Suspended collector pnp integrated circuit transistor and method of making the same

Abstract

The invention relates to a suspension collector PNP integrated circuit transistor and a manufacturing method thereof. An N-type first epitaxial layer and an N-type second epitaxial layer are sequentially formed on a P-type substrate; an N-type buried layer is arranged in the P-type substrate, a collector P-type buried layer is arranged in the first epitaxial layer which is positioned on the N-type buried layer, and a collector upper isolation unit is arranged in the second epitaxial layer which is positioned on the collector P-type buried layer; a P-type lower isolation unit is arranged in the first epitaxial layer which is positioned on the upper portion of the periphery of the N-type buried layer, and a P-type upper isolation unit is arranged in the second epitaxial layer which is positioned on the P-type lower isolation unit; a first P+ diffusion region is arranged in the P-type upper isolation unit, and serves as a collector; an N+ diffusion region is arranged in the second epitaxial layer enclosed by the collector upper isolation unit and the collector P-type buried layer, and serves as a base; and a second P+ diffusion region is arranged in the second epitaxial layer enclosed by the N+ diffusion region, and serves as an emitter. The suspension collector PNP integrated circuit transistor and the manufacturing method thereof can reduce collector series resistance and saturation voltage drop, and increase current output capacity.

Description

technical field [0001] The invention relates to semiconductor technology, in particular to a floating collector PNP integrated circuit transistor and a manufacturing method thereof. Background technique [0002] In conventional bipolar integrated circuit design, PNP tubes are generally divided into two categories: horizontal PNP tubes (ie LPNP tubes) and vertical PNP tubes (ie VPNP tubes), and vertical PNP tubes can be divided into two types: substrate set Electrode PNP tube (ie SPNP tube) and floating collector PNP tube (ie FPNP tube). These three PNP tubes have their own characteristics: [0003] LPNP tubes are widely used, and its production can be carried out at the same time as ordinary NPN tubes without any additional process; but there are disadvantages such as low current gain, poor high-current characteristics, and poor frequency characteristics; [0004] The large current characteristics and frequency characteristics of the SPNP tube are better than those of the ...

AI Technical Summary

Problems solved by technology

This method is simple to implement and does not need to add additional photolithography layers; but the biggest disadvantage is that the P buried concentration is light and the thickness is thin, which leads to large collector series resistance and saturation voltage drop of the FPNP tube, which greatly affects the high current output. ability

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