34results about How to "Improved current distribution" patented technology

The invention relates to the technical field of integrated circuits, and discloses a preparation method of a high-purity copper sulfate basic electroplating solution for an integrated circuit, which comprises the following steps: step 1, preparing an electrolytic bath; step 2, preparing materials including high-purity copper sulfate, high-purity sulfuric acid, ammonia water, high-purity deionized water, polyvinylpyrrolidone, stannous chloride, benzimidazole compounds, sodium alkyl benzene sulfonate and nano aluminum oxide; 3, stirring and mixing high-purity deionized water and high-purity copper sulfate to form a solution; 4, adding high-purity sulfuric acid into the solution in the step 3, and stirring for dissolving; 5, adding ammonia water into the solution in the step 4 to adjust the pH value; 6, polyvinylpyrrolidone, stannous chloride, benzimidazole compounds, sodium alkyl benzene sulfonate and nanometer aluminum oxide are sequentially added according to the sequence, and the materials are stirred and mixed to be uniform; 7, the mixed electroplating liquid is filtered; and 8, storing the filtered electroplating liquid.

The invention relates to the technical field of antennas, and discloses a double-blade radiation patch which is in a flat shape with a narrow middle part and two wide ends. The invention further discloses a fractal feed double-leaf antenna, a reflecting plate, a first micro-strip plate, a fractal feed structure, a second micro-strip plate, a coupling structure with a coupling gap, a third micro-strip plate and the double-leaf radiation patch are sequentially arranged from one end of the antenna to the other end of the antenna, and in the direction perpendicular to the reflecting plate, the fractal feed structure is arranged on the first micro-strip plate, and the fractal feed structure is arranged on the second micro-strip plate. The fractal feed structure and the coupling slot are arranged in a coupling manner, and the double-leaf radiation patch is correspondingly arranged right above the coupling slot. The antenna adopts a fractal structure for feeding, a single feed point introduces a double-branch structure and is respectively coupled to two slots, and meanwhile, a secondary matching branch is introduced, so that the current distribution is effectively improved, and the impedance matching is further improved. The unit spacing in the form can be one time of wavelength of high frequency, and a large-spacing antenna under the condition of a single feed point is successfully realized.

A single-phase bidirectional unit cascaded hybrid two-level rectifier comprises an alternating current power supply vin, uncontrolled diode rectifier bridge arms D1-D4, diodes D5-D14, an inductor L, an inductor L1, an inductor L2, a switch tube S1, a switch tube Sa, a capacitor C and a resistor R. And the diodes D7, D8, D9 and D10 and the switch tube S1 form a bidirectional switch unit. The working mode of the hybrid rectifier can be dynamically adjusted according to load requirements and power grid conditions, so that better electric energy quality and energy efficiency are realized. According to the single-phase bidirectional unit cascaded hybrid two-level rectifier provided by the invention, higher energy conversion efficiency can be realized in a wider load range, and compared with a traditional two-level converter, energy loss can be remarkably reduced.

The invention provides a packaging structure and a manufacturing method thereof. The packaging structure comprises a substrate; a first pad on the substrate; a die on the substrate, the die including a first electrode; the first bonding pad is fixedly connected with the first electrode, the first connecting part is fixedly connected with the first bonding pad and the first electrode, the first bonding pad, the first electrode and the first connecting part are all made of copper, the first connecting part and the first bonding pad are fixedly connected through a first copper sintering layer, and the first connecting part and the first electrode are fixedly connected through a second copper sintering layer. According to the packaging structure, copper is adopted as a sintering material, the copper connecting part is fixedly connected with the copper bonding pad on the substrate and the copper electrode of the chip, the homogeneous interconnection structure formed by the copper sintering layer, the copper connecting part, the copper bonding pad and the copper electrode simplifies the material and the structure at the joint, and therefore the reliability of the packaging structure is improved.

The invention discloses an overheating protection early warning device and a high-low voltage power distribution cabinet, and the device comprises a housing, a plurality of second conductors and third conductors, interfaces disposed at the two ends of the housing, a first conductor connected with the interfaces at the two ends, an execution assembly fixedly connected with the first conductor, and an adjustment assembly for driving the second conductors and the third conductors to move. The second conductors are arranged on one side of the first conductor at intervals, the third conductors are arranged on the other side of the first conductor at intervals, and the execution assembly drives the adjusting assembly to enable the second conductors and the third conductors to approach the first conductor simultaneously. The executing assembly drives the adjusting assembly according to the temperature of the first conductor, when the temperature rises, the first conductor makes contact with the second conductor and the third conductor, the current circulation cross section is increased, resistance is reduced, heat production is reduced, and safety accidents such as equipment damage and fire disasters caused by overheating are effectively prevented.

The utility model relates to the polycrystal silicon production technical field especially, and it is a kind of novel silicon core structure, silicon core subassembly and reduction furnace structure, the silicon core adopts whole tapering structure or ladder type structure;The whole tapering structure specifically refers to: from the top to bottom of silicon core, the cross section size of silicon core continuously decreases along the axial direction;The ladder type structure specifically refers to: from the top to bottom of silicon core, the silicon core includes first silicon core section and second silicon core section connected in turn, and the cross section size of first silicon core section is greater than the cross section size of second silicon core section. Through the novel silicon core structure, silicon core subassembly and reduction furnace structure, can effectively avoid the abnormality such as molten silicon, black inclusion of silicon core in the growth process.

The application discloses a metal antenna radiation structure and an antenna array, and relates to the technical field of communication. In the main body radiation structure, more than two levels of layered structures are arranged along the height direction, the lateral size of each layer is gradually increased from bottom to top, a stepped expansion amplification structure is formed, gradual transition and impedance smooth change of electromagnetic energy in the vertical direction are realized, effective radiation is realized without loading high-loss dielectric materials, and the problem of efficiency reduction caused by dielectric loss is reduced. The multi-stage metal gradual expansion structure can compress the overall height under the premise of guaranteeing the radiation performance and bandwidth characteristics, optimize the current distribution, enhance the directivity control ability, provide a structural basis for compact arrangement and suppression of grating lobes of the array, and is suitable for low-profile, miniaturization and high-efficiency application scenarios. The technical problems that the radiation efficiency is insufficient and the structural thickness is difficult to be considered under the condition of low profile are solved, and the technical effects that high-efficiency radiation and structural compactness are realized while reducing loss are achieved.

The utility model relates to a single-layer double-frequency GNSS antenna which comprises an antenna medium and a bottom layer metal structure, a high-frequency radiation metal patch is arranged at the center position of the upper surface of the antenna medium, a low-frequency radiation metal patch is arranged on the upper surface of the antenna medium, fan-shaped metal radiation patches are arranged at the four corners of the antenna medium, and the fan-shaped metal radiation patches are arranged on the bottom layer metal structure. An arc-shaped isolation seam is arranged between the fan-shaped metal radiation patch and the low-frequency radiation metal patch; metal through hole structures are arranged on the high-frequency radiation metal patch, the low-frequency radiation metal patch and the fan-shaped metal radiation patch, and feeding points are arranged on the high-frequency radiation metal patch and the low-frequency radiation metal patch. The utility model belongs to the technical field of antennas, a high-frequency radiation metal patch and a low-frequency radiation metal patch are arranged on an antenna medium and are isolated through a non-metal gap, a double-frequency function is obtained, the size of the antenna is effectively reduced, complexity of a traditional multi-layer structure is avoided through a single-layer integrated design, and miniaturization application is facilitated.

The invention discloses a dielectric remodeling-based broadband wide-angle scanning phased-array antenna unit and antenna, and belongs to the technical field of antenna engineering, and the antenna unit comprises a metal floor, a dielectric layer, a microstrip layer, a dielectric loading layer, a parasitic layer, an air slot, a metal column, a metal wall, a concave metal baffle plate and a coaxial feed which are sequentially stacked, the concave metal baffle is connected with the metal floor, a rectangular microstrip is printed on the microstrip layer, the rectangular microstrip is connected with the coaxial feed to form L-shaped feed, rectangular electric dipoles are printed on the two sides of the rectangular microstrip, one end of each rectangular electric dipole is connected with the metal floor through a metal column, and the other end of each rectangular electric dipole is connected with the coaxial feed. The other end of the rectangular electric dipole is connected with the metal wall, the length of the metal wall is equal to that of the long side of the rectangular electric dipole, and the length direction of the metal wall is parallel to that of the long side of the rectangular micro-strip. The phased-array antenna has the characteristics of low profile, broadband, wide-angle scanning impedance matching and stable radiation.

The utility model relates to the technical field of power semiconductor modules, in particular to a low-power-consumption power semiconductor module and a power terminal, which comprises a power input part, a power transmission part and a power output part, and the input end and the output end of the power transmission part are respectively connected with the power input part and the power output part; the power transmission part is of a hollow structure; the wall thickness of the power transmission part is 1-2 mm. By adopting the scheme, on the premise of controlling the cost, the effective current sectional area of the power terminal can be enlarged, and the increase of effective resistance caused by a skin effect is reduced, so that the power loss is reduced, and the performance of the semiconductor module is improved.

The present application provides a polishing method for a vascular stent, comprising assembling a vascular stent to be polished on a polishing tool, wherein the polishing tool comprises a tool body arranged in a spiral shape, and a first connecting portion and a second connecting portion connected to both ends of the tool body, wherein the vascular stent can be sleeved outside the tool body, and electrochemical polishing is performed by alternately and repeatedly energizing both ends of the polishing tool until the vascular stent meets the polishing requirements. The present application adopts a double-sided clamping intermittent electrolysis method, combined with the coordination mode of the polishing tool and the vascular stent, so that the distribution of current in the vascular stent is significantly improved, and the polishing effect is particularly prominent, which is particularly suitable for slender vascular stents.

The invention relates to the technical field of lithium battery materials, in particular to a gradient hole composite current collector with an integrally-formed tab and a preparation method thereof.The gradient hole composite current collector with the integrally-formed tab comprises a base film, and the base film is sequentially provided with a tab area, a first area and a second area in the width direction of the base film; the first area and the second area are respectively provided with a plurality of holes penetrating through the base film in the thickness direction, the density of the holes in the first area is greater than that of the holes in the second area, the side surface of the base film is sequentially provided with a bottom layer and a metal layer, and the bottom layer and the metal layer extend out of the base film from one side of the tab area of the base film. In the technical scheme provided by the invention, the bottom layer and the metal layer cover the tab area and the part extending out of the base film is used as the tab, and the tab and the current collector main body are the same continuous metal body, so that perfect metallurgical bonding is realized, the contact resistance tends to zero, and all failure risks caused by welding or gluing are thoroughly eliminated.

The invention is suitable for the technical field of power adapters, and provides an overload adjustment method and device and a storage medium, and the overload adjustment method comprises the steps: obtaining the real-time temperature information of a power adapter; obtaining first working state information of the power adapter according to the real-time temperature information; if the first working state information meets a preset overload detection standard, acquiring real-time current information of each port; acquiring second working state information of each port according to the real-time current information of each port; if the second working state information of the port meets the preset overload adjustment standard, obtaining the maximum current information of the overload port and the rated current information of the overload port; and adjusting the current information of the overload port according to the maximum current information of the overload port, the rated current information of the overload port and a preset first overload adjustment formula. According to the scheme, the resource utilization efficiency of the multi-port power adapter can be improved, the resource distribution is optimized, and the safety and the stability of the power adapter are ensured.

The utility model provides a bottom layer chip and a corresponding semiconductor power device core stacking structure. The bottom layer chip is used for a compact packaging product of a power semiconductor chip. In the stacked core structure, the source metal on the upper surface of the bottom-layer chip needs to be electrically connected to the drain metal on the lower surface of the top-layer chip; the upper surface of the bottom layer chip is provided with a source electrode connecting metal region and a drain electrode connecting metal region; the source electrode connecting metal region of the bottom layer chip is connected with source electrode metal in the bottom layer chip; the drain electrode connecting metal region of the bottom layer chip is connected with drain electrode metal in the bottom layer chip; the insulating layer covers the surfaces of the source electrode connecting metal region and the drain electrode connecting metal region; a source electrode connecting metal area window and a drain electrode connecting metal area window are arranged on the insulating layer; only arranging a windowing structure of a source electrode connecting metal region in a core stacking region; only the windowing structure of the drain electrode connecting metal area is arranged outside the core stacking area.

The invention discloses a uranium-containing wastewater treatment system and method, and relates to the field of nuclear industry wastewater treatment. In order to solve the problems in the prior art that the existing electrochemical treatment technology still has some bottlenecks in the aspect of strong acid wastewater treatment, for example, the surface activity of an electrode is reduced due to strong competition of H < + > in a strong acid environment on active sites of the electrode, and the preparation of a functionalized electrode is generally complicated in process and high in cost; the invention provides a uranium-containing wastewater treatment module, which solves the technical problems that the uranium-containing wastewater treatment module seriously affects the industrial application of the technology, the traditional electrochemical method needs higher voltage in the uranium removal process, the problem of high energy consumption is directly caused, and the current requirements on energy conservation and environmental protection are difficult to meet, and the technical scheme provided by the invention is as follows: the uranium-containing wastewater treatment module comprises an anode and a cathode; the anode is made of a metal material, and the cathode is made of a carbon-based material; and the power supply is used for providing constant voltage for the anode and the cathode. The method is suitable for treating uranium-containing wastewater.

This invention relates to a multi-resonant, multi-step-down ratio switched-capacitor converter, belonging to the field of power electronics technology. The invention addresses the technical problem of existing switched-capacitor converters struggling to achieve multiple fixed step-down ratios while maintaining high efficiency and high power density within the same topology. The invention includes: an input port; a switching network composed of fourteen MOSFET switches; a capacitor network composed of five flying capacitors; and first and second resonant inductors connected between the switching network and the output side. The converter is a single-stage topology, with the above components forming a single resonant network. By adjusting the switching timing, three fixed step-down ratios—8:1, 4:1, and 2:1—can be achieved within the same topology. The converter operates in open-loop mode, with the switching frequency matching the resonant frequency, achieving zero-current switching for all switches. The two-phase circuits on the output side operate in a staggered 180° manner to reduce current stress. The output side also includes first and second output ports connected in parallel, along with an output filter capacitor, which, after filtering, jointly supply power to the load.

The invention relates to the technical field of alloy pole plates, in particular to an aluminum-magnesium-silicon alloy pole plate with multiple layers of carbon-based coatings and a preparation method thereof.The aluminum-magnesium-silicon alloy pole plate with the multiple layers of carbon-based coatings comprises an aluminum-magnesium-silicon alloy base material layer, and the multiple layers of carbon-based coatings are connected to the surface of the aluminum-magnesium-silicon alloy base material layer; the multi-layer carbon-based coating comprises a CrN layer, a CrNC layer, a CrC layer and an amorphous carbon coating doped with metal atoms and nitrogen atoms which are sequentially arranged in a stacked mode, and the CrN layer is located on the side close to the aluminum-magnesium-silicon alloy base material layer. The bonding force between the multi-layer carbon-based coating and the Al-Mg-Si alloy base material layer of the aluminum-magnesium-silicon alloy pole plate with the multi-layer carbon-based coating is relatively strong, and the aluminum-magnesium-silicon alloy pole plate with the multi-layer carbon-based coating has relatively good conductivity and corrosion resistance, so that the problem that the bonding force, the corrosion resistance and the interface conductivity between the existing coating and the Al-Mg-Si alloy pole plate are difficult to improve at the same time is solved.

This invention provides a diode structure, comprising: a substrate; multiple filling trenches disposed on the substrate, extending along the length or width direction of the substrate and spaced apart along the length or width direction of the substrate; an epitaxial filling layer disposed within each filling trench; a first metal layer connected to at least one epitaxial filling layer within the multiple filling trenches to form a first ohmic contact; and a second metal layer disposed on the substrate and forming a Schottky contact with the substrate. This application solves the problem of low high-voltage withstand capability in existing SiC diodes.

The invention discloses a metal antenna radiation structure and an antenna array, and relates to the technical field of communication, and the metal antenna radiation structure is characterized in that more than two stages of layered structures are arranged in a main body radiation structure along the height direction, so that the transverse size of each layer is gradually increased from bottom to top, and a stepped expansion amplification structure is formed; progressive transition and impedance smooth conversion of electromagnetic energy in the vertical direction are achieved, effective radiation is achieved under the condition that a high-loss dielectric material does not need to be loaded, and the problem of efficiency reduction caused by dielectric loss is solved. The multi-stage metal diverging structure can compress the overall height, optimize the current distribution and enhance the directivity control capability on the premise of ensuring the radiation performance and the bandwidth characteristic, provides a structural basis for compact array arrangement and grating lobe suppression, and is suitable for low-profile, miniaturized and high-efficiency application scenes. The technical problem that the radiation efficiency is insufficient and the structure thickness is difficult to consider at the same time under the low profile condition is solved, and the technical effects of high-efficiency radiation and compact structure are achieved while the loss is reduced.

This application relates to the technical field of electronic filtering, and in particular to a miniaturized ceramic dielectric filter capable of handling high power. The filter includes a ceramic cover plate, a cavity, an insulating kit, an inner conductor sheet, and a connector. The ceramic cover plate is silver-plated and sealed to the top of the cavity. Each side of the cavity has an interface penetrating the side wall. Two insulating kits are located inside the cavity, each corresponding to one of the interfaces. The inner conductor sheet is housed within the insulating kit. The connector passes through the interface, and its end connects to the inner conductor sheet. This application improves transmission efficiency, reduces losses, lowers heat dissipation, and extends product lifespan. The insulating dielectric completely encapsulates the inner conductor, effectively increasing the filter's power output. Compared to conventional ceramic dielectric filters ranging from a few watts to tens of watts, this filter can handle high-current, high-frequency signals, thus broadening its application scope.

The invention relates to a negative pole piece of a nickel-zinc secondary battery and the nickel-zinc secondary battery. The nickel-zinc secondary battery negative electrode plate comprises a negative electrode substrate and a negative electrode material coated on the negative electrode substrate, wherein the negative electrode material comprises a negative electrode active substance, a surfactant, a binder and chopped fibers; the fiber length of the chopped fibers is 0.1 mm-2mm, and the mass percent of the chopped fibers in the negative electrode material is 1%-4%. According to the scheme provided by the invention, the negative electrode material of the negative electrode plate of the nickel-zinc secondary battery can be effectively prevented from being stripped from the negative electrode substrate, spontaneous dissolution of the negative electrode material in an electrolyte is inhibited, the long-term storage performance and the cycle life performance of the nickel-zinc secondary battery are both considered, and the long-term storage performance and the cycle life performance of the nickel-zinc secondary battery are improved.

The invention belongs to the technical field of semiconductor devices, and particularly relates to a high-reliability LED chip and a preparation method thereof, and the preparation method comprises the following steps: forming an epitaxial wafer structure; etching the p-type semiconductor layer to the n-type semiconductor layer through a patterning etching process to form an n-type semiconductor mesa, the n-type semiconductor mesa being a concave curved surface; an n contact electrode is arranged on the concave surface of the n-type semiconductor mesa, and the n contact electrode is subjected to high-temperature annealing to form n-type ohmic contact; and arranging a p contact electrode on the p-type semiconductor layer, and performing high-temperature annealing on the p contact electrode to form p-type ohmic contact. According to the invention, the n-type semiconductor layer etching mesa is modified and designed, the n-type semiconductor layer etching mesa is etched into a concave curved surface, the area of the concave surface is larger than the projection area of the concave surface in the vertical direction, and the center of the concave surface is the deepest etched part, so that the specific contact resistivity is reduced, the transverse current guiding capability is improved, and the current distribution is improved; and the antistatic capability, the service life and the reliability of the device are improved.

The invention provides an intravascular stent polishing method which comprises the steps that a to-be-polished intravascular stent is assembled on a polishing tool, the polishing tool comprises a spirally-arranged tool body, a first connecting part and a second connecting part, the first connecting part and the second connecting part are connected to the two ends of the tool body, and the intravascular stent can be arranged outside the tool body in a sleeving mode; and electrochemical polishing is conducted by alternately and repeatedly electrifying the two ends of the polishing tool till the intravascular stent meets the polishing requirement. The double-side clamping intermittent electrolysis method is adopted, the mode that the polishing tool is matched with the intravascular stent is combined, distribution of current in the intravascular stent is remarkably improved, the polishing effect is particularly outstanding, and the method is particularly suitable for the long and thin intravascular stent.

The invention discloses a double-antenna design method for high-precision positioning, and belongs to the technical field of high-precision positioning antennas. The radiation unit is used as a radiator, so that the resonant frequency and the radiation characteristic of the antenna are optimized, the radiation unit adopts a winding form, and the physical size and the effective length of the antenna are optimized; meanwhile, the slotting technology is applied, the current distribution and bandwidth of the antenna are optimized, the PCB serves as a reflecting surface, the inner end in the radiation unit is used for grounding and feeding, the resonance characteristic and impedance of the antenna are optimized, the included angle between the two antennas is designed to be 90 degrees, the port isolation degree and the polarization diversity gain are optimized, and therefore the antenna is smaller in size, small in size and high in practicability. In the 2.4 G frequency band, the horizontal radiating surface has good omnidirectivity, the anti-multipath effect is achieved, the occupied area is reduced, meanwhile, the cost is reduced, and the positioning precision is improved.

The application discloses a kind of double-beam microstrip antennas, including first substrate layer and second substrate layer, first substrate layer is equipped with SIW waveguide structure, second substrate layer is located above first substrate layer;The top surface of second substrate layer is provided with microstrip antenna, SIW waveguide structure is equipped with coupling gap, microstrip antenna includes central axis part, the two sides of central axis part have symmetrically arranged rectangular part, the length direction of rectangular part is consistent with the length direction of central axis part, the upper end of central axis part is protruding relative to the upper end of rectangular part, the lower end of central axis part is protruding relative to the lower end of rectangular part, the middle area of the side of rectangular part away from central axis part is provided with notch, the two corner parts of the side of rectangular part away from central axis part are respectively provided with separation gap, separation gap makes corresponding corner part and other areas of rectangular part separate.This microstrip antenna can realize double-beam, can excite TM02 mode, and frequency band width is relatively wide, can cover N257 and N261 operating frequency, especially suitable for 5G communication system.

The invention provides a power device design method and system, and relates to the technical field of chip design, and the method comprises the steps: determining the expected breakdown voltage of a power field effect transistor; determining epitaxial layer doping concentration, epitaxial layer thickness and epitaxial layer resistivity of the power field effect transistor; determining the well width and the well depth of the power field effect transistor by combining an electric field uniformity principle; calculating estimated on-resistance of the power field effect transistor under different geometric unit types and different well spacing by combining a distribution mode of an electric field in a depletion region of the power field effect transistor; determining a target geometric unit type; calculating the optimal well spacing of the power field effect transistor based on the target geometric unit type; and outputting the epitaxial layer doping concentration, the epitaxial layer thickness, the epitaxial layer resistivity, the well width, the well depth, the target geometric unit type and the optimal well spacing as design parameters. While high performance of the power device design is ensured, the design period is shortened, and the design cost is reduced.

The application discloses a bus multi-material resistance welding process and a gradient current-distribution electrode structure and belongs to the technical field of resistance welding.The application integrates an electrode quick-change mechanism in a single welding station, can automatically switch a chromium-zirconium-copper inlaid tungsten-copper electrode and a graphite electrode, respectively completes two types of welding procedures of copper braided wire-copper plate and copper plate-L-shaped copper bent plate, adopts a gradient current-distribution electrode with a waist-shaped through groove on a working surface in a matched mode, realizes uniform distribution of current in a large-area welding area with a size of 21*15 mm or above, simultaneously constructs a full-process automatic production line of "welding-air knife cleaning-CCD visual detection-automatic sorting", and effectively solves problems of uneven welding current of large-area copper workpieces, low electrode change efficiency, easy interference of detection by cooling water and the like, electrode switching time is less than or equal to 5 s, the welding point drawing force is stable, the bus welding full-process unmanned operation can be realized, and production efficiency and product consistency are greatly improved.

The embodiment of the invention provides an electrolyte ice ball jet machining system and method. Comprising a rack provided with a clamping device used for clamping a workpiece, a spraying device used for spraying a solid electrolyte to the workpiece, a power supply device connected to the spraying device and the workpiece, an electrolyte freezing device used for freezing a liquid electrolyte into the solid electrolyte, and a driving device used for driving the spraying device to move relative to the workpiece, the electrolyte freezing device is arranged on the electrolyte pipeline, the electrolyte pipeline is connected with the spraying device, and the driving device is arranged on the rack. According to the embodiment of the invention, the solid electrolyte is adopted for jet machining, so that the problem of non-uniform Gaussian current distribution on the surface of the workpiece in traditional electrochemical jet machining can be effectively improved, and the machining precision is remarkably improved.

The invention discloses a power semiconductor device soft turn-off driving device and method. The device comprises a signal processing module, a power amplification module and a power semiconductor device. The signal processing module outputs a corresponding signal according to an input on-off signal and a circuit fault signal, and performs power amplification through the power amplification module so as to drive the power semiconductor device to work correspondingly; when the circuit fault signal is no fault, if the switch-on and switch-off signal is a switch-on signal, a signal for charging the power semiconductor device is output; if the turn-on and turn-off signal is a turn-off signal, outputting a signal for discharging the power semiconductor device in a fast turn-off mode and a slow turn-off mode at the same time; and when the circuit fault signal is a fault, outputting a signal for discharging the power semiconductor device in a slow turn-off form. According to the invention, the utilization efficiency of the circuit can be improved, current distribution is facilitated, devices with lower current capability are selected, and the cost is reduced; as no additional timing circuit is needed, the circuit structure is simplified.

The application discloses a bidirectional thyristor structure electrostatic protection device, which comprises a substrate of a first conductive type, a buried layer and an epitaxial layer formed in the substrate, an isolation well region formed in the epitaxial layer, two first conductive type well regions one formed in a region surrounded by the isolation well region in the epitaxial layer, two second conductive type well regions two, a first conductive type intermediate well region between the two well regions two and spaced apart from the well regions two, a surface layer of the well region one formed with a heavily doped region one, a heavily doped region two and a floating heavily doped region, the floating heavily doped region extending to a surface layer of the adjacent well region two, an intermediate heavily doped region formed on the intermediate well region and extending to a surface layer of the adjacent well region two, a gate oxide layer formed on a surface layer of the substrate, and the gate oxide layer and the intermediate heavily doped region being short-circuited. The application can reduce the trigger voltage, improve the sustain voltage and reduce the risk of device latching.