The invention discloses a
gallium nitride device structure having
high heat dissipation performance and a preparation method thereof. The
gallium nitride device structure comprises a
gallium nitride chip, an
etching stopping layer, and
a diamond heat dissipation layer. The
etching stopping layer is provided with a first surface, which is used as a growth interface, and the
diamond heat dissipation layer is grown on the first surface of the
etching stopping layer. The etching stopping layer is provided with a second surface, which is opposite to the first surface, and is used as a bonding interface, and the
gallium nitride chip is disposed on the second surface of the etching stopping layer in a bonding way. The etching stopping layer is formed by adopting a high
thermal conductivity material. The production method of the
gallium nitride chip and
diamond bonding structure adopts a low temperature technology, and a warping problem caused by
thermal expansion mismatch under high temperature is prevented, and no damages on existing devices are caused, and therefore integration between the
gallium nitride wafer or chip provided with the device and a thin
diamond layer is realized, a self-supporting diamond thick film substrate is not required, enhancement of heat dissipation performance is guaranteed, and at the same time, costs are obviously reduced, and then problems of a gallium nitride heat dissipation scheme such as high costs and poor heat dissipation effect are solved.