Silicon-based solar cell and preparation method thereof

A solar cell, silicon-based technology, applied in the field of solar cells, can solve the problems of poor photoelectric conversion efficiency of solar cells, poor compactness of PEDOT:PSS layer, etc.

Active Publication Date: 2018-03-06
FRESH SOURCE INT INC
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  • Abstract
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  • Application Information

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Problems solved by technology

Wherein the typical representative in organic-inorganic hybrid solar cell is Si / PEDOT:PSS hybrid solar cell, in the preparation process of conventional Si / PEDOT:PSS hybrid solar cell, usually simply spin-coat PEDOT on silicon substrate: PSS solution and annealed to form a PEDOT:PSS layer, while the PEDOT:PSS layer prepared by the existing method has poor density, which leads to poor photoelectric conversion efficiency of Si / PEDOT:PSS hybrid solar cells

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  • Silicon-based solar cell and preparation method thereof

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[0016] The preparation method of a kind of silicon-based solar cell specifically proposed by the present invention comprises the following steps: 1) cleaning the n-type silicon wafer; 2) carrying out surface passivation treatment to the n-type silicon wafer; 3) the first PEDOT:PSS layer Preparation: the front spin-coating concentration of the n-type silicon wafer obtained in step 2 is a PEDOT:PSS solution with a concentration of 15-18mg / ml, wherein the rotating speed is 1500-1900 rpm, and then annealed to form the first PEDOT: PSS layer; 4) Preparation of the second PEDOT:PSS layer: the front spin-coating concentration of the n-type silicon wafer obtained in step 3 is the PEDOT:PSS solution of 12-14mg / ml, wherein the rotating speed is 2000-2400 rpm , and then carry out annealing treatment to form the second PEDOT:PSS layer; 5) preparation of the third PEDOT:PSS layer: the front spin coating concentration of the n-type silicon wafer obtained in step 4 is the PEDOT:PSS solution o...

Embodiment 1

[0020] A method for preparing a silicon-based solar cell, comprising the following steps: 1) cleaning the n-type silicon wafer; 2) carrying out surface passivation treatment to the n-type silicon wafer; 3) preparing the first PEDOT:PSS layer: in the step 2. The front spin-coating concentration of the obtained n-type silicon chip is the PEDOT:PSS solution of 16mg / ml, wherein, the rotating speed is 1700 rpm, and then annealing is performed to form the first PEDOT:PSS layer; 4) the second PEDOT: Preparation of the PSS layer: the front spin-coating concentration of the n-type silicon wafer obtained in step 3 is a PEDOT:PSS solution with a concentration of 13mg / ml, wherein the rotating speed is 2100 rpm, and then annealed to form the second PEDOT:PSS layer ; 5) Preparation of the third PEDOT:PSS layer: the front spin coating concentration of the n-type silicon wafer obtained in step 4 is a PEDOT:PSS solution of 10mg / ml, wherein the rotating speed is 3100 rpm, and then annealed, For...

Embodiment 2

[0024] A method for preparing a silicon-based solar cell, comprising the following steps: 1) cleaning the n-type silicon wafer; 2) carrying out surface passivation treatment to the n-type silicon wafer; 3) preparing the first PEDOT:PSS layer: in the step 2. The front spin-coating concentration of the obtained n-type silicon chip is the PEDOT:PSS solution of 18mg / ml, wherein, the rotating speed is 1900 rpm, and then annealing is performed to form the first PEDOT:PSS layer; 4) the second PEDOT: Preparation of the PSS layer: the front spin-coating concentration of the n-type silicon wafer obtained in step 3 is a PEDOT:PSS solution with a concentration of 14mg / ml, wherein the rotating speed is 2400 rpm, and then annealed to form the second PEDOT:PSS layer 5) Preparation of the third PEDOT:PSS layer: the front spin-coating concentration of the n-type silicon wafer obtained in step 4 is a PEDOT:PSS solution of 11 mg / ml, wherein the rotating speed is 3400 rpm, and then annealed, Form...

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Abstract

The invention relates to a silicon-based solar cell and a preparation method thereof and belongs to the technical field of solar cells. The preparation method comprises the steps of cleaning of a n-type silicon sheet, surface passivation treatment of the n-type silicon sheet, preparation of a first PEDOT:PSS layer, preparation of a second PEDOT:PSS layer, preparation of a third PEDOT:PSS layer, preparation of a fourth PEDOT:PSS layer, preparation of a fifth PEDOT:PSS layer, preparation of a front electrode, and preparation of a back electrode. The photoelectric conversion efficiency of the silicon-based solar cell reaches up to 12.4%.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a silicon-based solar cell and a preparation method thereof. Background technique [0002] Silicon-based solar cells mainly include monocrystalline silicon solar cells, amorphous silicon thin-film solar cells, polycrystalline silicon thin-film solar cells, and organic-inorganic hybrid solar cells. Wherein the typical representative in organic-inorganic hybrid solar cell is Si / PEDOT:PSS hybrid solar cell, in the preparation process of conventional Si / PEDOT:PSS hybrid solar cell, usually simply spin-coat PEDOT on silicon substrate: PSS solution and annealing to form a PEDOT:PSS layer, while the PEDOT:PSS layer prepared by the existing method has poor density, which leads to poor photoelectric conversion efficiency of Si / PEDOT:PSS hybrid solar cells. How to design a novel Si / PEDOT:PSS hybrid solar cell preparation process to improve its photoelectric conversion efficiency is an...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/042H01L31/0224H01L31/18
CPCH01L31/022425H01L31/042H01L31/1804Y02E10/547Y02P70/50
Inventor 张军
Owner FRESH SOURCE INT INC
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