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Iii-nitride light-emitting devices with one or more resonance reflectors and reflective engineered growth templates for such devices, and methods

A technology of nitride and nitride layer, which is applied in the direction of lasers, semiconductor devices, electric solid-state devices, etc., can solve the problem of difficult commercialization and high yield of etching process

Active Publication Date: 2009-09-02
LIGHTWAVE PHOTONICS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0026] Although this approach has been shown to work, the sequence of laser lift-off and subsequent etching is difficult to commercialize and achieve high yields

Method used

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  • Iii-nitride light-emitting devices with one or more resonance reflectors and reflective engineered growth templates for such devices, and methods
  • Iii-nitride light-emitting devices with one or more resonance reflectors and reflective engineered growth templates for such devices, and methods
  • Iii-nitride light-emitting devices with one or more resonance reflectors and reflective engineered growth templates for such devices, and methods

Examples

Experimental program
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Effect test

no. 1 approach

[0093] exist Image 6 with Figure 7 The structure and energy band diagram of the first embodiment are shown in , respectively.

[0094] GEMM(604) is suitable for various forms of optical cavity semiconductor light emitters. In a first embodiment, the GEMM (604) with its highly reflective bulk properties can be grown thinner such that the GEMM (604) is partially transparent and partially reflective. The first embodiment utilizes a device-quality planar III-nitride material growth template consisting of a sapphire substrate (601), an i-GaN buffer layer (602), and an n-GaN layer (603), such that the GEMM (604) The crystal quality is planar, specular and device quality. The GEMM (604) is lattice matched to the n-GaN layer (603) so that the required thickness can be below the epitaxial critical thickness.

[0095] Once a 2μm i-GaN buffer layer (602) and a 2μm n-GaN layer (603) are grown on the sapphire substrate (601), the GEMM (604) can be grown to a specific thickness for th...

Embodiment approach

[0098] For this implementation, the following factors should be considered:

[0099] a. A planar n-type GaN layer template (603) with device quality;

[0100] b. the thickness, flatness, specular reflectivity and transparency of the GEMM layer (604) grown on the first n-type GaN layer (603);

[0101] c. The thickness of the second n-type conducting layer (605) grown on the GEMM (604) and having device quality;

[0102] d. The position of the active region (606) relative to the enclosing mirrors (604), (610);

[0103] e. the thickness of the p-type conductive layer (607) (608); and

[0104]f. Reflective properties of non-epitaxial metal contacts (610).

[0105] Although the device efficiency is superior to that of standard LEDs, it may be of interest to detune the device in its configuration such that improvements in directivity and spectral narrowing replace even higher light extraction efficiency. This can be done by keeping all parameters the same while increasing the w...

no. 2 approach

[0112] exist Figure 8 with 9 The structure and energy band diagram of the second embodiment are shown in , respectively.

[0113] GEMM(804) is suitable for various forms of optical cavity semiconductor light emitters. In a second embodiment, the GEMM (804) with its highly reflective bulk properties can be grown thick such that the GEMM (804) exhibits its bulk reflectivity. The second embodiment utilizes a device-quality planar III-nitride material growth template consisting of a sapphire substrate (801), an i-GaN buffer layer (802) and an n-GaN layer (803), such that the GEMM (804) The crystal properties of the crystals are planar, specular, and device-quality. The GEMM (804) is lattice matched to the n-GaN layer (803), so that the required thickness can be below the epitaxial critical thickness.

[0114] Once a 2 μm i-GaN buffer layer (802) and a 2 μm n-GaN layer (803) are grown on the sapphire substrate (801), the GEMM (804) can be grown to a thickness for the resonant ...

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Abstract

A light emitter includes a first mirror that is an epitaxially grown metal mirror, a second mirror, and an active region that is epitaxially grown such that the active region is positioned at or close to, at least, one antinode between the first mirror and the second mirror.

Description

[0001] This application claims the benefit of the following U.S. Provisional Patent Application under 35 U.S.C. Section 119(e): [0002] U.S. Provisional Patent Application Serial No. 60 / 835,934, filed August 6, 2006 by R.J. Jorgenson, entitled "Ill-nitride Light Emitting Devices Having One or More Resonant Reflectors and Reflection Engineered Growth Templates for Such Devices and Methods (III-NITRIDELIGHT-EMITTING DEVICES WITH ONE OR MORE RESONANCE REFLECTORS AND REFLECTIVE ENGINEERED GROWTH TEMPLATES FOR SUCH DEVICES, AND METHODS)". [0003] U.S. Provisional Patent Application Serial No. 60 / 821,588, filed August 7, 2006, by R.J. Jorgenson, entitled "Ill-nitride Light Emitting Devices Having One or More Resonant Reflectors and Reflection Engineered Growth Templates for Such Devices and Methods (III-NITRIDELIGHT-EMITTING DEVICES WITH ONE OR MORE RESONANCE REFLECTORS AND REFLECTIVE ENGINEERED GROWTH TEMPLATES FOR SUCH DEVICES, AND METHODS)". [0004] The above two provisional ap...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/15H01L33/10H01L33/46
CPCH01S5/18375H01L33/465H01L33/105
Inventor 罗比·J·乔根森
Owner LIGHTWAVE PHOTONICS INC
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