Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for preparing magnetic tunnel junction

A magnetic tunnel junction and magnetic technology, applied in the field of nanotechnology research and storage, can solve the problems of incompatibility with micromachining process, complicated process, difficult to obtain large-scale application, etc., and achieve good application potential, simple preparation process, and simple method. control effect

Active Publication Date: 2013-08-28
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
View PDF2 Cites 11 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method is complex and incompatible with micromachining processes, making it difficult to obtain large-scale applications

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing magnetic tunnel junction
  • Method for preparing magnetic tunnel junction
  • Method for preparing magnetic tunnel junction

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] In this embodiment, the preparation method of the magnetic tunnel junction is as follows.

[0041] Step 1. Preparation of "sandwich" structural unit:

[0042] Using "sandwich" structural units, such as figure 1 As shown, in this structural unit, the first magnetic electrode 2 adopts iron with a thickness of about 100 nanometers, and the second magnetic electrode 4 adopts cobalt with a thickness of about 100 nanometers, located between the first magnetic electrode 2 and the second magnetic electrode 4, And the non-magnetic layer 3 in contact with the first magnetic electrode 2 and the second magnetic electrode 4 adopts zinc oxide with a thickness of about 100 nanometers;

[0043] The above-mentioned "sandwich" structural unit can be prepared sequentially on a flat substrate by using the existing coating process, and one of the preparation methods is as follows:

[0044] (1) First, sputter a layer of iron electrode as the first magnetic electrode 2 on the clean flat sub...

Embodiment 2

[0052] In this embodiment, the method for preparing the magnetic tunnel junction is basically the same as that of Embodiment 1, except that in step 1, the first magnetic electrode 2 of the "sandwich" structural unit is made of lanthanum strontium manganese oxide with a thickness of about 100 nanometers. compound, the nonmagnetic layer 3 uses zinc oxide with a thickness of about 200 nanometers, and the second magnetic electrode 4 uses cobalt with a thickness of about 100 nanometers.

[0053] Similarly, a voltage is applied across the first magnetic electrode 2 and the second magnetic electrode 4 to ionize the magnetic atoms in the second magnetic electrode 2 into ions and move toward the first magnetic electrode 2 to form a conductive channel; increases, the distance from the conductive channel to the first magnetic electrode 2 decreases, the resistance of the "sandwich" structural unit becomes smaller, and the current increases; when the voltage increases to the critical voltag...

Embodiment 3

[0056] In this embodiment, the method for preparing the magnetic tunnel junction is basically the same as that of Embodiment 1, except that in step 1, the first magnetic electrode 2 of the "sandwich" structural unit is made of iron with a thickness of about 100 nanometers, which is non-magnetic. The layer 3 adopts bismuth ferrite with a thickness of about 150 nanometers, and the second magnetic electrode 4 adopts cobalt with a thickness of about 100 nanometers.

[0057] Similarly, a voltage is applied across the first magnetic electrode 2 and the second magnetic electrode 4 to ionize the magnetic atoms in the second magnetic electrode 2 into ions and move toward the first magnetic electrode 2 to form a conductive channel; increases, the distance from the conductive channel to the first magnetic electrode 2 decreases, the resistance of the "sandwich" structural unit becomes smaller, and the current increases; when the voltage increases to the critical voltage, the distance from ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Diameteraaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a method for preparing a magnetic tunnel junction. The method is based on a sandwich structural unit which is composed of a first magnetic electrode, a non-magnetic layer and a second magnetic electrode. The mode that voltage is exerted at the two ends of the first magnetic electrode and the two ends of the second magnetic electrode is adopted. Therefore, magnetic atoms in the second magnetic electrode lose (or getting) electrons and then ions are formed. The ions enter the non-magnetic layer and move toward the first magnetic electrode, and an electric conductivity channel is formed. Through control over the exerted voltage, the distance from the electric conductivity channel to the first magnetic electrode is short enough and therefore, the magnetic tunnel junction is formed. Compared with the prior art, the preparation method is simple, low in cost and compatible with the micromachining technology, and therefore, the preparation method has good application prospects.

Description

technical field [0001] The invention relates to the field of nanotechnology research and storage technology, in particular to a method for preparing a magnetic tunnel junction. Background technique [0002] Magnetic tunnel junctions refer to nanostructures composed of magnetic electrodes / nonmagnetic insulators or semiconductors / magnetic electrodes. If the magnetization directions of the two magnetic electrodes are parallel, the electrons of the majority-spin subband in one electrode will enter the empty state of the majority-spin subband in the other electrode, and the electrons of the minority-spin subband will also pass from one electrode to the other. The empty state of the minority-spin subband in the electrode, at this time, the tunneling process has a higher probability and the corresponding resistance is lower; however, if the magnetization directions of the two magnetic electrodes are antiparallel, the majority-spin subband in one electrode The spins of the electron...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L43/12B82Y25/00
Inventor 李润伟杨智唤詹清峰朱小健刘宜伟
Owner NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com