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Novel power module

A power module, a new type of technology, applied in the direction of semiconductor/solid-state device parts, semiconductor devices, electrical components, etc., can solve the problems of great differences in electrical characteristics and reliability of power modules, so as to avoid characteristic differences, improve power density, The effect of improving heat dissipation efficiency

Inactive Publication Date: 2013-04-03
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in actual operation, due to the difference in the thickness of the thermal grease and the size of the heat sink, the electrical characteristics and reliability of power modules with different heat dissipation conditions are very different.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] Embodiment 1, with reference to attached figure 1 , 2 .

[0022] Such as figure 1 As shown, the IGBT power module or MOSFET power module of the present invention includes a housing 1, a substrate 2, a substrate 3, and a chip 4, the substrate 2 is connected to a radiator, the chip 4 and the substrate 3 are connected by soldering, and the substrate 3 and the substrate 4 The housing 1 is covered on the substrate 4 through a fixed connection by soldering. The inside of the substrate 4 has a cooling channel 5 and a cooling medium inlet 6 and a cooling medium outlet 7 connected to the cooling channel 5. The cooling medium inlet 6, the cooling medium outlet 7, and the cooling channel 5 constitute a cooling medium flow circuit; the cooling medium inlet 6 and cooling medium outlet 7 are provided with an inlet valve 8 and an outlet valve 9 respectively.

[0023] Such as figure 2 As shown, the heat dissipation channels 5 are distributed inside the substrate 4 in a Z shape. ...

Embodiment 2

[0026] Embodiment 2, with reference to attached figure 1 , 3 .

[0027] Such as figure 1 As shown, the IGBT power module or MOSFET power module of the present invention includes a housing 1, a substrate 2, a substrate 3, and a chip 4, the substrate 2 is connected to a radiator, the chip 4 and the substrate 3 are connected by soldering, and the substrate 3 and the substrate 4 The housing 1 is covered on the substrate 4 through a fixed connection by soldering. The inside of the substrate 4 has a cooling channel 5 and a cooling medium inlet 6 and a cooling medium outlet 7 connected to the cooling channel 5. The cooling medium inlet 6, the cooling medium outlet 7, and the cooling channel 5 constitute a cooling medium flow circuit; the cooling medium inlet 6 and cooling medium outlet 7 are provided with an inlet valve 8 and an outlet valve 9 respectively.

[0028] Such as image 3 As shown, the heat dissipation channels 5 are distributed inside the substrate 4 in an S shape. ...

Embodiment 3

[0031] Embodiment 3, with reference to attached figure 1 , 4 .

[0032] Such as figure 1 As shown, the IGBT power module or MOSFET power module of the present invention includes a housing 1, a substrate 2, a substrate 3, and a chip 4, the substrate 2 is connected to a radiator, the chip 4 and the substrate 3 are connected by soldering, and the substrate 3 and the substrate 4 The housing 1 is covered on the substrate 4 through a fixed connection by soldering. The inside of the substrate 4 has a cooling channel 5 and a cooling medium inlet 6 and a cooling medium outlet 7 connected to the cooling channel 5. The cooling medium inlet 6, the cooling medium outlet 7, and the cooling channel 5 constitute a cooling medium flow circuit; the cooling medium inlet 6 and cooling medium outlet 7 are provided with an inlet valve 8 and an outlet valve 9 respectively.

[0033] Such as Figure 4 As shown, the heat dissipation channels 5 are distributed inside the substrate 4 in a wave shape...

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PUM

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Abstract

The invention provides a novel power module which comprises a shell, a substrate, a base plate, and a chip. The substrate is connected with a radiator. The chip is fixedly connected with the base plate. The base plate is fixedly connected with the substrate. The power module is provided with a coolant flow loop inside. The coolant flow loop comprises a radiating passage, a coolant inlet, and a coolant outlet. The radiating passage, the coolant inlet and the coolant outlet are arranged inside the substrate and are integrated with the substrate. The radiator of the power module is integrated to the bottom, radiating is achieved by water cooling, the inside of the power module is directly cooled, various radiating intermediate media are avoided, property difference caused by the use of different radiators can be avoided, radiating efficiency is improved, and stable operation of the power module is guaranteed.

Description

technical field [0001] The present invention relates to power modules. Background technique [0002] Power modules based on insulated gate bipolar transistors and metal oxide field effect transistors have the characteristics of high output power and high heat generation. It is necessary to cool them to ensure their reliable operation. The heat dissipation condition of the module plays a vital role in the characteristics of the module. Conventional natural cooling has low efficiency, while forced air cooling and water cooling require additional devices and are expensive. At present, the improvement of the heat dissipation capability of the power module mainly starts with changing the material type of the module and changing the thickness of each layer of the module, and there are few changes to the structure of the module itself. At the same time, the design of a module is often kept quite separate from its use. [0003] For conventional power device modules, the heat dissi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/473
CPCH01L2924/1305H01L2924/13055H01L2924/13091H01L2924/181H01L2224/48091H01L2224/48137H01L2224/48227H01L2224/48472H01L2924/00014H01L2924/00H01L2924/00012
Inventor 陈思哲盛况汪涛郭清谢刚
Owner ZHEJIANG UNIV
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