Monocrystalline silicon wafer with rounded pyramid structure and preparation method

A technology of pyramid structure, single crystal silicon wafer, applied in the direction of final product manufacturing, sustainable manufacturing/processing, photovoltaic power generation, etc., can solve the problem that the pyramid top and tower valley are smooth, affect the passivation effect, and the sharp position is difficult to cover the non-contact surface. Crystal silicon passivation layer and other problems, to achieve the effect of reducing the density of defect states, improving passivation quality and minority carrier lifetime, and high cell conversion efficiency

Inactive Publication Date: 2020-07-10
ZHONGWEI NEW ENERGY CHENGDU CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In the preparation process of heterojunction solar cells, there are the following disadvantages: the top and valley of the textured pyramid formed by the existing filleting treatment method are relatively sharp acute angles, or the top and valley of the pyramid cannot be smoothed at the same time, resulting in The sharp position is difficult to cover the amorphous silicon passivation layer, thus affecting the passivation effect. In order to achieve the smooth effect of the pyramid top and the valley at the same time, which is more conducive to the deposition of the amorphous silicon film and further improves the passivation quality, a new method is proposed. Monocrystalline silicon chip with rounded pyramid structure and preparation method thereof

Method used

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  • Monocrystalline silicon wafer with rounded pyramid structure and preparation method
  • Monocrystalline silicon wafer with rounded pyramid structure and preparation method
  • Monocrystalline silicon wafer with rounded pyramid structure and preparation method

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Experimental program
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Effect test

Embodiment 1

[0043] Embodiment 1 is to carry out nitric acid CP first, then carry out ozone CP, and concrete steps are as follows:

[0044] Step 1: Pre-cleaning, cleaning the silicon wafer in a mixed solution of hydrogen peroxide and KOH, the mass fraction of KOH is 1%, the mass fraction of hydrogen peroxide is 3%, the temperature is 65°C, and the time is 5min. After pre-cleaning, in pure water Rinse silicon wafer for 3 minutes;

[0045] Step 2: Texturing, the mass fraction of KOH in the texturing solution is 7%, and the texturing additive is an additive from Hayashi Pure HPC Company in Japan, and the ratio of the additive to pure water is TT72C13:TK81:DIW=1:7.5:18.4. Put the silicon wafer treated in step 1 into the texturing solution for texturing at a temperature of 85° C. for 15 minutes, and rinse the silicon wafer in pure water for 3 minutes after texturing;

[0046] Step 3: SC1 cleaning, cleaning the silicon wafer in a mixed solution of hydrogen peroxide and KOH, the mass fraction of...

Embodiment 2

[0053] Embodiment 2 is to carry out ozone CP first, then carry out nitric acid CP, and concrete steps are as follows:

[0054] Step 1: Pre-cleaning, cleaning the silicon wafer in a mixed solution of hydrogen peroxide and KOH, the mass fraction of KOH is 1%, the mass fraction of hydrogen peroxide is 3%, the temperature is 65°C, and the time is 5min. After pre-cleaning, in pure water Rinse silicon wafer for 3 minutes;

[0055] Step 2: Texturing, the mass fraction of KOH in the texturing solution is 7%, and the texturing additive is an additive from Hayashi Pure HPC Company in Japan, and the ratio of the additive to pure water is TT72C13:TK81:DIW=1:7.5:18.4. Put the silicon wafer treated in step 1 into the texturing solution for texturing at a temperature of 85° C. for 15 minutes, and rinse the silicon wafer in pure water for 3 minutes after texturing;

[0056] Step 3: SC1 cleaning, cleaning the silicon wafer in a mixed solution of hydrogen peroxide and KOH, the mass fraction of...

Embodiment 3

[0063] Embodiment 3 is to carry out ozone CP and nitric acid CP simultaneously, and concrete steps are as follows:

[0064] Step 1: Pre-cleaning, cleaning the silicon wafer in a mixed solution of hydrogen peroxide and KOH, the mass fraction of KOH is 1%, the mass fraction of hydrogen peroxide is 3%, the temperature is 65°C, and the time is 5min. After pre-cleaning, in pure water Rinse silicon wafer for 3 minutes;

[0065] Step 2: Texturing, the mass fraction of KOH in the texturing solution is 7%, and the texturing additive is an additive from Hayashi Pure HPC Company in Japan, and the ratio of the additive to pure water is TT72C13:TK81:DIW=1:7.5:18.4. Put the silicon wafer treated in step 1 into the texturing solution for texturing at a temperature of 85° C. for 15 minutes, and rinse the silicon wafer in pure water for 3 minutes after texturing;

[0066] Step 3: SC1 cleaning, cleaning the silicon wafer in a mixed solution of hydrogen peroxide and KOH, the mass fraction of KO...

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Abstract

The invention discloses a monocrystalline silicon wafer with a rounded pyramid structure and a preparation method, and mainly relates to the field of monocrystalline texturing. The preparation methodcomprises the steps of pre-cleaning, texturing, rounding treatment, hydrofluoric acid cleaning, slow pulling, drying, and the like. In the rounded treatment process, respective characteristics of nitric acid CP and ozone CP are integrated. Pyramid rounding treatment is performed on a textured silicon wafer by using the scheme, so that the pyramid top and the pyramid valley are enabled to be smooth, the defect state density can be reduced when the amorphous silicon film is deposited, the passivation quality of the silicon wafer can be enhanced, the minority carrier lifetime can be prolonged, and thus higher cell conversion efficiency can be obtained.

Description

technical field [0001] The invention relates to the field of monocrystalline silicon materials, in particular to a monocrystalline silicon wafer with a rounded pyramid structure and a preparation method thereof. Background technique [0002] In the manufacturing process of monocrystalline silicon solar cells, a pyramid-shaped light-trapping structure can be formed on the surface of the silicon wafer through wet texturing, and sunlight is reflected twice on the surface of the pyramid, thereby increasing the light absorption rate of the silicon wafer and improving solar radiation. The current density and photoelectric conversion efficiency of the battery; this light-trapping texture is formed by anisotropic etching of silicon wafers in alkaline solution. [0003] For the manufacture of heterojunction solar cells, not only the pyramid texture is required to have a low reflectivity, but also the microstructure of the pyramid surface has special requirements; it is usually used t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0236H01L31/042H01L31/18
CPCH01L31/02363H01L31/042H01L31/1804Y02E10/50Y02P70/50
Inventor 杜俊霖刘正新孟凡英付昊鑫孙林
Owner ZHONGWEI NEW ENERGY CHENGDU CO LTD
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