This invention relates to a cleaning solution and cleaning method for removing the SiO2 film layer on the surface of
silicon carbide. The cleaning solution comprises the following components by volume: 15-20% HF, 5-10% HNO3, 8-12% NH4F, 0.01-0.05%
nonionic surfactant, and the remainder is
ultrapure water. The
mass concentration of HF is 49%, the
mass concentration of HNO3 is 68%, and the
mass concentration of NH4F is 30%. The cleaning method includes the following steps: (1) pre-cleaning the
silicon carbide with
ultrapure water; (2) performing main cleaning on the pre-cleaned
silicon carbide using the above cleaning solution; (3) placing the main-cleaned
silicon carbide into a 15-20% NH4OH / H2O2
mixed solution for
neutralization and cleaning, then cleaning with an
ultrapure water solution containing disodium ethylenediaminetetraacetate, and finally cleaning with a four-stage countercurrent ultrapure
water rinsing system; (4) performing post-treatment cleaning in ultrapure water with an
ozone content of 4-6 ppb, then rinsing with ultrapure water, and finally
drying with isopropanol vapor. This method ensures that the
silicon carbide surface is free of residue, has low
particulate contamination, and is of high purity after cleaning, meeting the stringent requirements of
semiconductor etching processes for the cleanliness and integrity of the material surface.