LIGBT with carrier storage region

A technology of carrier storage and drift region, applied in LIGBT. It can solve the problem of long turn-off time of LIGBT, and achieve the effect of shortening the turn-off time and life.

Pending Publication Date: 2020-02-18
ADVANCED SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when the LIGBT is turned off, because a large number of minority carriers (m

Method used

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  • LIGBT with carrier storage region
  • LIGBT with carrier storage region

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0024] Example 1

[0025] This embodiment provides a LIGBT with a carrier storage area, figure 1 The schematic diagram of the structure of this embodiment is shown. See figure 1 , The LIGBT of this embodiment includes, from bottom to top, a substrate 1, a buried oxide layer 2, an N-type drift region 3, a P well 4 located at one end of the N-type drift region 3, and an N-type heavily doped above the P well 4. Region 5, emitter 6 located above P-well 4 and N-type heavily doped region 5, gate dielectric layer 7 located above P-well 4, gate 8 located above gate dielectric layer 7, and N-type drift region 3 An N-type buffer area 9 at one end, a P-type heavily doped region 10 located above the N-type buffer area 9, and a collector 11 located above the P-type heavily doped region 10.

[0026] Wherein, the N-type drift region 3 includes an N-type silicon strip 12 parallel to the channel length direction of the LIGBT. The N-type silicon strip 12 includes a carrier storage region 13, and th...

Example Embodiment

[0032] Example 2

[0033] The LIGBT with a carrier storage region provided in this embodiment is a further improvement to Embodiment 1. In this embodiment, the P-well 4 of the LIGBT can be through but not limited to ion implantation, diffusion, evaporation, and sputtering. The doped aluminum ion and / or gallium ion, wherein the concentration and depth of the aluminum ion and / or gallium ion doping can be customized according to the actual application.

[0034] In this embodiment, the P-well 4 can also be doped with boron ions through, but not limited to, ion implantation, diffusion, evaporation, and sputtering.

[0035] In this embodiment, due to the large diffusion coefficients of aluminum and gallium, the low diffusion temperature, and the fast diffusion speed, the PN junction formed by them is a gradual junction rather than an abrupt junction, so that the breakdown voltage is relatively high. Higher reliability.

Example Embodiment

[0036] Example 3

[0037] The LIGBT with a carrier storage region provided in this embodiment is a further improvement of the first embodiment. figure 2 The schematic diagram of the structure of this embodiment is shown. See figure 2 The improvement of this embodiment over Embodiment 1 is that the N-type drift region 3 of the LIGBT of this embodiment also includes P-type silicon strips 14 parallel to the channel length direction of the LIGBT and spaced from the N-type silicon strips 12, forming A super junction LIGBT. Among them, the number of P-type silicon strips 14 can be customized according to actual applications.

[0038] The N-type drift region of the super-junction LIGBT of this embodiment includes an N-type silicon strip, and the N-type silicon strip includes a carrier storage region doped with hydrogen ions, so that the carrier storage region can be expressed as holes The barrier layer can reduce the saturation voltage drop Vcesat when the super-junction LIGBT is tu...

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Abstract

The invention discloses a LIGBT with a carrier storage region. The LIGBT comprises an N-type drift region. The N-type drift region comprises an N-type silicon strip. The N-type silicon strip includesthe carrier storage region. The carrier storage region is doped with hydrogen ions. The N-type drift region of the LIGBT comprises the N-type silicon strip, and the N-type silicon strip includes the carrier storage region doped with hydrogen ions so that the carrier storage region can be represented as a hole barrier layer and can reduce the saturation voltage drop Vcesat when the LIGBT is forwardturned on and can also be represented as a composite center and and can shorten the lifetime of minority carriers when the LIGBT is turned off, thus shortening the turn-off time.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a LIGBT with a carrier storage area. Background technique [0002] LIGBT (Lateral Insulated Gate Bipolar Transistor, lateral insulated gate bipolar transistor) combines BJT (Bipolar Junction Transistor, bipolar transistor) and lateral power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor, metal oxide half field-effect transistor ) advantages, as well as the advantages of high input impedance and low conduction voltage drop, are widely used in various power integrated circuit fields. [0003] When the LIGBT is turned on, due to the conductance modulation effect in its drift region, a lower saturation voltage drop can be obtained. However, when the LIGBT is turned off, since a large number of minority carriers (minority carriers) are stored in its drift region, the LIGBT turns off for a long time. Contents of the invention [0004] The technical problem to be s...

Claims

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Application Information

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IPC IPC(8): H01L29/739H01L29/06
CPCH01L29/7393H01L29/0619H01L29/0623H01L29/0634
Inventor 王学良刘建华郎金荣闵亚能
Owner ADVANCED SEMICON MFG CO LTD
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