Thyristor gate cathode structure and gate pole commutation thyristor with thyristor gate cathode structure

Abstract

The invention discloses a thyristor gate cathode structure and a gate pole commutation thyristor with the thyristor gate cathode structure. The thyristor comprises an N-substrate, a P base region, a P+ short base region, an N+ emitter region, a door pole metal electrode and a cathode metal electrode. The N+ emitter region, the P+ short base region, the P base region and the N-substrate are sequentially distributed, the cathode metal electrode is arranged on the outer surface of the N+ emitter region, and the door pole metal electrode is arranged on the outer surface of the P+ short base region. The thyristor gate cathode structure is of a two-layer step structure, wherein the first layer of steps is a shallow step, and the bottom of the first layer of the steps is a P+N+ boundary. The second layer of the steps is a deep step, and the bottom of the second layer of the steps is a PN+ boundary. The gate pole commutation thyristor with the thyristor gate cathode structure further comprises an N' buffer layer and a P+ anode region. The combination of electrons injected in the N+ emitter region of the thyristor is reduced at the P+ short base region and the P base region, conductivity modulation effects of the thyristor are intensified, and connected currents and the starting speed can be further improved.

Description

technical field [0001] The invention relates to a semiconductor device structure, in particular to a thyristor gate-cathode junction structure applied in the field of power semiconductors, and a gate-commutated thyristor having the gate-cathode junction. Background technique [0002] Silicon is a kind of semiconductor material. The semiconductor devices represented by silicon are all processed on the basis of the original single crystal. By doping a small amount of impurities into it, the conductivity is significantly changed, thereby forming a specific structure and doping. Miscellaneous distribution, so as to realize the function of the device. The dopants are divided into two categories: one is N-type dopants, such as phosphorus and arsenic atoms. The other type is P-type dopants, such as boron, aluminum and gallium atoms. Doping phosphorus, arsenic, and antimony can make silicon an electron-conducting type (N-type) silicon, and doping boron, aluminum or gallium can mak...

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Problems solved by technology

[0010] attached by image 3 It can be seen that although the gate-cathode junction structure in the prior art and the thyristor with this structure have a large amount of electron injection from the N+ emitter region 6, due to the high doping concentration of the P+ short base region 5, a large amount of electrons are provided. The holes, where the electrons recombine with the holes, thus reducing the amount of electron injection in the P-base and N-base regions, which becomes a factor limiting the conductance modulation effect

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