Detuning feed seam antenna RTO terahertz wave source and manufacturing process

A slot antenna and manufacturing process technology, applied in the field of terahertz wave sources, can solve the problems of restricting terahertz technology and low power of terahertz wave sources, etc.

Active Publication Date: 2017-01-04
TIANJIN UNIV
View PDF5 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The power of the existing terahertz wave source is too low, only a few to tens of nanowatts, which restricts the development of terahertz technology, so this frequency band is a blank frequency band to be developed, also known as the terahertz gap

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Detuning feed seam antenna RTO terahertz wave source and manufacturing process
  • Detuning feed seam antenna RTO terahertz wave source and manufacturing process
  • Detuning feed seam antenna RTO terahertz wave source and manufacturing process

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0053] The RTO terahertz wave source and manufacturing process of the misadjusted feed slot antenna of the present invention will be described in detail below in conjunction with the embodiments and the drawings.

[0054] Such as Figure 1 ~ Figure 4 As shown, the RTO terahertz wave source of the misadjusted feed slot antenna of the present invention includes a main substrate 5, a left electrode 1 and a right electrode 2 provided on the main substrate 5, and the left side of the right electrode 2 is embedded in The silicon dioxide layer 6 is formed symmetrically between the upper and lower end faces of the left electrode 1 and the right electrode 2 on the lower right side of the left electrode 1, so that the main substrate 5, A communicating air cavity 4 is formed between the silicon dioxide layer 6, the left electrode 1 and the right electrode 2. The air cavity 4 includes two ends formed on the upper end surface of the main substrate 5. The part of the air cavity 4 enclosed by ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a detuning feed seam antenna RTO terahertz wave source and a manufacturing process. The detuning feed seam antenna RTO terahertz wave source comprises a left electrode and a right electrode arranged on a main substrate, wherein the left side edge of the right electrode is embedded in a concave edge formed on the lower part of the right side of the left electrode, and a silicon dioxide layer is symmetrically arranged between upper and lower opposite end faces of two ends of each of the left electrode and the right electrode to ensure that air cavities communicating with one another are formed among the main substrate, the silicon dioxide layer, the left electrode and the right electrode, a convex block protruding towards the right electrode is formed in the middle part of the right side edge of the left electrode, and grooves are symmetrically formed in the left electrode positioned on two sides of the convex block, wherein the main substrate for forming bottom surfaces of the air cavities is positioned below the two grooves, a resonant tunneling diode is arranged between the bottom surface of the convex block and the upper end surface of the corresponding main substrate and has a knife structure, and the knife handle part of the knife structure is transversely inserted into a concave edge formed on the lower part of the left side of the right electrode. The detuning feed seam antenna RTO terahertz wave source disclosed by the invention can achieve oscillation of an oscillator at different frequency bands by changing the position of an RTD in the oscillator.

Description

Technical field [0001] The invention relates to a terahertz wave source. In particular, it relates to a RTO terahertz wave source and manufacturing process for an offset-fed slot antenna. Background technique [0002] Terahertz (THz) waves refer to electromagnetic waves with frequencies in the range of 0.1 terahertz to 10 terahertz, with wavelengths ranging from 0.03mm to 3mm, between millimeter waves and infrared. However, due to the high loss of THz waves in the air, a high-power wave source is needed to commercialize it in the communication field. The power of the existing terahertz wave source is too low, only a few to dozens of nanowatts, which restricts the development of terahertz technology. Therefore, this frequency band is a white space to be developed, also known as the terahertz gap. [0003] Since 0.1-10 terahertz waves can penetrate materials such as plastic, paper, wood, human body, atmosphere, etc., it can be widely used in security scanning, radio astronomy, biol...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/88H01L21/329H01L23/64H01Q13/10H01Q1/22
CPCH01L28/40H01L29/66151H01L29/882H01Q1/22H01Q13/10
Inventor 毛陆虹赵帆郭维廉谢生张世林
Owner TIANJIN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products