses a semiconductor light-emitting diode chip and relates to the technical field of light-emitting diode production. Corresponding graphical current expanding layers are arranged below an N welding disc and a P welding disc respectively, electronic recombination luminescence exists in all light-emitting recombination regions, the area of the light-emitting recombination regions is increased on the basis of the prior art, and chip current distribution and light-emitting luminance can be effectively improved; meanwhile, graphical current expansion can effectively increase surface adhesion force of the welding discs, and reliability of the chip can be improved.

The invention discloses a communication apparatus. The apparatus comprises a support plate and an antenna system. The support plate comprises a current-conducting plate and a non-current-conducting plate. The current-conducting plate possesses a first edge and a second edge. The antenna system is located on the first edge of the current-conducting plate. The antenna system at least comprises a first antenna and a second antenna. The first antenna and the second antenna are operated in at least one first frequency band. A distance of the first edge and the second edge of the current-conducting plate is close to 0.25 times of a wavelength of a minimum frequency of the first frequency band and the distance is less than a length of the first edge. The antennas of the invention can reach good isolation without an isolation element and antenna efficiency basically maintains the same.

The invention was involved in one slab lattice material with corrosion resistance and fine deeprecycle. The alloy consist of 0.06%-0.08%, 0.30%-1.50% Sn, 0.02%-0.04% Al,0.01%-0.04% Cu, 0.008%-0.05% Ag and little of Pb. The alloy had enough mechanical strength, namely enough setting rate, fine corrosion resistance, deep discharge and good recycling performance. It was suitable to develop the late model green power battery with exempt maintenance performance. It was with high energy, deep charge and discharge recycling, large electric current discharge and ultrathin type.

The invention discloses a large-power high-brightness light-emitting diode (LED) chip and a production method thereof. The large-power high-brightness LED chip comprises a metal substrate. An LED epitaxial wafer into which a photonic quasi-crystal structure is embedded is arranged above the metal substrate. Passivating protection layers are arranged on the two sides of the epitaxial wafer. A metal bonding layer, a metal reflecting layer, a current expansion and P-type ohmic contact layer, a P-type semiconductor layer, a light emitting layer, an N-type semiconductor layer into which the photonic quasi-crystal structure is embedded, and an N-type ohmic contact electrode are sequentially arranged on the epitaxial wafer from the bottom to the top. The passivating protection layers are arranged on the two sides of the epitaxial layer above the metal substrate. The invention additionally discloses a production method for the chip. The invention solves the problems of low-efficiency light extraction and ineffective heat dissipation of the LED chip at the same time, overcomes the defects of a surface photonic crystal LED structure, and provides an effective solution to the development of large-power high-brightness LEDs.

The invention discloses a double-layer butterfly antenna and belongs to the field of local discharge UHF detection technologies. The double-layer butterfly antenna comprises a dielectric substrate, afirst butterfly patch arranged on the upper surface of the dielectric substrate and a second butterfly patch arranged on the lower surface of the dielectric substrate, wherein a first microstrip lineconnected with the first butterfly patch is arranged in the middle of the upper surface of the dielectric substrate, a second microstrip line is arranged in the middle of the lower surface of the dielectric substrate, the two ends of the second microstrip line are connected with the second butterfly patch and the first microstrip line respectively, the first microstrip line and the second microstrip line are etched on the upper surface of the dielectric substrate and the lower surface of the dielectric substrate respectively, the two ends of the first butterfly patch are provided with notchesrespectively, and the two ends of the second butterfly patch are provided with notches respectively. Through the double-layer butterfly antenna, on the premise of guaranteeing antenna miniaturization,more electromagnetic wave signals can be received, and the detection sensitivity and anti-interference capability of a UHF detection system are improved.

The invention provides a megasonic electroplating device for improving metal microelectroforming uniformity and a method. Bi-directional alternate megasonic waves are coupled in the electroplating process. The device comprises a megasonic plating tank, and the megasonic plating tank comprises piezoelectric ceramic groups, an electroplating tank, a waterproof tank and a water bath; the electroplating tank is fixed in the waterproof tank by sticking to the wall; the waterproof tank is positioned in the water bath and is fixed to the water bath through an upper cover plate which is integral withthe waterproof tank; the piezoelectric ceramic groups are pasted outside the two side walls of the electroplating tank; the electroplating tank is made from a quartz material; the wall thickness of the electroplating tank is the half-wave length of utilized megasonic frequency in quartz; and megasonic signals are introduced into the piezoelectric ceramic groups, and time control of bi-directionalmegasonic vibration is achieved. The method for improving metal microelectroforming uniformity of the megasonic electroplating device comprises the steps that a photoresist microstructure is manufactured on a substrate, and glue film imaging is achieved; and bi-directional alternate megasonic wave irradiation is applied during the electroplating process. According to the megasonic electroplating device and the method, operation is easy and feasible, and uniformity of a plating during the metal microelectroforming process can be effectively improved.

The invention provides a lead-acid battery grid structure which comprises an outer frame and internal ribs. The internal ribs are thin and dense, and thickness or diameter of the internal ribs is less than or equal to 1/2 of thickness of the outer frame but greater than or equal to 1.2 mm. spacing between each two adjacent internal ribs is 5-15 mm. Thick ribs which have consistent thickness with the outer frame are arranged at the inner part of the outer frame. The lead-acid battery grid structure is used for making a battery plate. During pasting, the pasting thickness is easy to control and consistency is good. Contact area between the ribs and lead paste is large so as to improve current distribution. The distance between the lead paste and the ribs is near. Capacity loss caused by softening of the lead paste is alleviated. Thus, battery performance is enhanced and service life of a battery is prolonged.

The invention belongs to the technical field of electromagnetic fields and microwaves, and particularly relates to a method for expanding the lower limit of a working frequency band of a coplanar Vivaldi antenna. A closed groove similar to a radiation patch in shape is formed in a traditional coplanar Vivaldi antenna metal radiation patch, a curve radiation arm is constructed, two metal radiation patches with gradually changing indexes are equivalently constructed, and current distribution is improved; the first curve radiation arm 12, the first linear radiation arm 13 and the second linear radiation arm 14 form an upper side loop radiation structure, and the second curve radiation arm 22, the third linear radiation arm 23 and the fourth linear radiation arm 24 form a lower side loop radiation structure, so that the effective length of a current propagation path on the surface of the antenna is effectively prolonged, and the low-frequency radiation capability of the antenna is enhanced; and meanwhile, parallel slot lines are arranged on the first linear radiation arm 13 and the third linear radiation arm 23, and resistance loading is carried out, so that impedance matching is facilitated, antenna reflection is reduced, part of low-frequency components are absorbed to the greatest extent, and then the lower limit of the working frequency band of the antenna is further remarkably expanded.

The invention provides an HEV soft package battery cell and a battery pack, the HEV soft package battery cell comprises a battery cell main body and a battery cell tab, the battery cell main body is provided with an aluminum-plastic film shell, and a pole group and an electrolyte which are sealed in the aluminum-plastic film shell, the battery cell tab is provided with a positive pole tab and a negative pole tab, one ends of the positive pole tab and the negative pole tab are positioned in the aluminum-plastic film shell and are connected with pole group, and other ends of the positive pole tab and the negative pole tab extend out of the aluminum-plastic film shell. The battery cell is characterized in that the battery cell main body is of a cuboid structure, the length L of the battery cell main body is smaller than or equal to 250 mm, the width W and the thickness H of the battery cell main body meet the conditions that 20%L <= W <= 60%, and 1%L <= H <= 5%L. According to the HEV softpackage battery cell, the high-rate charging and discharging capacity of the battery cell can be guaranteed, the power performance of the battery cell is guaranteed, the safety performance of the battery cell can also be improved, and the HEV soft package battery cell has good practicability.

The invention relates to a manufacturing method of an AlGaInP light-emitting diode, which comprises the following steps: completing the steps of performing epitaxial growth on an AlGaInP light-emitting diode chip and manufacturing an electrode, then increasing one-time sideetching for a chip substrate after half-cutting of the chip and before packaging, and changing the flow direction of current; optimizing the current distribution; and reducing the light absorption of the substrate and improving the light extraction efficiency of the light-emitting diode. By adopting the manufacturing method, the light intensity of the chip can be improved by about 3%-15%.

The invention provides a semiconductor light emitting device and a manufacturing method thereof. The semiconductor light emitting device comprises a second electrode, a first semiconductor layer of a first doped type, an active layer, a second semiconductor layer of a second doped type, a first degenerate semiconductor layer of a first doped type, a second degenerate semiconductor layer of a second doped type, and a first electrode electrically connected with the second degenerate semiconductor layer, wherein the first semiconductor layer of the first doped type is electrically connected with the second electrode; the active layer is formed on the first semiconductor layer; the second semiconductor layer of the second doped type is formed on the active layer; the first degenerate semiconductor layer of the first doped type is formed on the second semiconductor layer; and the second degenerate semiconductor layer of the second doped type is formed on the first degenerate semiconductor layer. According to the invention, a positively biased tunneling pn junction is inserted into the semiconductor light emitting device, thus the current distribution uniformity of a power type semiconductor light emitting device is greatly improved, and the current crowing effect is solved.

The invention discloses an aluminum electrolytic tank composite cathode structure containing a highly conductive skeleton network. Since cathode current collector skeletons are pre-installed inside the cathode, cathode current collector skeletons with different shapes are pre-arranged in a cathode carbon block, so that the cathode structure can redistribute the distribution and the size of the level current in aluminum liquid, and the mechanical properties of the cathode can be improved and the service life of the cathode is improved. By virtue of the cathode, according to structural parameters and types of the materials determined by the actual groove design, the horizontal current density of the aluminum liquid along the long axis and short axis of the electrolytic tank can be significantly reduced and thus the vertical amplitude of fluctuation of the aluminum liquid-electrolyte interface is weakened and the proper melt horizontal movement is maintained, the electrolytic tank can run smoothly in a low polar distance, the energy conservation and consumption reduction are realized, and the processing of the structure is relatively simple and easily implemented.