A kind of bcd semiconductor device and its manufacturing method

Abstract

The invention provides a BCD semiconductor device and a manufacturing method thereof, comprising a first high-voltage nLIGBT device, a second high-voltage nLIGBT device, a first high-voltage nLDMOS device, a second high-voltage nLDMOS device, a third high-voltage nLDMOS device, The first high-voltage pLDMOS device, low-voltage NMOS device, low-voltage PMOS device, PNP device and diode device, high-voltage nLIGBT device, high-voltage nLDMOS device, and high-voltage pLDMOS device all adopt dielectric isolation to realize complete isolation of high-voltage and low-voltage devices. The invention is implemented on a substrate Monolithic integration of nLIGBT, nLDMOS, low-voltage NMOS, low-voltage PMOS and low-voltage NPN, the isolation area composed of dielectric, second conductivity type buried layer, dielectric groove and first conductivity type injection region realizes high and low voltage full dielectric isolation on the integrated chip , to avoid the high-voltage and low-voltage crosstalk problem, the multi-channel design is adopted in the six types of high-voltage tubes, which can effectively increase the current output capacity of the high-voltage tubes.

Description

technical field [0001] The invention belongs to the technical field of semiconductor power devices, and relates to a BCD (Bipolar CMOS DMOS) device and a manufacturing method thereof. Background technique [0002] High-voltage power integrated circuits often use the high analog precision of Bipolar transistors, the high integration of CMOS, and the high power or voltage characteristics of DMOS (Double-diffused MOSFET) to integrate Bipolar analog circuits, CMOS logic circuits, CMOS analog circuits and DMOS high-voltage power devices. Monolithically integrated together (referred to as BCD process). Lateral high-voltage devices are widely used in high-voltage power integrated circuits because the drain, gate, and source are all on the chip surface, and are easy to integrate with low-voltage signal circuits through internal connections. In a general power integrated chip, a high-voltage LDMOS device (Lateral Double-diffused MOSFET) is used as the output stage, but under a simpl...

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Problems solved by technology

In a general power integrated chip, a high-voltage LDMOS device (Lateral Double-diffused MOSFET) is used as the output stage, but under a simple one-dimensional analysis, the specific on-resistance (Specificon-resistance, R on,sp ) and device breakdown voltage (Breakdown Voltage, BV) exist R on,sp ∝BV 2.3～2.6 The relationship between the device makes the on-resistance rise sharply when the device is applied at high voltage, which limits the application of lateral high-voltage DMOS devices in high-voltage power integrated circuits, especially in circuits that require low conduction loss and small chip area

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