High-performance super-junction structure IGBT structure and method thereof

Abstract

The invention provides a high-performance super-junction structure IGBT structure and a method thereof. The structure comprises a collector; a p-type buffer region arranged over the collector; an n-type buffer region arranged over the p-type buffer region; an n + type drift region arranged over the n type buffer region; a p-type block arranged in the n +-type drift region; a first etching groove formed in the top of the n + type drift region; a second etching groove formed in the bottom of the first etching groove; a p-type drain grid block arranged in the second etching groove; a p-type region arranged in the first etching groove; and a third etching groove formed in the top of the p-type region. The p-type block and the p-type drain grid block are arranged in a drift region, so that thedrift region is divided into three parts, the p-type block and the p-type drain grid block both play a role in blocking holes, the conductivity modulation effect is enhanced, the device has small conduction voltage drop under heavy current, the doping concentration of the drift region can be improved while the same withstand voltage is ensured, the conduction resistance and the forward voltage drop are reduced, and the power consumption is reduced.

Description

technical field [0001] The invention relates to the technical field of IGBTs, in particular to a structure of a high-performance super junction structure IGBT. Background technique [0002] At present, my country's new power electronic devices mainly include VDMOS and IGBT devices. IGBT has MOS input and bipolar output functions. It has the advantages of fast speed, high input impedance and good thermal stability. Since its inception, it has quickly developed into a mainstream power switching device in the field of medium and high power power electronics. Has been widely used in industrial control, automotive electronics, home appliances, network communications and other fields. Like other power devices, the optimization of IGBT structure mainly revolves around reducing power consumption and improving breakdown voltage. From the perspective of power consumption, the main problem faced by IGBT: in order to reduce the power consumption of the device, the on-resistance must b...

AI Technical Summary

Problems solved by technology

From the perspective of power consumption, the main problem faced by IGBT: in order to reduce the power consumption of the device, the on-resistance must be reduced first, which requires that the drift layer of the device has a higher concentration of free carriers in the on-state, however, a large number of The free carriers in the device will lead to a longer turn-off time of the device and increase the turn-off loss of the device, so there is a contradiction between reducing the on-resistance and reducing the turn-off loss, which is the main problem of IGBT

However, doping will destroy the charge balance, and irradiation has a greater impact on the service life of the device

Therefore, it was proposed to use Schottky contacts in super-junction MOSFETs to improve switching characteristics, and the third-generation COOLMOSTMC3 series improved its reverse recovery characteristics by integrating a SiC diode inside, which achieved better results but increased manufacturing costs. difficulty and cost

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