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TOPCON passivation structure and preparation method thereof

An N-type, device technology, applied in the field of passivation structure and its preparation, can solve the problems of poor passivation effect and affecting the passivation quality of silicon substrate doped layer, etc.

Inactive Publication Date: 2020-08-07
SPIC XIAN SOLAR POWER CO LTD +3
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Problems solved by technology

[0004] The conventional TOPCon passivation structure doped polysilicon / amorphous silicon surface uses SiNx as the passivation layer. Since SiNx has a poor passivation effect on the polysilicon / amorphous silicon surface, it affects the passivation quality of the TOPCon structure on the doped layer of the silicon matrix. Further improvement of limited battery conversion efficiency

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  • TOPCON passivation structure and preparation method thereof

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Embodiment Construction

[0024] In order to make the technical means, creative features, objectives and effects of the present invention easy to understand, the present invention will be further explained in conjunction with specific drawings.

[0025] according to figure 1 As shown, the TOPCON passivation structure provided by the present invention includes an N-type or P-type silicon wafer substrate 100. The front surface of the silicon wafer substrate 100 is a suede surface, and the back surface is a polished or suede surface; the surface of the silicon wafer substrate 100 is composed of A tunneling silicon dioxide layer 101, a doped polysilicon layer / amorphous silicon layer 102 with a TOPCon structure, a passivation layer 103, and a SiNx cap layer 104 are sequentially arranged from the inside to the outside; the thickness of the tunneling silicon dioxide layer 101 is 0 The thickness of the doped polysilicon layer or amorphous silicon layer 102 of the TOPCon structure is 5-5000 nm, the thickness of th...

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Abstract

The invention aims to disclose a TOPCON passivation structure and a preparation method thereof. The TOPCON passivation structure comprises an N type or P type silicon wafer substrate, wherein a tunneling silicon dioxide layer, a doped polycrystalline silicon layer / amorphous silicon layer of a TOPCon structure, a phosphorus-containing silicon oxide layer SiOx:P or a boron-containing silicon oxide layer SiOx:B and a SiNx top cover layer are sequentially arranged on the surface of the silicon wafer substrate from inside to outside. Compared with the prior art, the TOPCON passivation structure ofthe invention has the following characteristics that a phosphorus-containing silicon oxide layer SiOx:P or boron-containing silicon oxide layer SiOx:B growing in an annealing process is used as the surface passivation layer of the TOPCon structure of the solar cell, so that the growth of the surface passivation layer of the doped layer is realized without an additional process, the preparation process flow of the solar cell is simplified, the passivation quality of the TOPCon structure to the doped layer of the silicon wafer substrate is improved, and the purpose of the invention is realized.

Description

Technical field [0001] The invention relates to a passivation structure of a solar cell and a preparation method thereof, in particular to a TOPCON passivation structure and a preparation method thereof. Background technique [0002] Photovoltaic power generation is currently one of the main ways to use solar energy. Because of its clean, safe, convenient and high-efficiency characteristics, solar photovoltaic power generation has become an emerging industry that is generally concerned and developed by all countries in the world. Therefore, in-depth research and utilization of solar energy resources are of great significance to alleviating the resource crisis and improving the ecological environment. [0003] The TOPCon passivation structure combines the advantages of chemical passivation and field passivation. Compared with the traditional chemical passivation structure SiOx and the field passivation structure AlOx, SiNx, the TOPCon passivation structure has a better effect on the...

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Application Information

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IPC IPC(8): H01L31/0216H01L31/18
CPCH01L31/02167H01L31/1868Y02E10/50Y02P70/50
Inventor 屈小勇高嘉庆张博胡林娜
Owner SPIC XIAN SOLAR POWER CO LTD
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