99results about How to "Improved current distribution" patented technology

An antenna for the communication terminal having a printed conductor pattern applied to a support, wherein the printed conductor pattern includes a first printed conductor pattern section, the end of which is capacitively loaded by a second printed conductor pattern section for tuning the antenna to a desired radio channel.

The invention discloses a wear-resistant workpiece and a manufacturing method of a wear-resistant coating thereof. The preparation method of the wear-resistant coating comprises the following steps: forming a preparation piece according to the structure of a required wear-resistant workpiece; coating nickel on the surface of the preparation piece through a double-pulse method, thus forming a nickel-coated transition piece; and coating a hard chromium layer on the surface of the nickel-coated transition piece, thus forming the wear-resistant coating on the surface of the preparation piece. For the manufacturing method of the wear-resistant workpiece, a step of coating nickel on the surface of the workpiece through a double-pulse nickel coating method is added; and the double-pulse nickel coating method is characterized in that the magnitude of current or voltage is regulated by an external control means, the current is additionally controlled by controlling the pulse switch-on time, the pulse switch-off time, the pulse duty factor, the pulse current density and the like, and corresponding variables are changed to respectively achieve the effects of increasing the cathode current density, inhibiting the generation of side reaction, reducing the impurity content in the coating, improving the current distribution and the like, thus improving the quality of the coated nickel layer and prolonging the service life of the wear-resistant workpiece.

The invention relates to a high gain broadband dielectric lens Vivaldi antenna. The array antenna comprises a substrate, a radiation slot, a dielectric lens and a Chebychev tapered strip line feeder. According to the high gain broadband dielectric lens Vivaldi antenna, through changing the structural size of the dielectric lens, the fluctuation of antenna radiation impedance can be effectively improved so as to obtain better impedance matching, the transmission speed of an electromagnetic wave in the slot can be reduced according to the high dielectric constant of the lens, the current distribution on an antenna aperture is improved, thus a spherical wave is a nearly a plane wave, the antenna radiation efficiency is raised, and a higher antenna gain is obtained. According to a Chebychev tapered strip line, the impedance matching of the antenna can be improved further, and the working band is broadened. The array antenna in the invention has the characteristics of high gain and broad band and is suitable for a radiation unit of wideband array antennas of the field of mobile communication and a military radar.

The present invention provides a winding lithium paste battery. The winding lithium paste battery has a battery cell formed by winding of a positive plate and a negative plate, the electrode active conductive material layer of the electrode piece comprises non-bonded and fixed electrode active conductive particles. The winding lithium paste battery further comprises a leakage preventing portion, the leakage preventing portion is arranged at the edge of the positive plate and / or the negative plate or arranged on a housing to prevent the positive pole active conductive particles in the positivepole active conductive material layer from being leaked from the positive plate and / or prevent the negative pole active conductive particles in the negative pole active conductive material layer frombeing leaked from the negative plate. The winding lithium paste battery is more compact in structure, can regulate the shape for the application occasions, and is convenient and flexible in application. Besides, the winding lithium paste battery employs the uniformly distributed multi-tab group or full-tab design to effectively improve the current conduction capacity, improve the current distribution and improve the utilization rate of the electrode active conductive materials.

A light emitter includes a first mirror that is an epitaxially grown metal mirror, a second mirror, and an active region that is epitaxially grown such that the active region is positioned at or close to, at least, one antinode between the first mirror and the second mirror.

The invention discloses a circular polarized antenna with omnidirectional broad axial ratio beam width. The circular polarized antenna comprises a parasitic element, an upper-layer medium baseplate, an exciting element, a middle-layer medium baseplate, an earthing unit, a lower-layer medium baseplate and a 3dB mixed electric bridge electric feeding network, wherein the parasitic element and the exciting element are respectively arranged on the upper surfaces of the upper-layer medium baseplate and the middle-layer medium baseplate; the upper-layer medium baseplate and the middle-layer medium baseplate are separated by an air layer; the 3dB mixed electric bridge electric feeding network is placed on the lower surface of the lower-layer medium baseplate; an internal conductor of a coaxial electric feeding unit is connected with an input port of the 3dB electric bridge electric feeding network; and an external conductor of the coaxial electric feeding unit penetrates through the lower-layer medium baseplate and is connected with the earthing unit. According to the invention, not only is the circular polarized radiation realized very well, at the same time, the circular polarized antenna has broader axial ratio beam width within the omnidirectional range, is small in volume, is low in section plane, is light in weight, is simple in structure, and is easy to be conformal.

The invention discloses a dual-polarized microstrip antenna which comprises at least one layer of radiating body, wherein the radiating body is connected with two feeding ports; and at least one isolation angle is arranged on the radiating body. In the embodiment of the invention, the isolation angle is arranged on the radiating body of the dual-polarized microstrip antenna, the current distribution of the radiating body can be optimized, and the current which is coupled from one feeding port to the other feeding port is weakened, therefore, the isolation degree between the two feeding ports can be improved, the development and manufacturing costs of the dual-polarized microstrip antenna are low, and the implementation of the dual-polarized microstrip antenna is simple.

The invention discloses electrolytic tinning liquid, which comprises the following raw material components: (A) stannous salt of which the stannous tin ion concentration is 1-100g / L, (B) acid of which the total concentration is 10-200g / L, (C) a surfactant selected from one or more of nonionic surfactants of which the structural formula are as follows: R1COO(C2H4O)nH and R2S(C2H4O)mH, being 1-20g / L in the total concentration, (D) a current dispersing agent which is selected from an unsaturated bond-containing dicarboxylic acid derivative or a salt thereof and is 0.01-2g / L in concentration, (E) conducting salt of which the concentration is 2-10g / L, and (F) a pH regulating agent for regulating the pH value of the electrolytic tinning liquid to 2.0-4.0. By adopting the electrolytic tinning liquid, the current distribution among steel balls, electronic elements and conducting balls in an electrolytic tinning drum can be optimized, the steel balls and the electronic elements are prevented from being bonded on the conducting balls by means of electroplating, and the quality of electrolytic tinning products is improved.

A semiconductor light-emitting device capable of improving current distribution, and a method for manufacturing the same is disclosed, wherein the semiconductor light-emitting device comprises a substrate; an N-type nitride semiconductor layer on the substrate; an active layer on the N-type nitride semiconductor layer; a P-type nitride semiconductor layer on the active layer; a groove in the P-type nitride semiconductor layer to form a predetermined pattern in the P-type nitride semiconductor layer; a light guide of transparent non-conductive material in the groove; and a transparent electrode layer on the P-type nitride semiconductor layer with the light guide.

A communication device including a supporting plate and an antenna system is provided. The supporting plate includes a conductive plate and a non-conductive plate. The conductive plate has a first edge and a second edge. The antenna system includes at least two antennas, which are both disposed at the first edge of the conductive plate and operate in at least a first band. A distance between the first edge and the second edge of the conductive plate is about 0.25 wavelength of the lowest frequency in the first band, and the distance is smaller than a length of the first edge.

The invention discloses a semiconductor device based on a graphene electrode. The semiconductor device based on the graphene electrode is formed by sequentially combining a substrate layer, a first semiconductor layer, an active layer, a second semiconductor layer and a graphene electrode layer. The graphene electrode layer is fixedly combined with the second semiconductor layer through an intensifier electrode in a pining fixing mode, so that materials of the intensifier electrode and graphene materials of the graphene electrode layer are combined mutually into a combination electrode. The invention further discloses a manufacturing method of the semiconductor device based on the graphene electrode. According to the manufacturing method, a graphene film and collaborative conducting materials form the combination electrode, the combination electrode is arranged on a system which is sequentially composed of the substrate, a conductor layer, the active layer and the semiconductor layers, and then a complete device structure is formed. According to the semiconductor device based on the graphene electrode and the manufacturing method of the semiconductor device, the graphene electrode forms the combination structure with pining fixed connection adopted, the adhesion between graphene and the substrate is improved, and the current distribution in the device can be improved through patterning control over the graphene electrode layer.

The invention discloses a P electrode structure of an LED chip, an LED chip structure and a manufacturing method therefor. The P electrode is formed by multiple layers of metals, wherein Al is at the lowest layer; the LED chip structure comprises a substrate, an N type layer, an active layer, P type layer, an ITO transparent conductive layer, a P electrode and an N electrode; the N type layer, the active layer and the P type layer are formed on the substrate in sequence; the N type layer is connected with the N electrode; the ITO transparent conductive layer is formed on the P type layer; the P electrode is formed on the ITO transparent conductive layer, wherein the metal Al is arranged on the lowest layer of the P electrode; and Al is heated and permeated to the ITO transparent conductive layer, so that schottky contact is formed between the ITO transparent conductive layer and the P type layer. According to the P electrode structure of the LED chip, the LED chip structure and the manufacturing method therefor, the luminous reflectance of the electrode is improved; the luminance of the LED chip is improved; and the manufacturing process for the LED chip is simpler.

A blue / green LED chip of gallium nitride base in high brightness and high voltage type is prepared as utilizing sapphire as substrate and growing multiple layer of GaInN / AIGaN / GaN quantum well structure, covering transparent conductive layer and P and N electrode on stage by utilizing electronic beam evaporation method, applying a photo etching technique to prepare a special horizontal structure of P electrode and N electrode.

The invention discloses a semiconductor light-emitting diode chip and relates to the technical field of light-emitting diode production. Corresponding graphical current expanding layers are arranged below an N welding disc and a P welding disc respectively, electronic recombination luminescence exists in all light-emitting recombination regions, the area of the light-emitting recombination regions is increased on the basis of the prior art, and chip current distribution and light-emitting luminance can be effectively improved; meanwhile, graphical current expansion can effectively increase surface adhesion force of the welding discs, and reliability of the chip can be improved.

The invention discloses a communication apparatus. The apparatus comprises a support plate and an antenna system. The support plate comprises a current-conducting plate and a non-current-conducting plate. The current-conducting plate possesses a first edge and a second edge. The antenna system is located on the first edge of the current-conducting plate. The antenna system at least comprises a first antenna and a second antenna. The first antenna and the second antenna are operated in at least one first frequency band. A distance of the first edge and the second edge of the current-conducting plate is close to 0.25 times of a wavelength of a minimum frequency of the first frequency band and the distance is less than a length of the first edge. The antennas of the invention can reach good isolation without an isolation element and antenna efficiency basically maintains the same.

The invention relates to an EFB start-stop battery positive and negative electrode with high charge acceptance capacity and a preparation method thereof, belongs to the technical field of EFB start-stop batteries, and mainly solves the problem that the high-temperature life of a battery is reduced due to carbon fibers contained in existing lead paste. The main features are as follows: an anode lead paste formula includes 0.2% -- 0.4% of expanded graphite, 0.08% - 0.12% of short fiber, 0.1% - 0.3% of metal sulfate additive, 0.6% - 1.0% of 4BS seed, 9% - 12% of pure water, 8% - 10% of 1.38 g / cm3sulfuric acid solution and the balance of lead powder; a cathode lead paste formula includes 0.1 to 0.2 percent of carbon nanotube slurry, 0.1 to 0.2 percent of carbon black A, 0.02 to 0.06 percent of carbon black B, 0.08 to 0.12 percent of short fiber, 0.15 to 0.25 percent of organic additive A, 0.08 to 0.12 percent of organic additive B, 0.5 to 0.8 percent of nanometer barium sulfate, 8 to 10 percent of pure water, 8 to 10 percent of 1.38 g / cm3 sulfuric acid solution and the balance of lead powder. The invention has the characteristics of greatly improving battery charging acceptance capacity and further prolonging the battery life, and is mainly used for EFB starting and stopping batteries with high charging acceptance capacity.

The invention discloses a large-power high-brightness light-emitting diode (LED) chip and a production method thereof. The large-power high-brightness LED chip comprises a metal substrate. An LED epitaxial wafer into which a photonic quasi-crystal structure is embedded is arranged above the metal substrate. Passivating protection layers are arranged on the two sides of the epitaxial wafer. A metal bonding layer, a metal reflecting layer, a current expansion and P-type ohmic contact layer, a P-type semiconductor layer, a light emitting layer, an N-type semiconductor layer into which the photonic quasi-crystal structure is embedded, and an N-type ohmic contact electrode are sequentially arranged on the epitaxial wafer from the bottom to the top. The passivating protection layers are arranged on the two sides of the epitaxial layer above the metal substrate. The invention additionally discloses a production method for the chip. The invention solves the problems of low-efficiency light extraction and ineffective heat dissipation of the LED chip at the same time, overcomes the defects of a surface photonic crystal LED structure, and provides an effective solution to the development of large-power high-brightness LEDs.

The invention discloses a double-layer butterfly antenna and belongs to the field of local discharge UHF detection technologies. The double-layer butterfly antenna comprises a dielectric substrate, afirst butterfly patch arranged on the upper surface of the dielectric substrate and a second butterfly patch arranged on the lower surface of the dielectric substrate, wherein a first microstrip lineconnected with the first butterfly patch is arranged in the middle of the upper surface of the dielectric substrate, a second microstrip line is arranged in the middle of the lower surface of the dielectric substrate, the two ends of the second microstrip line are connected with the second butterfly patch and the first microstrip line respectively, the first microstrip line and the second microstrip line are etched on the upper surface of the dielectric substrate and the lower surface of the dielectric substrate respectively, the two ends of the first butterfly patch are provided with notchesrespectively, and the two ends of the second butterfly patch are provided with notches respectively. Through the double-layer butterfly antenna, on the premise of guaranteeing antenna miniaturization,more electromagnetic wave signals can be received, and the detection sensitivity and anti-interference capability of a UHF detection system are improved.

The invention discloses an omnidirectional radiation vibrator array antenna for loaded coupled feeding, which relates to an omnidirectional radiation vibrator array antenna and is used for solving the problems of small bandwidth, low unit electrical length gain and poor omni-directivity existing in the conventional omnidirectional antenna. The front face of a medium plate 1 is printed with two groups of vibrators, a coplanar waveguide central feeder line, a feeding port matching branch knot and radiation terminal load; the upper end of the coplanar waveguide central feeder line is connected with the radiation terminal load, and the lower end of the coplanar waveguide central feeder line is connected with the feeding port matching branch; two groups of vibrators are arranged one above the other; each group of vibrators comprises a left side vibrator, a right side vibrator and two loaded horizontal metal strips; the left side vibrator and the right side vibrator are arranged symmetrically on both sides of the coplanar waveguide central feeder line; the two loaded horizontal metal strips are arranged symmetrically on the outer sides of the left side vibrator and the right side vibrator; the two ends of an upper horizontal feeder line are connected with two metallized through holes above respectively; and the two ends of a lower horizontal feeder line are connected with two metallized through holes below respectively. The omnidirectional radiation vibrator array antenna belongs to a printed antenna for communication.

The invention discloses an isometric segmentation method for aluminum electrolysis cell cathode steel rods. A segmentation gap between two sections of cathode carbon rods is equal to a gap between two sets of anode carbon blocks of an aluminum electrolysis cell; and the two sections of cathode steel rods are symmetrical about the center line of the cathode carbon blocks of the aluminum electrolysis cell. The method is wide in application range, is applied to the production for real measurement, reduces the production voltage fluctuation by near 50%, reduces the level current by about 30%, is more obvious in current stabilizing and energy saving effect, is convenient for segmentation technology operation, and needs no complex design and calculation.

A folded oscillator antenna comprises a support, two support structures, two radiating arms, two input ends and two loading ends, wherein the two support structures are symmetrically arranged at a left side and a right side of the support, each support structure comprises a round pipe and a non-metal round cover, the non-metal round cover sleeves one end, near to the support, of the round pipe so as to fix the round pipe and the support, each radiating pipe comprises a metal round cover and two metal strips, the metal round cover is arranged at one end, far away from the support, of the round pipe, the two metal strips are symmetrically arranged on an upper surface and a lower surface of the round pipe and are electrically connected with the metal round cover, the two input ends are led out of the metal strips on the upper surface or the lower surface of the round pipe of each radiating arm, and the two loading ends are led out of the other metal strip, except the metal strip used as the input ends, in the two metal strips of each radiating arm. By the folded oscillator antenna, integration of the support structures and the antenna is achieved, and the folded oscillator antenna has the advantages of light weight and a simple structure, can be folded and can be used as an antenna of a high-frequency radar moving on ground and a satellite-borne platform.

The invention provides a megasonic electroplating device for improving metal microelectroforming uniformity and a method. Bi-directional alternate megasonic waves are coupled in the electroplating process. The device comprises a megasonic plating tank, and the megasonic plating tank comprises piezoelectric ceramic groups, an electroplating tank, a waterproof tank and a water bath; the electroplating tank is fixed in the waterproof tank by sticking to the wall; the waterproof tank is positioned in the water bath and is fixed to the water bath through an upper cover plate which is integral withthe waterproof tank; the piezoelectric ceramic groups are pasted outside the two side walls of the electroplating tank; the electroplating tank is made from a quartz material; the wall thickness of the electroplating tank is the half-wave length of utilized megasonic frequency in quartz; and megasonic signals are introduced into the piezoelectric ceramic groups, and time control of bi-directionalmegasonic vibration is achieved. The method for improving metal microelectroforming uniformity of the megasonic electroplating device comprises the steps that a photoresist microstructure is manufactured on a substrate, and glue film imaging is achieved; and bi-directional alternate megasonic wave irradiation is applied during the electroplating process. According to the megasonic electroplating device and the method, operation is easy and feasible, and uniformity of a plating during the metal microelectroforming process can be effectively improved.

The invention provides a lead-acid battery grid structure which comprises an outer frame and internal ribs. The internal ribs are thin and dense, and thickness or diameter of the internal ribs is less than or equal to 1 / 2 of thickness of the outer frame but greater than or equal to 1.2 mm. spacing between each two adjacent internal ribs is 5-15 mm. Thick ribs which have consistent thickness with the outer frame are arranged at the inner part of the outer frame. The lead-acid battery grid structure is used for making a battery plate. During pasting, the pasting thickness is easy to control and consistency is good. Contact area between the ribs and lead paste is large so as to improve current distribution. The distance between the lead paste and the ribs is near. Capacity loss caused by softening of the lead paste is alleviated. Thus, battery performance is enhanced and service life of a battery is prolonged.

The invention belongs to the technical field of electromagnetic fields and microwaves, and particularly relates to a method for expanding the lower limit of a working frequency band of a coplanar Vivaldi antenna. A closed groove similar to a radiation patch in shape is formed in a traditional coplanar Vivaldi antenna metal radiation patch, a curve radiation arm is constructed, two metal radiation patches with gradually changing indexes are equivalently constructed, and current distribution is improved; the first curve radiation arm 12, the first linear radiation arm 13 and the second linear radiation arm 14 form an upper side loop radiation structure, and the second curve radiation arm 22, the third linear radiation arm 23 and the fourth linear radiation arm 24 form a lower side loop radiation structure, so that the effective length of a current propagation path on the surface of the antenna is effectively prolonged, and the low-frequency radiation capability of the antenna is enhanced; and meanwhile, parallel slot lines are arranged on the first linear radiation arm 13 and the third linear radiation arm 23, and resistance loading is carried out, so that impedance matching is facilitated, antenna reflection is reduced, part of low-frequency components are absorbed to the greatest extent, and then the lower limit of the working frequency band of the antenna is further remarkably expanded.

The invention provides an HEV soft package battery cell and a battery pack, the HEV soft package battery cell comprises a battery cell main body and a battery cell tab, the battery cell main body is provided with an aluminum-plastic film shell, and a pole group and an electrolyte which are sealed in the aluminum-plastic film shell, the battery cell tab is provided with a positive pole tab and a negative pole tab, one ends of the positive pole tab and the negative pole tab are positioned in the aluminum-plastic film shell and are connected with pole group, and other ends of the positive pole tab and the negative pole tab extend out of the aluminum-plastic film shell. The battery cell is characterized in that the battery cell main body is of a cuboid structure, the length L of the battery cell main body is smaller than or equal to 250 mm, the width W and the thickness H of the battery cell main body meet the conditions that 20%L <= W <= 60%, and 1%L <= H <= 5%L. According to the HEV softpackage battery cell, the high-rate charging and discharging capacity of the battery cell can be guaranteed, the power performance of the battery cell is guaranteed, the safety performance of the battery cell can also be improved, and the HEV soft package battery cell has good practicability.

The invention relates to a manufacturing method of an AlGaInP light-emitting diode, which comprises the following steps: completing the steps of performing epitaxial growth on an AlGaInP light-emitting diode chip and manufacturing an electrode, then increasing one-time sideetching for a chip substrate after half-cutting of the chip and before packaging, and changing the flow direction of current; optimizing the current distribution; and reducing the light absorption of the substrate and improving the light extraction efficiency of the light-emitting diode. By adopting the manufacturing method, the light intensity of the chip can be improved by about 3%-15%.

The invention provides a semiconductor light emitting device and a manufacturing method thereof. The semiconductor light emitting device comprises a second electrode, a first semiconductor layer of a first doped type, an active layer, a second semiconductor layer of a second doped type, a first degenerate semiconductor layer of a first doped type, a second degenerate semiconductor layer of a second doped type, and a first electrode electrically connected with the second degenerate semiconductor layer, wherein the first semiconductor layer of the first doped type is electrically connected with the second electrode; the active layer is formed on the first semiconductor layer; the second semiconductor layer of the second doped type is formed on the active layer; the first degenerate semiconductor layer of the first doped type is formed on the second semiconductor layer; and the second degenerate semiconductor layer of the second doped type is formed on the first degenerate semiconductor layer. According to the invention, a positively biased tunneling pn junction is inserted into the semiconductor light emitting device, thus the current distribution uniformity of a power type semiconductor light emitting device is greatly improved, and the current crowing effect is solved.

The invention discloses a cell bottom structure of an electrolytic cell. The cell bottom structure comprises an electrolytic cell (1) and a cathode bus (2), wherein the bottom of the electrolytic cell (1) is provided with columnar cathode carbon blocks (3) which are perpendicular to the bottom of the electrolytic cell (1); and the lower ends of the columnar cathode carbon blocks (3) are connected with the cathode bus (2). In the cell bottom structure, the column cathode carbon blocks are vertically inserted in the bottom of the electrolytic cell, and the lower ends of the columnar cathode carbon blocks are connected with the cathode bus, so that current which is led in from anode carbon blocks is led out downwards from the columnar cathode carbon blocks through molten aluminum to reduce horizontal current in the molten aluminum; and a cathode which extends into the molten aluminum can effectively reduce fluctuation of the molten aluminum, so that a stable molten aluminum surface is achieved to reduce polar distance between the cathode and an anode and reduce the cell voltage to fulfill the aim of reducing power consumption.

The invention discloses an aluminum electrolytic tank composite cathode structure containing a highly conductive skeleton network. Since cathode current collector skeletons are pre-installed inside the cathode, cathode current collector skeletons with different shapes are pre-arranged in a cathode carbon block, so that the cathode structure can redistribute the distribution and the size of the level current in aluminum liquid, and the mechanical properties of the cathode can be improved and the service life of the cathode is improved. By virtue of the cathode, according to structural parameters and types of the materials determined by the actual groove design, the horizontal current density of the aluminum liquid along the long axis and short axis of the electrolytic tank can be significantly reduced and thus the vertical amplitude of fluctuation of the aluminum liquid-electrolyte interface is weakened and the proper melt horizontal movement is maintained, the electrolytic tank can run smoothly in a low polar distance, the energy conservation and consumption reduction are realized, and the processing of the structure is relatively simple and easily implemented.