Planar gate IGBT (Insulated Gate Bipolar Transistor) chip

Abstract

The invention discloses a planar gate IGBT (Insulated Gate Bipolar Transistor) chip, which comprises a collector metal electrode, a P+ collector region, an N- drift region, a P- base region, a P+ ohmic contact region, an N+ source region, a gate oxide layer, a polysilicon gate and a gate metal electrode which are arranged successively, and an emitter metal electrode arranged above the P+ ohmic contact region, wherein the polysilicon gate of the planar gate IGBT chip adopts a planar gate structure. The planar gate IGBT chip also comprises a first N-type carrier buried layer and/or a second N-type carrier buried layer. The first N-type carrier buried layer is located below the P- base region. The second N-type carrier buried layer is located below the gate oxide layer and at both sides of the P- base region. The planar gate IGBT chip has the beneficial effects that the compromise relation between conduction pressure drop and turn-off loss of the IGBT is reduced, lower power consumption is realized, and thus the power density, the operating junction temperature and the long-term reliability of the IGBT chip are increased.

Description

technical field [0001] The invention relates to a semiconductor IGBT (Insulted Gate Bipolar Transistor, insulated gate bipolar transistor) chip structure, in particular to a planar gate IGBT chip structure with double hole blocking effect. Background technique [0002] Insulated gate bipolar transistor (IGBT) has the characteristics of on-state voltage drop, large current capacity, high input impedance, fast response and simple control, and is widely used in industry, information, new energy, medicine, transportation, military and aviation fields . as attached figure 1 Shown is a schematic structural diagram of a conventional planar gate IGBT, which includes a gate 1 , an emitter 2 , a collector 3 , a P-well 4 , an N drift region 5 and an N buffer region 6 . In order to reduce the turn-on voltage drop of the IGBT, a trench gate structure is used. However, after trench etching, the surface is rough and the damage is large, which will affect the mobility of carriers; the ro...

AI Technical Summary

Problems solved by technology

But the patent is only for trench gate IGBT, not mentioning planar gate IGBT structure

In addition, the patent does not involve N-type carrier buried layer structure

[0008] The various existing technologies mentioned above have enhanced the conductance modulation effect of the IGBT to a certain extent, thereby reducing the conduction voltage drop, but these solutions only have a single hole blocking effect (only a barrier blocking effect)

The aforementioned patent proposes a method with physical barrier effect, but only limited to trench gate IGBT

Images