Zinc oxide single crystal polishing technology for substrate of photoelectric device

Abstract

The invention provides a polishing technology of a zinc oxide single crystal substrate, which can meet the requirements for the epitaxial growth of a photoelectric device. The zinc oxide single crystal substrate with the surface RMS (root mean square) roughness of less than 1nm within a surface range of 10 mu m*10 mu m can be obtained through the steps of rough grinding of a single crystal, bonding, loading on a disc, mechanical rough grinding, mechanical fine grinding, mechanical rough polishing, chemical mechanical fine polishing, cleaning and packaging. The polishing technology relates to a bonding agent, a bonding technology and a technology of unloading from the disc used in the bonding process of the zinc oxide single crystal substrate, as well as grinding fluid, polishing fluid and a grinding thickness control technology used in the grinding process and the polishing process. The obtained zinc oxide single crystal substrate can be used for the epitaxial growth of a semiconductor photoelectric device.

Description

technical field [0001] The invention relates to a ZnO single crystal substrate polishing method which can satisfy homoepitaxial / near-mismatched epitaxial growth of semiconductor films. Background technique [0002] Zinc oxide is a direct bandgap II-VI wide bandgap compound semiconductor material, which has excellent characteristics such as large bandgap (3.37 eV), high exciton binding energy (60 meV), and wet chemical etching. It has broad application prospects in optoelectronic devices such as high-efficiency light-emitting diodes (LEDs), laser diodes (LDs), ultraviolet detectors, high-power microwave devices, transparent electrodes, and solar cells. Its application will bring digital storage and detection With the revolution of communication technology, it will completely change the history of human traditional lighting. In addition, ZnO materials also have excellent piezoelectric and gas-sensing properties, and can be used to prepare high-performance acoustic transducers...

AI Technical Summary

Problems solved by technology

[0003]Sapphire and SiC single crystals are currently the most commonly used substrates for ZnO / GaN thin film epitaxy, however, due to large lattice mismatch and different thermal expansion coefficients, heterogeneous Epitaxial ZnO / GaN-based thin-film optoelectronic devices have a relatively high defect density. It is generally believed that high-concentration defects will introduce non-radiative recombination centers, thereby seriously affecting the luminescence performance of optoelectronic devices.

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