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Manufacturing method of AlGaInP light-emitting diode

A technology of light-emitting diodes and manufacturing methods, which is applied to electrical components, circuits, semiconductor devices, etc., can solve the problems of not being suitable for small-sized light-emitting diodes, reducing the luminous efficiency of small-sized chips, reducing the light-emitting area of ​​the front surface, etc., and achieving optimal current distribution. , improve light efficiency, avoid damage to the effect

Inactive Publication Date: 2011-08-24
DALIAN MEIMING EPITAXIAL WAFER TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, these methods are complicated in process and high in cost, and are not suitable for the production of small-sized light-emitting diodes.
[0005] In "Luminescence Journal", Volume 30, Issue 2, "AlGaInP LED Luminous Efficiency Simulation", it is mentioned that by optimizing the electrode pattern to improve the external quantum efficiency, although the production method is simple, but for large-sized chips, the external quantum efficiency is improved. Obviously, for small-sized chips, increasing the area of ​​the opaque electrode will reduce the light-emitting area of ​​the front surface, which will inevitably reduce the luminous efficiency of small-sized chips.

Method used

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  • Manufacturing method of AlGaInP light-emitting diode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] Step 1: half-cut the AlGaInP light-emitting diode chip by contact scribing process, and the half-cut depth is 40-60um;

[0023] Step 2: Apply photoresist evenly on the back of the chip, and bake on a hot plate until the glue is dry;

[0024] Step 3: configure ammonia water corrosion solution, the ammonia water corrosion solution adopts ammonia water: hydrogen peroxide: water volume ratio is 1: 2: 1;

[0025] Step 4: Corrode the chip in the ammonia solution for 60 seconds with a flower basket;

[0026] Step 5: Rinse the chip with deionized water after corrosion;

[0027] Step 6: remove the photoresist on the back of the chip;

[0028] Step 7: Dry the chip with dry nitrogen.

[0029] sample

Brightnessmcd(20mA)

uncorroded

153.8

corrosion

158.6

[0030] Table 1: Comparison of optoelectronic performance parameters of chips

[0031] Referring to the experimental data in Table 1, the light intensity of the chip is 3.1% higher th...

Embodiment 2

[0033] Step 1: half-cut the AlGaInP light-emitting diode chip by contact scribing process, and the half-cut depth is 40-60um;

[0034] Step 2: Apply photoresist evenly on the back of the chip, and bake on a hot plate until the glue is dry;

[0035] Step 3: configure ammonia water corrosion solution, the ammonia water corrosion solution adopts ammonia water: hydrogen peroxide: water volume ratio is 1: 2: 1;

[0036] Step 4: Corrode the chip in the ammonia solution for 90 seconds with a flower basket;

[0037] Step 5: Rinse the chip with deionized water after corrosion;

[0038] Step 6: remove the photoresist on the back of the chip;

[0039] Step 7: Dry the chip with dry nitrogen.

[0040] sample

Brightnessmcd(20mA)

uncorroded

152

corrosion

165.4

[0041] Table 2: Comparison of optoelectronic performance parameters of chips

[0042] Referring to the experimental data in Table 2, the light intensity of the chip is 8.8% higher than...

Embodiment 3

[0044] Step 1: half-cut the AlGaInP light-emitting diode chip by contact scribing process, and the half-cut depth is 40-60um;

[0045] Step 2: Apply photoresist evenly on the back of the chip, and bake on a hot plate until the glue is dry;

[0046] Step 3: configure ammonia water corrosion solution, the ammonia water corrosion solution adopts ammonia water: hydrogen peroxide: water volume ratio is 1: 2: 1;

[0047] Step 4: Corrode the chip in the ammonia solution for 120 seconds with a flower basket;

[0048] Step 5: Rinse the chip with deionized water after corrosion;

[0049] Step 6: remove the photoresist on the back of the chip;

[0050] Step 7: Dry the chip with dry nitrogen.

[0051] sample

Brightnessmcd(20mA)

uncorroded

152.7

corrosion

175

[0052] Table 3: Comparison of optoelectronic performance parameters of chips

[0053] Referring to the experimental data in Table 3, the light intensity of the chip is 14.6% higher th...

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Abstract

The invention relates to a manufacturing method of an AlGaInP light-emitting diode, which comprises the following steps: completing the steps of performing epitaxial growth on an AlGaInP light-emitting diode chip and manufacturing an electrode, then increasing one-time sideetching for a chip substrate after half-cutting of the chip and before packaging, and changing the flow direction of current; optimizing the current distribution; and reducing the light absorption of the substrate and improving the light extraction efficiency of the light-emitting diode. By adopting the manufacturing method, the light intensity of the chip can be improved by about 3%-15%.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and relates to a manufacturing method of an AlGaInP light-emitting diode. technical background [0002] LED is the abbreviation of English light emitting diode (light emitting diode). Its core part is a chip composed of P-type semiconductor and N-type semiconductor, and there is a transition layer between P-type semiconductor and N-type semiconductor called P-N junction. When carriers recombine in the P-N junction of semiconductor materials, excess energy is released in the form of light, thereby converting electrical energy into light energy. [0003] As an environmentally friendly new-generation quaternary AlGaInP light-emitting diode chip, it is an energy-saving and environmentally friendly light-emitting device that can be used to replace incandescent and fluorescent lamps. Due to its good stability and reliability, it is widely used in outdoor display, lighting, etc. On the one hand...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/14
Inventor 高百卉薛蕾武胜利林晓文陈向东肖志国
Owner DALIAN MEIMING EPITAXIAL WAFER TECH
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