Monolithic integrated manufacturing method for indium phosphide-based resonant tunneling diodes and high-electron-mobility transistors

Abstract

The invention provides a monolithic integrated manufacturing method for indium phosphide-based resonant tunneling diodes and high-electron-mobility transistors, which comprises the following basic steps: orderly growing high-electron-mobility transistor and resonant tunneling diode materials on a semiconductor material indium phosphide (InP) substrate with molecular beam epitaxial equipment; etching the surface of an epitaxial wafer with electron beams, and forming the mesa of the resonant tunneling diodes through optical lithography and wet etching; realizing the isolation between devices through the optical lithography and the wet etching to form isolated channels; manufacturing upper and lower electrodes of the resonant tunneling diodes and source electrodes and drain electrodes of the high-electron-mobility transistors through metal ohmic contact, and then annealing; manufacturing grid electrodes through electron beam lithography, dry etching and wet etching; manufacturing metal terminals through dry etching, optical lithography and electron beam evaporation; and finally, interconnecting the resonant tunneling diodes and the high-electron-mobility transistors through a benzocyclobutene flatness process and metal wiring. The method has the characteristics of simple process, strong operability, high finished product ratio and the like, and has good practicability.

Description

technical field [0001] The invention relates to a method for manufacturing a transistor, in particular to an integrated method for manufacturing a resonant tunneling diode and a high electron mobility transistor, in particular to a method for realizing phosphorization by benzocyclobutene (BCB) planarization technology A method for monolithically integrating an indium-based resonant tunneling diode (RTD) and a high electron mobility transistor (HEMT). Background technique [0002] After nearly 20 years of research, it shows that InP materials are one of the electronic materials with the best performance so far. etc. have obvious advantages, and will be the mainstream material for the development of high-speed devices in the future. [0003] Resonant tunneling diode (RTD) is a negative resistance nanoelectronic device based on the quantum tunneling effect. It has the characteristics of fast response, high operating frequency, and low power consumption. The RTD can be connecte...

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Problems solved by technology

[0007] The purpose of the present invention is to invent an indium phosphide-based Monolithic Integra

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