IGBT (Insulated Gate Bipolar Transistor) device with field stop buffer layer and manufacture method of IGBT device

Abstract

The invention provides a field stop buffer layer which is formed in an IGBT (Insulated Gate Bipolar Transistor) device. The field stop buffer layer comprises an N type substrate and a P type buried layer formed in the N type substrate. The invention also provides an IGBT device with the field stop buffer region. The IGBT device comprises the field stop buffer layer, an N-epitaxial layer, an IGBT front structure, an anode cavity emission region and a back anode collector electrode, wherein the field stop buffer layer comprises the N type substrate and the P type buried layer formed in the N type substrate; the N-epitaxial layer is formed on the surface of the N type substrate; the IGBT front structure is formed on the surface of the N-epitaxial layer; the anode cavity emission region is formed on the back surface, which is far away from the N-epitaxial layer, of the N type substrate; and the back anode collector electrode is formed on the anode cavity emission region. The invention also provides a manufacture method of the IGBT device with the field stop buffer layer. Through increasing the thickness of the field stop buffer layer and regulating the concentration and the thickness between the P type buried layer and the N type substrate, the current density of the IGBT device is increased, and the conduction loss is reduced.

Description

technical field [0001] The invention belongs to the technical field of power semiconductor devices, in particular to an IGBT device with a field stop buffer layer and a manufacturing method. Background technique [0002] Insulated gate bipolar transistor (IGBT) is a commonly used power switching device controlled by voltage. It has large input capacitance, high input impedance, small driving current, fast speed, high withstand voltage, strong thermal stability, and high operating temperature. , Simple control circuit and other characteristics, it has become the mainstream device of power electronic devices at this stage. [0003] Since the invention of IGBT devices in the 1980s, they have experienced a series of evolutions such as PT (punch-through) type, PT (punch-through) type with N+ buffer layer, and NPT (non-punch-through) type and other field-stop (FS) IGBTs. The thickness of the IGBT chip has also been reduced from the initial 300um to the current 70um, and the chip ...

AI Technical Summary

Problems solved by technology

However, in the application process of the entire IGBT device, since the thickness of the field stop N-type buffer layer is between 2-10um, the problem that its conduction loss accounts for a large proportion has become increasingly prominent, and can no longer be used neglect

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