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Fast recovery diode and manufacturing method thereof

A technology for recovering diodes and semiconductors, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., to achieve the effects of reducing the conductance voltage drop, enhancing the conductance modulation effect, and slowing down the rising trend

Inactive Publication Date: 2013-01-09
盛况
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The Schottky barrier region of the traditional MPS device invades multiple circular P-type conductive material regions, and the Schottky area and the P-type conductive material region limit each other. If the distance between the P-type conductive material regions is increased, the The Schottky area accounts for the percentage of the entire device area, which can reduce the forward voltage drop of the device at a small current density, and at the same time cause an increase in the forward voltage drop at a high current density, a decrease in the reverse breakdown voltage, and a reverse The increase of leakage current affects the positive and negative conduction characteristics of the device

Method used

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  • Fast recovery diode and manufacturing method thereof
  • Fast recovery diode and manufacturing method thereof
  • Fast recovery diode and manufacturing method thereof

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Embodiment

[0034] figure 2 It is a schematic cross-sectional view of a fast recovery diode of the present invention, which includes: an N-type conductive semiconductor silicon material substrate layer 1, which is a heavily doped N-conductive type silicon semiconductor material, and the phosphorus doping concentration is 1E19cm -3 ; The upper surface of the N-type conductive semiconductor silicon material substrate layer 1 is an N-type conductive semiconductor silicon material drift layer 2, and the phosphorus doping concentration is 2E14cm -3 , with a thickness of 60 μm; the first P-type region 3, located in the upper part between the trenches, is a P-type conductive semiconductor silicon material, with a junction depth of 1.5 μm; the second P-type region 4, located at the bottom of the trench, is P-type conductive Semiconductor silicon material, junction depth of 1μm; Schottky barrier junction 5, located on the sidewall of the trench, trench depth of 4μm, width of 2μm, Schottky barrier...

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Abstract

The invention relates to a fast recovery diode device, and also relates to a manufacturing method of the fast recovery diode device. According to the invention, a groove structure is added into a traditional Schottky barrier rectifier (MPS) structure intruding into a PN junction. Compared with the traditional MPS device, the fast recovery diode device disclosed by the invention has the advantages of lower forward voltage drop and higher current density.

Description

technical field [0001] The invention mainly relates to a structure and a manufacturing process of a fast recovery diode device, in particular to a structure and a manufacturing process of a novel Schottky fast recovery diode device in which a trench structure with a low forward voltage drop invades a PN junction. Background technique [0002] Semiconductor devices with trench structures have become an important trend in device development. For power semiconductor devices, the requirement to continuously reduce the conduction voltage drop or continuously increase the current density has become an important trend in the development of devices. [0003] B J Baliga, the inventor of the junction barrier Schottky rectifier, proposed a Schottky barrier rectifier (MPS) that invades the PN junction, as figure 1 As shown, the surface of the device contains multiple P-type conductive material regions 103 , and the surface of the semiconductor material between the P-type conductive m...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/41H01L29/872H01L21/28H01L21/329
Inventor 盛况朱江
Owner 盛况
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