Film bulk acoustic wave resonator and preparation method thereof
A thin-film bulk acoustic wave and resonator technology, which is applied in the direction of electrical components and impedance networks, can solve the problems of increasing processing equipment and silicon wafer thickness precision control, increasing FBAR insertion loss, and unfavorable CMOS chip processing, etc., to achieve The effect of reducing equipment requirements, thin insertion loss, and increasing process difficulty
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[0051] 1) Deposit a layer of silicon nitride with a thickness of about 100 nm on the surface of the polished silicon 1 by CVD. The polished surface may be (100), (110) or (111) oriented. Then use photolithography to remove the silicon nitride corresponding to the area of the sacrificial layer, leaving the silicon nitride at the part of 8 and 9 as image 3 shown.
[0052] 2) On the silicon surface on which the silicon nitride 8 and 9 have been grown, a layer of silicon dioxide 10 is grown in the area where the silicon nitride is removed by wet thermal oxidation treatment. The silicon dioxide has a thickness between 400nm and 800nm. like Figure 4 shown.
[0053] 3) After the above steps, remove the residual silicon nitride 8, 9 on the silicon surface, leaving the silicon dioxide 10 part. like Figure 5 shown.
[0054] 4) After the above steps, an amorphous aluminum nitride layer 11 of about 100 nm is grown on the silicon surface, and then a layer of metal is grown on t...
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