38results about How to "Improve passivation quality" patented technology

The invention discloses a method for preparing a back fully-passivated contact solar cell by utilizing tubular PECVD and the back fully-passivated contact solar cell. The method comprises the steps of carrying out pre-cleaning, double-sided texturing, front boron diffusion, front laser selective doping, secondary cleaning and back polishing on a silicon wafer; depositing a silicon dioxide thin film layer and a phosphorus-doped amorphous silicon carbide thin film layer on the back surface of the tubular PECVD equipment, and performing annealing treatment to convert amorphous silicon carbide into microcrystalline silicon carbide; depositing an Al2O3 passivation layer and an antireflection layer; and performing silk-screen printing and sintering to obtain the back fully-passivated contact solar cell. The method disclosed by the invention has the advantages of simple process, convenience in operation, low cost, good compatibility with the existing production line, good preparation controllability, high preparation efficiency, good safety and the like, can be used for preparing the high-efficiency back fully-passivated contact solar cell, is suitable for large-scale preparation, is beneficial to industrial application, and has a very high use value and a very good application prospect.

The invention relates to a semiconductor apparatus (1) and a method of fabrication for a semiconductor apparatus (1), wherein the semiconductor apparatus (1) comprises a semiconductor layer (2) and a passivation layer (3), arranged on a surface of the semiconductor layer (2), for passivating the semiconductor layer surface (20), wherein the passivation layer (3) comprises a chemically passivating passivation layer element (31) and a field-effect-passivating passivation layer (33) which are arranged above one another on the semiconductor layer surface (20). The semiconductor apparatus is preferably a solar cell.

The invention provides an N type double face battery preparation method comprising the following steps: an N type silicon chip is subjected to double face reactive ion etching operation after undergoing damage processing operation, and therefore a nanometer pile face can be made on a surface; a front face of the N type silicon chip is subjected to boron diffusion operation after a back face of the N type silicon chip undergoes SiOx-SiNy mask layer processing operation; the front face is subjected to the SiOx-SiNy mask layer processing operation after the SiOx-SiNy mask layer on the back face is removed via an HF solution, an SiO2 layer is grown on the back face and used as a mask layer, an N++ window is formed after point perforating operation is performed under a main grid, residual damage during perforation can be removed via use of weak alkali liquor, single face phosphorus diffusion is performed on the back face of the N type silicon chip, an N++ layer is formed at a perforated position, N+ layers are formed at other areas, and the N type silicon chip is subjected to HF processing operation after edge isolation is conducted on the N type silicon chip; the SiOx-SiNy mask layer and borosilicate glass on the front face and phosphorosilicate glass on the back face are removed; RCA cleaning operation is performed; the front face and the back face of the N type silicon chip are respectively subjected to A12O3/SiNx and lamination passivation operation, and sintering operation is conducted after screen printing operation; via the N type double face battery preparation method, Uoc, Isc and FF can be improved; photoelectric conversion efficiency of a front face of a battery can be improved.

The invention discloses a surface plasma treatment process for a tooth roller of a flour mill. The surface plasma treatment process comprises the following steps of (1) surface polishing, (2) grease removing treatment, (3) washing treatment, (4) passivating treatment, (5) washing and drying and (6) plasma treatment. According to the surface plasma treatment process, the surface of the tooth roller is subjected to passivating treatment first, added modified nano diatomaceous earth and nano silicon dioxide improve the evenness, compactness and stability of a passivation film, and meanwhile a good antibacterial effect is achieved by the passivation film; plasma treatment is conducted after passivating treatment so that fusing of the passivation film and a substrate of the tooth roller can be improved and the hardness and the corrosion resistance of grinding teeth of the tooth roller can also be improved, and the finally the treated tooth roller has excellent strength, corrosion resistance and antibacterial and antirust performance. Compared with an existing tooth roller, the service life is prolonged by 10-12 times, flour yield is improved by about 30%, the power consumption of each ton of flour is reduced by 15-18 KW.h, and the economic benefit is obviously improved.

The invention discloses a preparation method of an N-type silicon chip a-Si:H film for a heterojunction with intrinsic thin layer (HIT) battery. The preparation method comprises the following steps: (1) cleaning and texturing an N-type silicon chip; (2) carrying out oxidation layer removal treatment; (3) putting the N-type silicon chip into a plasma enhanced chemical vapor deposition (PECVD) cavity, firstly extracting background vacuum, heating and warming the N-type silicon chip, extracting high vacuum, introducing deposition gases SiH4 and H2, carrying out a-Si:H film deposition on the front surface of the N-type silicon chip, and turning over the silicon chip; and (4) repeating the processes in the step (3), carrying out a-Si:H film deposition on the back surface of the N-type silicon chip, and finishing preparation of the N-type silicon chip a-Si:H film for the HIT battery. According to the preparation method, the a-Si:H film with high passivation quality and low defect density can be obtained; the surface quality of the silicon chip is greatly improved; and the efficiency of the HIT battery is effectively improved.

The invention provides a corrosion resistant natural color passivation solution for an aluminum alloy die pressed casting. The passivation solution is prepared from the following components in percentage by mass: 1 to 10 percent of trivalent chromium salt, 1 to 8 percent of zirconium salt compound, 0.1 to 5 percent of mixed accelerant, 0.01 to 0.05 percent of surfactant and the balance of water, wherein the mixed accelerant is a mixture of cobalt salt, sodium fluoride and sodium nitrate with a mass ratio of (0.5 to 2) to (0.5 to 2) to (5 to 15). The invention also provides a preparation methodof the passivation solution and a method for performing corrosion resistant natural color passivation treatment on the surface of the aluminum alloy die pressed casting. A film obtained by the methodhas natural color, is uniform and dense, has strong corrosion resistance and good conductivity and does not affect natural color metal texture of die-cast aluminum.

The invention relates to an automatic spraying system of galvanized pipe passivation liquid. The automatic spraying system is characterized by being composed of a passivation liquid storage box, a filter tank, a spraying base, a spraying cover and atomization spraying mechanisms, a water suction pump is arranged in the passivation liquid storage tank, the upper portion of the spraying base is covered with the spraying cover, openings for a pipeline to pass through are formed in the left end and the right end of the spraying cover, the atomization spraying mechanisms arranged with one above the other are installed on the front cover wall and the rear cover wall of the spraying cover respectively, steam outlets are formed in the two ends of the lower portion of the spraying cover and connected with the inlet of the filter tank through a three-way pipeline, the outlet of the filter tank is connected to the passivation liquid storage box through a pipeline, and a liquid outlet is formed in the bottom of the spraying base and connected to the passivation liquid box through a pipeline connected with a negative pressure machine. The automatic spraying system is scientific and reasonable in structural design, and has the advantages of being uniform in passivation liquid attachment, high in passivation efficiency, capable of ensuring surface attractiveness of steel pipes and reducing passivation cost, convenient to operate and easy to obtain.

The invention relates to the technical field of preparation methods of a-Si: H, in particular to a method for preparing an a-Si: H thin film based on hydrogen plasma treatment. The method includes steps that a, SiH4 is decomposed in a depositing cavity to deposit the a-Si: H thin film; and b, depositing stops, remaining gas in the depositing cavity is discharged, then H2 is introduced into the depositing cavity, and is decomposed to form hydrogen plasma which acts on an amorphous silicon thin film, and the step a and the step b are alternately adopted to finally obtain the a-Si: H thin film ata set thickness. The method has the beneficial effects that compared with the prior art, according to the periodically alternated hydrogen plasma treatment process adopted by the method, by interrupting production of low-order silicon and hydrogen elements or etching the a-Si: H thin film high in content of the low-order silicon and hydrogen elements, the passivating quality is remarkably improved; and more atomic hydrogen is injected into the a-Si: H thin film, in cooperation with the later period high temperature fast heat treatment process, a basis is laid for filling up the electrical defects in the a-Si: H thin film and saturating the dangling bond state of the c-Si surface, and therefore the passivating quality is remarkably improved.

The invention aims to disclose a TOPCON passivation structure and a preparation method thereof. The TOPCON passivation structure comprises an N type or P type silicon wafer substrate, wherein a tunneling silicon dioxide layer, a doped polycrystalline silicon layer/amorphous silicon layer of a TOPCon structure, a phosphorus-containing silicon oxide layer SiOx:P or a boron-containing silicon oxide layer SiOx:B and a SiNx top cover layer are sequentially arranged on the surface of the silicon wafer substrate from inside to outside. Compared with the prior art, the TOPCON passivation structure ofthe invention has the following characteristics that a phosphorus-containing silicon oxide layer SiOx:P or boron-containing silicon oxide layer SiOx:B growing in an annealing process is used as the surface passivation layer of the TOPCon structure of the solar cell, so that the growth of the surface passivation layer of the doped layer is realized without an additional process, the preparation process flow of the solar cell is simplified, the passivation quality of the TOPCon structure to the doped layer of the silicon wafer substrate is improved, and the purpose of the invention is realized.

The invention discloses a water-based paint coating process after metallization and silver plating of a common material antenna. The water-based paint coating process comprises the following steps that S1, a 5G frequency band standard is set for a terminal client, the frequency band, the antenna layout and the requirements are met by the terminal client, and an antenna line is designed for a product covered under a mainboard; and S2, according to the line mold design in the step S1, the punching and shutting off requirement is met, burrs generated by mold punching are optimized through laser punching, the glue thickness of a punched hole is controlled to be 0.03 mm, and the product with the thickness being 0.1 mm touches the punching burrs; and injection molding is carried out according to the designed content. According to the water-based paint coating process after metallization and silver plating of the common material antenna, the appearance surface of the common material is subjected to chemical plating to generate the metallized antenna, the bottleneck of the LDS raw material is broken through, the chemical plating antenna metallization process is optimized, metalized chemical plating antenna can be completed by using any shape of the common material as reserved size, so that the internal clearance space of a mobile phone can be effectively improved, and the radio frequency signal of the mobile phone can be improved; and the silver plating mode meets the nickel-containing standard, and the surface flatness of the chemical silver plating layer is high.

The invention discloses a compartment type passivation device used for threaded carding tool edges. The compartment type passivation device comprises a motor, stepless speed regulators, a transmission shaft, a passivation container and a base. The motor is connected with the transmission shaft through the stepless speed regulators, multiple installing shafts used for fixing carding tools are arranged inside the passivation container and sleeved with the multiple threaded carding tools, every two threaded carding tools are spaced through a spring, the transmission shaft is sleeved with eccentric wheels placed below the passivation container, and compression springs are arranged above the base and tightly attached to the transmission shaft. In this way, the passivation quality and efficiency can be improved, and the service life of blades can be prolonged.

The invention relates to a micro cutter passivation method and device based on flexible abrasive particles and magnetic composite fluid, a cutting edge of a micro cutter is treated by adopting a magnetic composite fluid polishing principle, and a material on the surface of the cutter is slightly removed by utilizing the rheological property of the magnetic composite fluid and the flexible abrasive particles. Cutting edge passivation treatment and surface polishing treatment of the cutter can be achieved at the same time, and the cutter is high in passivation precision and good in consistency; batch passivation of the miniature cutters is achieved through the multi-clamp design, cutter passivation work and disassembly and assembly operation can be carried out at the same time, and the cutter passivation efficiency is improved. According to the micro cutter passivation method and device based on the flexible abrasive particles and the magnetic composite fluid, micro defects of a cutting edge of a micro cutter can be effectively removed, the contour shape of the cutting edge is improved, tiny burrs on the surface of the cutter are eliminated, the surface quality of the cutter is improved, the service life of the cutter is prolonged, and the part machining quality is improved; and high-precision and high-efficiency passivation treatment on the micro cutter is realized.

The invention relates to passivation treatment equipment, in particular to electroplated part treatment equipment. The technical problem to be solved is to provide the electroplated part treatment equipment which can tightly and stably press an electroplated part and can prevent a passivation solution from splashing. The electroplated part treatment equipment comprises a circulating box, an injection pipe, a discharge pipe, a first mounting rod and the like, an injection pipe is connected to the rear side of the upper part of the circulating box, a discharge pipe is connected to the front side of the lower part of the circulating box, and first mounting rods are symmetrically connected to the left and right sides of the lower part of the circulating box. According to the passivating device, a driving gear moves up and down, is meshed with a rack, drives a swing rod to rotate alternately in the positive and negative directions and is matched with a wedge-shaped plate, so that a passivating frame is finally pushed to swing back and forth in a reciprocating manner, the effect of uniformly passivating an electroplated part is achieved, and the passivating quality of the electroplated part is improved; the first pressing plate and the second pressing plate are fixed to the passivation frame, so that the electroplated part is pressed and limited, and the effect that the electroplated part is pressed in the passivation frame can be achieved.

The invention discloses a post-treatment process of a high-gloss formed cutter. The post-treatment process comprises the following steps that a cutter hole is formed in the center of a clamp, the part, directly participating in polishing, of the clamp is arranged to be in a cutter profile shape according to distribution of cutter edges, it is ensured that the distances between all the positions ofthe cutter and the clamp are equal, and four evenly-distributed pressure relief holes are additionally formed in the clamp; an abrasive material for cutter fluid polishing is made of a macromoleculesemi-solid carrier and abrasive grains in a mixed configuration mode according to the ratio of 3:2; and the fluid polishing process is conducted through the steps that (1) a power switch of a polisheris turned on, the configured abrasive material for cutter fluid polishing is put into a lower cylinder of the polisher, the clamp is fixed to a worktable, and the to-be-passivated cutter is fixed tothe clamp; (2) the polishing time and the abrasive material pressure are set, a machine is started, pistons in an upper cylinder and the lower cylinder make reciprocating movement at a constant speed,thus the abrasive grains flow through the cutter and edge openings uniformly, and polishing passivation is completed; and (3) after being polished, the cutter is taken out, and replaced with a new to-be-polished cutter. Overall force bearing is uniform and constant, the passivation effect is ensured, and the passivation time is saved.