Patents
Literature
Patsnap Copilot is an intelligent assistant for R&D personnel, combined with Patent DNA, to facilitate innovative research.
Patsnap Copilot

284 results about "Voltage oscillation" patented technology

Reverse blocking type IGBT and manufacturing method therefor

The invention discloses a reverse blocking type IGBT and a manufacturing method therefor, and belongs to the technical field of a power semiconductor device. By introducing a floating P type body region on one side of a trench gate and introducing a trench collector structure in a collector region and a field stop layer, the positive breakdown voltage of a device is improved without influencing the threshold voltage and switch-on of an IGBT device; the gate-collector capacitance is lowered, and adverse influence caused by a Miller effect can be relieved; the overall gate capacitance is lowered, the switching speed of the device is improved, the switching loss of the device is lowered, and the compromising relation between forward switch-on voltage drop and switch-off loss of the conventional CSTBT device is improved; the problems of current, voltage oscillation and EMI in the device starting dynamic process can be avoided, and device reliability is improved; the current carrier enhancement effect at the emitter end of the device is improved, the current carrier concentration distribution in a drift region can be improved, and compromising between forward switch-on voltage drop andswitch-off loss can be further improved; and the reverse breakdown voltage of the device is improved, and high forward characteristic of the device is ensured while excellent reverse blocking performance is obtained.
Owner:UNIV OF ELECTRONICS SCI & TECH OF CHINA

Trench gate charge storage-type IGBT and manufacturing method thereof

The invention discloses a trench gate charge storage-type IGBT and a manufacturing method thereof, which belong to the technical field of power semiconductor devices. Through reasonably introducing asplit trench gate structure and an air floating P-type region, in a condition of not influencing the threshold voltage of the IGBT and conduction, Miller capacitance is reduced, and bad influences brought by Miller effects are improved; the overall gate capacitance is reduced, the device switching speed is improved, the switching losses of the device are reduced, and the compromise between forwardconduction voltage drop and turn-off losses of the traditional CSTBT structure is improved; current and voltage oscillations and EMI problems in the device dynamic starting process are avoided, and the device reliability is improved; electric field concentration effects at the bottom part of the trench are improved, and the breakdown voltage of the device is improved; carrier enhancement effectsat an emitter end of the device are improved, the carrier concentration distribution in a drift region is improved, and the compromise between forward condition voltage drop and turn-off losses is further improved; and besides, the manufacturing method disclosed in the invention has the advantages of low realization difficulty, high product rate and low cost.
Owner:UNIV OF ELECTRONIC SCI & TECH OF CHINA

Control system of LLC converter synchronous rectifier tube

Disclosed is a control system of an LLC converter synchronous rectifier tube. The control system comprises a voltage sampling circuit, a high-pass filter circuit, a PI compensation and effective valuedetection circuit and a control circuit which takes a microcontroller MCU as a core. A principle of circuit waveform oscillation caused by unavoidable parasitic inductance and parasitic capacitance in the circuit is utilized, and when an LLC converter works at high frequency, a drain source voltage VDS (SR) of the synchronous rectifying tube sends a change signal of the drain source voltage in aswitch-off period into the high-pass filter circuit and the PI compensation and effective value detection circuit through the sampling circuit to obtain an effective value amplifying signal of a drainsource voltage oscillation signal caused by parasitic parameters; and the control circuit which takes the microcontroller MCU as the core is adopted to compare the relation between a current value and a collected value in the last time, so that the conduction time of the synchronous rectification tube in the next cycle is changed, the synchronous rectifier tube can be switched off at the optimalswitch-off point, and the optimal efficiency operation of the synchronous rectifier tube can be realized.
Owner:SOUTHEAST UNIV +1

Doubly-fed wind farm sub-synchronous oscillation SVG suppressing method and device

The present invention provides a doubly-fed wind farm sub-synchronous oscillation SVG suppressing method and a device. The method comprises the following steps: acquiring voltage signal(s), current signal(s) and wind farm parameters of the output end(s) of a doubly-fed wind farm, wherein the wind farm parameters comprises a wind speed and a power-transmission line series compensation degree; determining active power signal(s), voltage oscillation amplitude(s) and current oscillation amplitude(s) according to the voltage signal(s) and the current signal(s); determining the working mode of a SVGcontroller; determining module parameter(s) of the SVG controller according to the determined working mode, the voltage oscillation amplitude(s), the current oscillation amplitude(s), oscillation frequencies, the wind farm parameters and a pre-established SVG parameter table, wherein the SVG parameter table is a pre-established corresponding table of the SVG function module parameter(s) and system operation information under different working modes; and performing sub-synchronous oscillation SVG suppressing on the wind farm by using the SVG controller with the determined parameter(s). According to the method, sub-synchronous frequency band signal(s) are filtered from sampling signal(s), and the doubly-fed wind farm is subjected to sub-synchronous oscillation SVG suppressing by using the voltage(s) and the active power(s).
Owner:NORTH CHINA ELECTRICAL POWER RES INST +3

Method for extracting stray parameters of laminated bus bar based on frequency characteristics of SiC MOSFET

The invention discloses a method for extracting stray parameters of a laminated bus bar based on frequency characteristics of a SiC MOSFET. The method comprises the following steps of firstly settingup a SiC MOSFET double-pulse test platform, and externally connecting the section under test of the laminated bus bar to the test platform; connecting multiple sets of additional capacitors in parallel at both ends of the SiC MOSFET, using the frequency information of oscillation in the off-voltage waveform of the SiC MOSFET before and after the additional capacitors are connected in parallel to obtain the resonance angular frequencies of multiple sets of equivalent circuit models, and further calculating the stray inductance and parasitic capacitance of the laminated bus bar to achieve the extraction of stray parameters of the laminated bus bar. The invention utilizes the high switching speed characteristics of the SiC MOSFET to excite obvious off-voltage oscillations. Compared with the traditional indirect measurement method, the measurement deviation caused by human factors is reduced. In addition, the invention can measure the stray inductance and parasitic capacitance in any section of the laminated bus bar, and the measurement is more flexible and comprehensive.
Owner:ZHEJIANG UNIV

Double-fed wind power plant sub-synchronous oscillation SVC suppression method and device

The invention provides a double-fed wind power plant sub-synchronous oscillation SVC suppression method and device. The method comprises the following steps: acquiring a voltage signal, a current signal and wind power plant parameters of the double-fed wind power plant output end, wherein the wind power plant parameters comprise wind speed and power transmission line series compensation; ;determining an active power signal, a voltage oscillation amplitude and a current oscillation amplitude according to the voltage signal and the current signal; determining a work mode of a SVC controller; determining module parameters of the SVC controller according to the determined work mode, the voltage oscillation amplitude, the current oscillation amplitude, the oscillation frequency, the wind powerfield parameter and a pre-established SVC parameter table, wherein the SVC parameter table is the pre-established SVC function module parameter and system operation information corresponding table under different work modes; and performing sub-synchronous oscillation SVC suppression on the wind power field by using the SVC controller with determined parameter. The sub-synchronous band signal is filtered from a sampling signal, and the sub-synchronous oscillation SVC suppression is performed on the double-fed wind power plant by using the voltage and the active power.
Owner:NORTH CHINA ELECTRICAL POWER RES INST +3

Reverse blocking type IGBT and manufacturing method therefor

The invention discloses a reverse blocking type IGBT and a manufacturing method therefor, and belongs to the technical field of a semiconductor power device. By introducing trench emitter and trench collector structures, the reverse breakdown voltage of a device is improved without influencing the threshold voltage and switch-on of an IGBT device; the overall gate capacitance is lowered, the switching speed of the device is improved, the switching loss and driving power consumption of the device are lowered, and the compromising relation between forward switch-on voltage drop and switch-off loss of the conventional CSTBT structure is improved; the problems of current, voltage oscillation and EMI in the device starting dynamic process can be avoided, and device reliability is improved; theelectric field concentration effect at the bottom of the trench is improved, the forward breakdown voltage of the device is improved, and reliability of the device is further improved; and the currentcarrier enhancement effect at the emitter end of the device is further improved, the current carrier concentration distribution in a drift region can be improved, and compromising between forward switch-on voltage drop and switch-off loss can be further improved. The manufacturing method disclosed in the invention is compatible with the existing manufacturing process of a CSTBT device.
Owner:UNIV OF ELECTRONICS SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products