A BCD semiconductor device and a method for manufacture the same are provided, the BCD semiconductor device includes a first high voltage nLIGBT device, a second high voltage nLIGBT device, a first high voltage nLDMOS device, a second high voltage nLDMOS device, a third high voltage nLDMOS device, a first high voltage pLDMOS device, a Low Voltage NMOS Devices, a Low Voltage PMOS Devices, a PNP device and a diode device which are integrated on the same chip, wherein the High Voltage nLIGBT Device, the High Voltage nLDMOS Device, the High voltage pLDMOS device are dielectric isolated so as toa achieve complete isolation of high and low voltage devices. A nLIGBT, nLDMOS, Low Voltage NMOS, low voltage PMOS and low voltage NPN are are monolithically integrated on a substrate, The isolation region composed of dielectric, buried layer of second conductivity type, dielectric groove and injection region of first conductivity type realizes high and low voltage all-dielectric isolation on integrated chip, avoiding high and low voltage crosstalk problem. The multi-channel design is adopted in six types of high voltage tubes, which can effectively increase the current output capability of highvoltage tubes.