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State observation based IGBT turn-off voltage peak inhibition system and control method

A technology of turn-off voltage and state observation, applied in electrical components, output power conversion devices, etc., can solve problems such as IGBT overvoltage failure, and achieve the effect of suppressing voltage spikes, reducing system volume, and reducing turn-off loss

Active Publication Date: 2019-05-07
ZHEJIANG UNIVERSITY OF SCIENCE AND TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The IGBT in the converter usually needs to be connected to the DC side capacitor to form the corresponding converter topology, and there is a parasitic inductance Ls on the connection circuit. When the IGBT is turned off, the current change rate (di / dt) will be very large. The connection circuit When the parasitic inductance passes through the current with a large rate of change, an induced voltage △V will be generated, which is related to the DC bus voltage (V dc ) together on the IGBT, it is easy to cause IGBT overvoltage failure

Method used

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  • State observation based IGBT turn-off voltage peak inhibition system and control method
  • State observation based IGBT turn-off voltage peak inhibition system and control method
  • State observation based IGBT turn-off voltage peak inhibition system and control method

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] Embodiment 1: A suppression system of IGBT turn-off voltage spike based on state observation, as attached figure 1 shown, including 8 IGBT modules, also includes

[0033] The bus voltage acquisition unit 3 is connected to the bus of the IGBT module 8, and is used to collect the bus voltage V of the IGBT module 8 in the switching period. dc ;

[0034] The output current collection unit 4 is connected to the output terminal of the IGBT module 8, and is used to collect the output current value I of the IGBT module 8 in the switching cycle. c ;

[0035]The control board 1 has a built-in controller 6, the input end of the control board 1 is connected to the bus voltage acquisition unit 3 and the output current acquisition unit 4, and the output end of the control board 1 is connected to the multi-stage shutdown circuit 7; for receiving The voltage signal of the bus voltage acquisition unit 3 and the current signal of the output current acquisition unit 4, output correspon...

Embodiment 2

[0038] Embodiment 2: The control method of the suppression system of the IGBT turn-off voltage spike based on state observation: comprises the following steps:

[0039] S1. Through the controller, the bus voltage value V of the IGBT module in the switching cycle dc and the output current value I c to read;

[0040] S2. The bus voltage value V of the read IGBT module in the switching cycle dc and the output current value I c Perform analysis to obtain the shutdown control command, and output the shutdown control command to the driver board;

[0041] S3. The multi-level turn-off circuit increases the first-level voltage V on the gate signal of the IGBT module during the turn-off process of the IGBT module. m , the duration is tm_off; the driver board adjusts the voltage V of the multi-level shutdown circuit according to the received shutdown control command m The duration of tm_off;

[0042] S4. The turn-off process of the gate voltage of the IGBT module is changed by the ...

Embodiment 3

[0043] Embodiment 3: The control method of the suppression system of the IGBT turn-off voltage spike based on state observation: comprise the following steps:

[0044] S1. The controller reads the bus voltage value Vdc and the output current value Ic within the switching period of each IGBT module. Such as figure 1 As shown, the controller 6 in step S1 is installed on the control board 1, and the digital-to-analog conversion unit 5 is also provided on the control board 1, and the input end of the analog-to-digital conversion unit 5 is connected with the bus voltage sampling unit 3 and the output current The sampling unit 4, the output end of the analog-to-digital conversion unit 5 is connected to the signal input end of the controller 6, the control output end of the controller 6 is connected to the multi-stage shutdown circuit 7 on the driver board 2, and the multi-stage shutdown circuit 7 An IGBT module 8 is connected to the output end, and both the bus voltage sampling uni...

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Abstract

The invention discloses a state observation based IGBT turn-off voltage peak inhibition system and control method. The method comprises the following steps that a controller reads a bus voltage valueVdc and an output current value Ic of an IGBT module within a switching period; the read bus voltage value Vdc and the output current value Ic of an IGBT module within the switching period are analyzed, and a turn-off control instruction is output to a drive board; a multi-level turn-off circuit adds one level of voltage to a gate electrode signal of the IGBT module in the turn-off process, and the drive board adjusts the duration of a voltage Vm of the multi-level turn-off circuit according to the received turn-off control instruction; and the turn-off voltage peak of the IGBT module inhibited via the process in which the multi-level turn-off circuit changes the gate electrode of the IGBT module. According to the IGBT state after observation, the multi-level turn-off circuit is adjusted,the inhibition effect of the IGBT turn-off voltage peak is improved, and the total turn-off delay time and total turn-off loss of the IGBT are reduced effectively.

Description

technical field [0001] The invention relates to the field of suppression of IGBT turn-off voltage spikes, in particular to a state observation-based IGBT turn-off voltage spike suppression system and control method. Background technique [0002] With the rapid development of the new energy industry, power electronic converters are more and more widely used in society, and the demand for IGBT (insulated gate bipolar transistor), which is the core of power electronic converters, is increasingly strong. The IGBT in the converter usually needs to be connected to the DC side capacitor to form the corresponding converter topology, and there is a parasitic inductance Ls on the connection circuit. When the IGBT is turned off, the current change rate (di / dt) will be very large. The connection circuit When the parasitic inductance passes through the current with a large rate of change, an induced voltage △V will be generated, which is related to the DC bus voltage (V dc ) are added t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02M1/32
Inventor 陈晓
Owner ZHEJIANG UNIVERSITY OF SCIENCE AND TECHNOLOGY
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