A BCD semiconductor device and a method for manufacture the same

Abstract

A BCD semiconductor device and a method for manufacture the same are provided, the BCD semiconductor device includes a first high voltage nLIGBT device, a second high voltage nLIGBT device, a first high voltage nLDMOS device, a second high voltage nLDMOS device, a third high voltage nLDMOS device, a first high voltage pLDMOS device, a Low Voltage NMOS Devices, a Low Voltage PMOS Devices, a PNP device and a diode device which are integrated on the same chip, wherein the High Voltage nLIGBT Device, the High Voltage nLDMOS Device, the High voltage pLDMOS device are dielectric isolated so as toa achieve complete isolation of high and low voltage devices. A nLIGBT, nLDMOS, Low Voltage NMOS, low voltage PMOS and low voltage NPN are are monolithically integrated on a substrate, The isolation region composed of dielectric, buried layer of second conductivity type, dielectric groove and injection region of first conductivity type realizes high and low voltage all-dielectric isolation on integrated chip, avoiding high and low voltage crosstalk problem. The multi-channel design is adopted in six types of high voltage tubes, which can effectively increase the current output capability of highvoltage tubes.

Description

technical field [0001] The invention belongs to the technical field of semiconductor power devices, and relates to a BCD (Bipolar CMOS DMOS) device and a manufacturing method thereof. Background technique [0002] High-voltage power integrated circuits often use the high analog precision of Bipolar transistors, the high integration of CMOS, and the high power or voltage characteristics of DMOS (Double-diffused MOSFET) to integrate Bipolar analog circuits, CMOS logic circuits, CMOS analog circuits and DMOS high-voltage power devices. Monolithically integrated together (referred to as BCD process). Lateral high-voltage devices are widely used in high-voltage power integrated circuits because the drain, gate, and source are all on the chip surface, and are easy to integrate with low-voltage signal circuits through internal connections. In a general power integrated chip, a high-voltage LDMOS device (Lateral Double-diffused MOSFET) is used as the output stage, but under a simpl...

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Problems solved by technology

In a general power integrated chip, a high-voltage LDMOS device (Lateral Double-diffused MOSFET) is used as the output stage, but under a simple one-dimensional analysis, the specific on-resistance (Specificon-resistance, R on,sp ) and device breakdown voltage (Breakdown Voltage, BV) exist R on,sp ∝BV 2.3～2.6 The relationship between the device makes the on-resistance rise sharply when the device is applied at high voltage, which limits the application of lateral high-voltage DMOS devices in high-voltage power integrated circuits, especially in circuits that require low conduction loss and small chip area

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