20results about How to "Reduce crosstalk effects" patented technology

The invention relates to the field of semiconductor device design and manufacturing, and discloses a method for growing a second-class superlattice infrared detector based on MBE. A buffer layer disposed over the semiconductor substrate; the N-type lower electrode contact layer is positioned above the buffer layer; the medium-wave infrared absorption layer is positioned above the N-type lower electrode contact layer; the electron barrier layer is positioned above the medium-wave infrared absorption layer; the short-wave infrared absorption layer is positioned above the electron barrier layer; the N-type upper electrode contact layer is positioned above the short wave infrared absorption layer; the Cap layer is located above the N-type upper electrode contact layer; an upper electrode of the electrode layer is positioned above the Cap layer; the lower electrode is connected with the N-type lower electrode contact layer; and the passivation layer covers the side wall of the detector. Different absorption layers are separated by adopting the electron barrier layer, and the crosstalk effect between different wave bands is reduced, so that the false alarm rate of the detector in a complex environment is reduced, and the detector can still keep high precision in a high-interference environment due to the characteristic.

The utility model relates to the technical field of channel management equipment, and provides a signal emission assembly and a gate machine, the signal emission assembly is applied to the gate machine, the signal emission assembly comprises at least one emission lamp, the emission lamp is suitable for being installed on an installation panel of the gate machine, and the installation panel is provided with a plurality of light outlet holes in an array mode. The emission lamps and the light outlet holes are arranged in a one-to-one correspondence mode, and each emission lamp adopts a VCSEL semiconductor laser. According to the signal transmitting assembly provided by the embodiment of the utility model, the VCSEL semiconductor laser vertically transmits the high-power optical laser beam from the top surface, the light emitting angle of the emergent light is smaller, the quantity of the emergent light which is collimated and emitted is large, and the width and the intensity of the auxiliary light spots of the output light spots are smaller; the problem of crosstalk between adjacent receiving ends can be reduced, and the accuracy of gate detection is improved.

The invention discloses an anti-digital IO flip noise circuit, which relates to the field of integrated circuit design, and comprises a first power supply noise sensitive circuit, a second power supply noise sensitive circuit, a first isolation unit I1, a second isolation unit I2, a first digital IO output driving circuit and a second digital IO output driving circuit, the first power supply noise sensitive circuit is connected with the first digital IO output driving circuit through a first isolation unit I1; and the second power supply noise sensitive circuit is connected with the first digital IO output driving circuit through a second isolation unit I2. According to the invention, the isolation unit is inserted between the last-stage output inverter of the sensitive circuit power domain and the output driving inverter of the digital IO driving power domain, so that the problem of crosstalk of switching noise generated on a power supply / the ground when a plurality of IOs of a chip are turned over at the same time to a digital signal normally output by the IOs is effectively reduced.

A display driving device includes a pixel column grayscale characteristic value calculation unit, a pixel crosstalk compensation unit and a driving unit. The pixel column grayscale characteristic value calculation unit calculates a pixel column grayscale characteristic value of each pixel column of a display frame, wherein the pixel column grayscale characteristic value is the sum of the pixel grayscale characteristic values ​​of all display pixels of the corresponding pixel column; the pixel crosstalk compensation unit compensates each display pixel of the corresponding pixel column with a pixel compensation value of each pixel column, wherein the pixel compensation value of each pixel column is generated based on the comparison of the pixel column grayscale characteristic value of the pixel column with a preset plurality of pixel column grayscale characteristic thresholds; and the driving unit drives the display panel with the compensated display pixels of the display frame.

The invention discloses an array testing device for multiple new principle device arrays, which comprises an array testing mainboard, a semiconductor parameter analyzer and an upper computer, and is characterized in that the array testing mainboard comprises a microcontroller and a plurality of matrix switch board cards, and each matrix switch board card comprises a shift register and a relay group array; wherein the common end of the relay group is connected with an array to be tested, and the contact end is an SMU end connected with a semiconductor parameter analyzer, a Float end without electrical connection, and a Vref end and a GND end connected with an external source meter; the microcontroller receives a communication instruction of an upper computer and sends control signals to the shift registers on the matrix switch board cards in series, and the shift registers output control signals to the control ports of the relay sets on the matrix switch board cards in parallel. And the semiconductor parameter analyzer can test devices on the array to be tested through switching of the relay group. The device provided by the invention has expandability, can efficiently measure various types of new principle device arrays, reduces the influence of various types of noise on to-be-measured signals and the influence of crosstalk, and improves the test precision.

This invention provides a method and apparatus for compressing and encrypting snapshots of multiple 3D color objects based on spatial division multiplexing. The method includes: generating an object beam and a reference beam based on a three-primary-color laser source, and generating multiple composite three-color parallel beams based on the object beam; illuminating each 3D color object and a random phase mask connected to each 3D color object with the multiple composite three-color parallel beams, respectively, and calculating the light field distribution of each 3D color object on the corresponding random phase mask plane; encrypting the light field distribution using each random phase mask, and generating an object light field on a detector plane based on the encrypted light field distribution; and generating an encrypted color hologram of multiple 3D color objects by interfering with the reference beam on the detector plane through the object light field and the reference beam. This method can significantly reduce the crosstalk effect during decoding of different encrypted objects, greatly reduce the leakage of object information, and significantly improve security.

The present invention discloses a two-dimensional force measurement sensor and a measurement method, wherein the two-dimensional force measurement sensor comprises a force measuring base, a force bearing member and at least two component force measurement structures, wherein the force bearing member is used to bear the two-dimensional force to be measured in a force measuring surface or parallel to the force measuring surface, each component force measurement structure has two connecting parts, one of which is arranged on the force bearing member, and the other is arranged on the force measuring base, wherein a first force measuring direction is formed between the two connecting parts of one of the force component measurement structures for measuring a first unidirectional force value, and a second force measuring direction is formed between the two connecting parts of the other force component measurement structure for measuring a second unidirectional force value and forming an angle with the first force measuring direction. The two-dimensional force to be measured is synthesized according to the first force measuring direction, the first unidirectional force value, the second force measuring direction and the second unidirectional force value, thereby reducing the influence of inter-dimensional crosstalk, improving the measurement accuracy, and facilitating rapid acquisition of the two-dimensional force in the force measuring surface.

The utility model discloses a receiver of a dTOF module, and relates to the technical field of distance measurement. According to the receiver, the light absorption part is arranged between the receiver shell and the detector, is located in the area outside the opening and is used for absorbing the reflected light, so that the reflected light cannot be reflected by the optical filter or reflected by the receiver shell to return to the detector again, the influence of a crosstalk phenomenon is avoided as much as possible, and the distance measurement accuracy is improved; secondly, as the light reflected by the target object enters the detector through the small hole, correspondingly, the area of an optical filter which can cause secondary reflection is reduced, so that the crosstalk effect caused by the optical filter is relatively reduced, and the accuracy of distance measurement is improved; and thirdly, the size of the opening in the receiver shell provided with the opening is determined according to the requirement of the pinhole imaging principle, so that the signal light can be clearly imaged into a detector pixel through pinhole imaging, a lens element for imaging is not needed in the receiver, and the size and complexity of the system are reduced.

The invention provides a through-type three-dimensional quasi-hemispherical electrode detector based on an SOI substrate, and the detector comprises a cubic substrate, the center of the upper surface of the substrate is a central electrode; an anode aluminum electrode contact layer covers the upper surface of the central anode; an upper surface SiO2 layer covers the part, which is not covered with the anode aluminum electrode contact layer, of the upper surface of the substrate; the SOI substrate heavily doped layer is arranged at the bottom of the base body, and the substrate is arranged at the lower part of the SOI substrate heavily doped layer; a middle SiO2 layer is arranged between the SOI substrate heavily doped layer and the substrate; grooves between the four side faces of the base bodies and the adjacent base bodies form groove walls. The heavily doped layer of the SOI substrate and the groove wall form a cathode; a cathode aluminum electrode contact layer covers the surface of the groove between the adjacent substrates; and the bottom surface SiO2 layer covers the bottom surface of the substrate. The problem that a low electric field region and a zero electric field region exist in an unetched region in the prior art is solved, meanwhile, the charge collection performance is improved, and the effective size of the detector is increased.

The utility model provides an in-memory computing array, an in-memory computing macro circuit and in-memory computing equipment, and the in-memory computing array comprises a memory unit group which can store data for computing; a calculation unit for performing a calculation operation; a latch capable of storing data read from the memory cell group; the global bit line switch is connected between a global bit line and the memory unit group, the global bit line can realize data interaction between the in-memory computing array and the outside, and the global bit line switch is configured to be switched off in response to a computing operation instruction, and the global bit line switch is configured to be switched off in response to the computing operation instruction. And reading data from the memory unit group to the latch for executing calculation operation, and closing the latch after the latch finishes data latching, so that the memory unit group reads / writes data through the global bit line, and the calculation operation and the read-write operation are parallel.

The embodiment of the invention relates to the technical field of connectors, and particularly discloses a high-speed backboard connector which comprises a female end connector and a male end connector which are used in a butt joint mode. The female end connector comprises a first signal contact and a second signal contact, and the first signal contact extends along a second direction; the second signal contact comprises a first signal body and a first signal convex part; the male end connector comprises a base, a third signal contact and a fourth signal contact, the third signal contact is arranged on the base and extends in the second direction, and the fourth signal contact comprises a second signal body and a second signal convex part; wherein the first signal contact is electrically connected with the second signal convex part, and the first signal convex part is electrically connected with the third signal contact. According to the high-speed backboard connector, the crosstalk influence of differential signal transmission is reduced, the signal quality is improved, the stability of signal transmission of the high-speed backboard connector can be ensured, and the signal transmission performance of the high-speed backboard connector is improved.

The invention discloses a GaN-based vertical micro-cavity Micro-LED based on electroplating technology and a preparation method thereof. The micro-cavity Micro-LED of the invention has a narrow half-height width of light emission and good light emission directionality. By thinning the chip thickness and using the metal reflector of the p-GaN layer (5) and the dielectric film reflector of the n-GaN layer as the end face of the resonant cavity, a vertical resonant micro-cavity structure is formed, which will suppress the light emission from the side wall and improve the directionality of the front light emission, thereby reducing the crosstalk effect between adjacent pixels of the Micro-LED display. At the same time, the resonant micro-cavity structure will select a specific wavelength to narrow its light emission spectrum and increase the spectral purity, which will be beneficial to improving the threshold of the Micro-LED display. The vertical structure Micro-LED of the invention has a large active area and less light absorption by n-GaN; the current expansion is good, the voltage is low, the current density is small, and it has advantages in light efficiency, saturation current, and long-term reliability; secondly, the Cu substrate has good electrical conductivity and thermal conductivity, and the chip thermal resistance is small.

The invention provides a wiring channel determination method and system, a chip, electronic equipment, a storage medium and a computer program product, relates to the field of data processing, and is applied to the system. The method comprises the steps that crosstalk parameters of all wiring channels are determined according to received output signals sent by all output interfaces of a first chip unit to a second chip unit and actual input signals obtained after the output signals pass through the wiring channels corresponding to the output interfaces in sequence, and the crosstalk parameters represent the crosstalk influence degree borne by the wiring channels; and determining a connection relationship between each output interface and the plurality of wiring channels according to the crosstalk parameter of each wiring channel and the performance requirement parameter of the output interface corresponding to each wiring channel.

The application discloses a high-speed data transmission method and device based on a silicon photon chip and a medium, relates to the technical field of data transmission, and comprises the following steps: a plurality of wavelength mode physical channels are constructed by utilizing a micro comb light source, a wavelength demultiplexing structure and a double-mode waveguide on a silicon photon chip; a training sequence is sent under default transmission of a programmable interference network, channel gain and noise are estimated to obtain state information; the number of virtual channels is determined and combination parameters are calculated according to the state information; virtual-real channel mapping is established, and on-chip optical path configuration is completed; a service forward error correction code is encoded on the sending side, and a multidimensional optical signal is generated by cross-virtual channel bit interleaving in the encoding block; after demultiplexing and equalization, the signal is transformed to a virtual channel domain on the receiving side, soft decision demodulation and error correction decoding are performed, a quality index is calculated, and channel state is updated; and linear combination parameter matrix and modulation parameters are further jointly optimized to realize low-error and high-throughput adaptive transmission under a dynamic link.

The utility model embodiment provides a kind of adapter circuit board. Among them, the adapter circuit board includes: first group interface, each interface in first group interface is set to be connected with the radio frequency connector of first type;Second group interface, each interface in second group interface is set to be connected with the radio frequency connector of second type;Printed circuit board, printed circuit board includes one or more layers of board;A group of microstrip lines;Wherein, in the case that there are multiple microstrip lines in a group of microstrip lines on the same layer of board in printed circuit board, the distance between two adjacent microstrip lines transmitting radio frequency signals of the same frequency in multiple microstrip lines is greater than the distance between two adjacent microstrip lines transmitting radio frequency signals of different frequencies. Through the utility model, in the case of multiple signal paths, at least the technical problem that the transmitted signal is severely interfered in the related art is solved.

The utility model discloses a C-band high-power airborne power amplifier, and belongs to the field of microwave communication. The circuit comprises a radio frequency amplification circuit, a power supply circuit, a detection circuit, a state return circuit, a negative voltage protection circuit and a working / silence circuit. The radio frequency amplification circuit is used for amplifying the power of a radio frequency signal, the power supply circuit is used for supplying power to the radio frequency amplification circuit, the state return circuit and the negative voltage protection circuit, the detection circuit is used for converting a detection signal into a detection voltage, and the state return circuit is used for comparing the detection voltage with a reference voltage and outputting a state return signal; the working / silence circuit receives an external control signal and controls the working / silence state of the power supply circuit, and the negative voltage protection circuit ensures that the power supply circuit outputs negative voltage. The utility model has the advantages of high output power, small volume and weight, good heat dissipation and good electromagnetic compatibility, and can adapt to various complex natural environments.

This utility model relates to the field of mechanical metrology technology, specifically a metrology auxiliary device for a multi-component force sensor. It includes an upper fixture and a lower fixture. One end of the upper fixture is connected to the lower fixture, and the other end is suspended, with a gap between them. Both the upper and lower fixtures contain recesses whose inner walls match the shape of the sensor to be tested. The sensor is placed in the upper and lower fixtures through the recesses. The upper fixture includes an X-axis force plate and a Y-axis force plate, and the lower fixture includes a Z-axis force plate. The X-axis and Y-axis force plates each have a blind hole one and a blind hole two, respectively, while the Z-axis force plate has a blind hole three and a blind hole four. All four blind holes are connected to steel balls. This utility model ensures that the force direction of the sensor is consistent with the design direction during metrology, improving calibration reliability and solving the problem in the prior art that multi-component force sensors cannot be stably installed and calibrated directly in force standard machines.

The embodiment of the invention relates to the field of semiconductors, and provides an information processing device, which comprises a main connection structure, a second connection structure, a third connection structure and a fourth connection structure, the storage module is located on one side of the first surface, and at least one surface of the storage module is provided with a plurality of chips; the external connection structure is located on one side of the first surface and is configured to be electrically connected with the storage module and the information processing chip, and the information processing chip is configured to read and write data to each chip only through the external connection structure; the first supporting heat dissipation part is located on the first surface and arranged between the storage module and the main connecting structure. According to the information processing device provided by the embodiment of the invention, the number of wiring layers of the main connection structure can be reduced through the external connection structure, and the heat dissipation effect of the information processing device can be improved through the first supporting heat dissipation part.

The present invention relates to a two-step method for inverting anisotropic parameters of VTI media, which belongs to the field of seismic velocity modeling. Vp , Vs. , r The gradients of the three model parameters are optimized using the conjugate gradient optimization algorithm and then brought into iterative inversion to obtain Vp , Vs. , r Three model parameters. Vp , Vs. , r These three model parameters are used as the real model parameters, and only e and d Get their gradients, and then use the Adam gradient algorithm to optimize their gradients and bring them into iterative inversion until the accuracy requirements are met, and finally get e and d The method of the present invention reduces the crosstalk effect of simultaneous inversion of multiple parameters, and selects different gradient optimization algorithms according to the characteristics of the parameters during the inversion process, thereby improving the accuracy of gradient optimization in a targeted manner and significantly improving the effect of full waveform inversion of anisotropic parameters of VTI media.

The utility model relates to a high-speed cable connector structure for improving crosstalk, which comprises a PCBA (printed circuit board assembly) arranged in a shell, a plurality of bonding pad groups arranged on the PCBA and signal lines arranged corresponding to the bonding pad groups, each bonding pad group comprises a signal bonding pad and a shielding ground bonding pad, a signal conductor and an aluminum foil are exposed at the front end of each signal line, the signal conductor is welded and fixed with the signal bonding pad, and the shielding ground bonding pad is welded and fixed with the signal bonding pad. The printed circuit board is characterized in that UV insulating blocks wrapping the corresponding signal bonding pads and the signal conductors are formed at the front ends of the signal lines on the PCBA through glue dispensing or forming, the UV insulating blocks are covered with conductive layers through glue dispensing or forming, and the conductive layers are used for conducting the corresponding shielding ground bonding pads and the aluminum foil to form a complete shielding layer. According to the utility model, the signal crosstalk between the signal lines can be further reduced, the manufacture is convenient, and the compatibility with PCBAs of various specifications is better.