41results about How to "No longer be formed" patented technology

The invention relates to a stator arrangement for an electric machine, particularly a DC motor, comprising a stator body having a stator back yoke ring and a number of stator teeth between which stator slots to receive stator windings are formed, the stator teeth extending radially from the stator back yoke ring and stator poles being formed at the free ends of the stator teeth, the stator teeth being coupled to a sleeve, which extends coaxially to the stator body, at their free ends. The invention also relates to a method for the manufacture of a stator arrangement of this kind and a direct current motor that employs such a stator arrangement.

A method for manufacturing a semiconductor thin film is provided which can form its crystal grains having a uniform direction of crystal growth and being large in size and a manufacturing equipment using the above method, and a method for manufacturing a thin film transistor. In the above method, by applying an energy beam partially intercepted by a light-shielding element, melt and re-crystallization occur with a light-shielded region as a starting point. The irradiation of the beam gives energy to the light-shielded region of the silicon thin film so that melt and re-crystallization occur with the light-shielded region as the starting point and so that a local temperature gradient in the light-shielded region is made to be 1200° C./μm or more. In the manufacturing method, a resolution of an optical system used to apply the energy beam is preferably 4 μm or less.

A ceramic electronic component that includes a ceramic main body, a coating film and external electrodes on the surface of the ceramic main body. The coating film is selectively formed on the surface of the ceramic main body by applying, to the surface of the ceramic main body, a resin-containing solution that etches the surface of the ceramic main body so as to ionize constituent elements of the ceramic main body. The coating film includes a resin and the constituent elements of the ceramic main body, which were ionized and deposited from the ceramic main body.

A method for fabricating a semiconductor device includes forming a hard mask pattern over a substrate, forming an isolation layer for defining an active region by using the hard mask pattern, forming a buried gate in and across the active region and the isolation layer over the substrate, forming an inter-layer dielectric layer over the substrate, forming a storage node contact hole that exposes the hard mask pattern by selectively etching the inter-layer dielectric layer, extending the storage node contact hole to expose the active region by removing the hard mask pattern exposed under the storage node contact hole, and forming a storage node contact plug that fills the extended storage node contact hole.

A main magnetic pole of a recording head is formed in an inverted trapezoidal shape by ion milling but, the long milling time poses a problem of variations in the inverted trapezoidal shape and the dimensional variations in track width. In one embodiment of the invention, a recording head is formed by first forming a lower magnetic pole, a gap layer, and conductor coils, forming an upper magnetic yoke over the gap layer at a position recessed from the air bearing surface, and forming an inorganic insulative layer in the recessed portion. A back magnetic pole connected with the upper magnetic yoke is formed on the back of the lower electrode. Successively, the upper surfaces of the inorganic insulative layer and the upper magnetic yoke are planarized, on which an underlayer film such as of Rh is formed. A magnetic layer is formed by stacking a plurality of thin magnetic films by sputtering over the underlayer film from the air bearing surface as far as the position overlapping the upper magnetic yoke. Successively, ion milling is applied to form a main magnetic pole of an inverted trapezoidal shape having a taper on the lateral surface as viewed from the air bearing surface.

Provided are a deposition substrate of a deposition apparatus, a method of forming a layer using the same, and a method of manufacturing an organic light emitting diode (OLED) display device. The method of forming a layer using the deposition substrate includes preparing a substrate, forming a heating conductive layer for Joule heating on the substrate, forming a first insulating layer on the heating conductive layer for Joule heating and including a groove or hole, forming a deposition material layer on a top surface of the first insulating layer having the groove or hole, and applying an electric field to the heating conductive layer for Joule heating to perform Joule-heating on the deposition material layer. Thus, the method is suitable for manufacturing a large-sized device.

The variation of the parasitic inductance generated at the output terminal of a transistor in the final stage of a multistage amplifier unit is reduced. One side of the semiconductor chip that includes the final stage transistor is put in contact with the inner wall of a square recess formed in a wiring substrate. The semiconductor chip is positioned and fixed accurately at the bottom of the recess, whereby the drain wire of the transistor is fixed. Then, a chip edge at which the drain electrode is disposed on top of the chip is put in contact with the inner wall of the recess, which is closer to the drain bonding pad. A metallized layer is formed of the same size as that of the chip at the bottom of the recess and a fusion bonding material is supplied on the metallized layer.

An electronic ballast which includes a resonant load circuit (L1, C1) in series with a discharge lamp (LA), the resonant load circuit being supplied by an inverter (S1, S2) which outputs variable alternating voltages at frequencies above 200 KHZ. Alternatively, an electronic transformer incorporates a load circuit and a variable output frequency inverter for operating a low volt halogen lamp (7) at variable alternating frequencies above 200 KHZ. Passive components of the ballast and transformer are integrated into a multilayer circuit (13).

Radical in a plasma generation chamber is supplied to a process chamber through an introducing aperture, and HF gas is supplied as a process gas from the vicinity of the radical introducing aperture. A native oxide film of the substrate surface of a IV group semiconductor doped an impurity is removed, with a good surface roughness equal to the wet cleaning. The substrate after the surface treatment is deposited with a metal material and metal silicide formation by thermal treatment is performed, and during these processes, the substrate is not exposed to the atmosphere, and a good contact resistance equal to or better than the wet process is obtained.

System for imaging pieces of sawn timber travelling transversely past the system. Each piece of sawn timber includes a top surface and a bottom surface, with sides connecting them. The system is arranged to image the top surface and at least one side when the sawn piece travels past the system's measuring area. At least one matrix camera is positioned in a first position relative to the path of the sawn pieces. At least one minor is positioned in a second position relative to the path of the sawn pieces and to the said first position. The first and second positions are selected in such a way that each sawn piece travelling past transversely can be imaged using the at least one matrix camera directly from a first direction and as a mirror image through the at least one mirror from at least one second direction.

The theft-protected screw part in the form of a nut or a screw has a free end region and a ring-shaped depression formed at the end region for the engagement of a wrench for rotation the screw part. Viewed from radially outside to radially inside, the depression is delimited by an outer edge, a bottom and an inner edge. The outer edge forms outer abutment surfaces and the inner edge forms inner abutment surfaces for the wrench. The screw part is composed of a main part and an insert. The main part has a protrusion, which is located within the inner edge. The insert is designed in a ring shape, has a hole for accommodating the protrusion and forms the inner abutment surfaces.

In a field emission display device, an opening dimension in a predetermined direction (or x direction) of an opening of a control electrode is greater than an opening dimension in the predetermined direction of an electron pass aperture of a shield electrode, and the shield electrode is located at the front of the control electrode so that the entire range of the opening dimension in the predetermined direction of the electron pass aperture is within the range of the opening dimension in the predetermined direction of the opening of the control electrode.

A cooling system including a first coolant line and a second coolant line, at least one first component to be cooled, into which the first coolant line opens, and a first ventilation line. The first ventilation line is fluidically connected to the at least one first component and is configured for ventilating the at least one first component. The first ventilation line opens into the second coolant line.

An HAA includes a head slider having at least one head element, a high-stiffness arm member for supporting the head slider at one end section, an actuator, mounted to the other end section of the arm member, for rotationally moving the arm member in a direction substantially parallel with a recording medium surface around a horizontal rotation axis of the arm member, and a resilient plate spring for generating a load, the plate spring having one end section fixed to the arm member and the other end section provided with a load point for energizing the head slider in a direction to the recording medium surface.