A high-power high-brightness light-emitting diode chip and its manufacturing method

Abstract

The invention discloses a large-power high-brightness light-emitting diode (LED) chip and a production method thereof. The large-power high-brightness LED chip comprises a metal substrate. An LED epitaxial wafer into which a photonic quasi-crystal structure is embedded is arranged above the metal substrate. Passivating protection layers are arranged on the two sides of the epitaxial wafer. A metal bonding layer, a metal reflecting layer, a current expansion and P-type ohmic contact layer, a P-type semiconductor layer, a light emitting layer, an N-type semiconductor layer into which the photonic quasi-crystal structure is embedded, and an N-type ohmic contact electrode are sequentially arranged on the epitaxial wafer from the bottom to the top. The passivating protection layers are arranged on the two sides of the epitaxial layer above the metal substrate. The invention additionally discloses a production method for the chip. The invention solves the problems of low-efficiency light extraction and ineffective heat dissipation of the LED chip at the same time, overcomes the defects of a surface photonic crystal LED structure, and provides an effective solution to the development of large-power high-brightness LEDs.

Description

technical field [0001] The invention relates to a metal substrate vertical structure embedded quasi-photonic crystal LED chip and a manufacturing method, in particular to a high-power and high-brightness light-emitting diode chip and a manufacturing method, belonging to the field of semiconductor lighting technology and nano-optoelectronic devices. Background technique [0002] High-power, high-brightness LEDs have been used in many fields such as automotive lighting, indoor and outdoor general lighting, LCD backlighting light sources, etc. With the continuous improvement of power and brightness and the continuous reduction of costs, LEDs will eventually replace the existing general-purpose The lighting source has become a new generation of green light source. But at present, LED still faces the following challenging technical problems: [0003] (1) Low luminous efficiency; [0004] (2) Low power; [0005] (3) The cost is high. [0006] This seriously affects and restric...

AI Technical Summary

Problems solved by technology

[0003] (1) Low luminous efficiency;

[0004] (2) Low power;

[0005] (3) High cost

The existing photonic crystal LED mainly forms a photonic crystal structure on the upper surface of the LED. However, the surface photonic crystal LED structure has the following problems: (1) The coupling between the photonic crystal and the low-order waveguide light is weak, and it is difficult to realize the coupling of the low-order waveguide light. (2) During the manufacturing process of surface photonic crystals, the etching process may damage the active layer and affect the light extraction efficiency; (3) Compared with the planar LED structure, the manufacture of ohmic electrodes is difficult, and the current distribution is uneven, which affects the electrical characteristic

The traditional front-mounted structure LED is the most popular in the market, with low production cost, but there are disadvantages such as poor thermal conductivity (especially the sapphire substrate structure); the flip-chip structure LED is represented by Philips Lumileds, but it does not fundamentally solve the heat dissipation of the LED , current unevenness (current congestion), life expectancy and other issues; the two electrodes of the vertically structured LED chip are on both sides of the LED epitaxial layer, and the current Almost all flow vertically through the epitaxial layer of the LED, and very little current flows laterally, which can improve the current distribution problem of the planar structure, improve the luminous efficiency, and also solve the shading problem of the P pole, and increase the light-emitting area of ​​the LED

Images