Method for manufacturing trench gate type IGBT (insulated gate bipolar transistor) chip
A fabrication method and trench gate technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as single hole blocking effect
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[0182] The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative work shall fall within the protection scope of the present invention.
[0183] As attached Figure 4 Attached Figure 52 As shown, specific embodiments of a trench gate IGBT chip manufacturing method of the present invention and a trench gate IGBT chip manufactured according to the trench gate IGBT chip manufacturing method of the present invention are given. The following is combined with the drawings and The specific embodiments further illustrate the present invention.
[0184] As attached Figure 4 Attach...
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