Metal oxide thin film transistor and manufacturing method thereof

An oxide thin film and oxide semiconductor technology, applied in transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve the problem of difficult to achieve industrialized production of thin film transistors with simple process, low cost and high stability, harsh experimental conditions, and high reliability. Problems such as poor repeatability, to achieve the effect of light stability, good uniformity, and improved stability

Inactive Publication Date: 2017-03-22
SHAANXI NORMAL UNIV
View PDF1 Cites 12 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Existing technical methods require relatively harsh experimental conditions in the implementation process. Some require high temperature and high pressure, very expensive equipment or comp

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Metal oxide thin film transistor and manufacturing method thereof
  • Metal oxide thin film transistor and manufacturing method thereof
  • Metal oxide thin film transistor and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0032] A method for preparing a metal oxide thin film transistor, comprising the steps of:

[0033] 1) Preparation of metal oxide semiconductor thin films: based on figure 1 Structure After the gate 2 and the gate insulating layer 3 are prepared, when the metal oxide semiconductor layer 4 is prepared by magnetron sputtering, the target material is indium gallium zinc oxide as an example, the deposition gas atmosphere is nitrogen and oxygen, and the ratio is 29.4 : 0.6sccm, the deposition temperature is 150°C, the deposition power is 180W, the deposition pressure is 1Pa, and the deposition thickness is 50nm.

[0034] 2) Refer to figure 1Then a barrier layer 5 is prepared with a thickness of 100 nm.

[0035] 3) Preparation of fluorine-doped silicon nitride thin film layer 6: After step 2), fluorine-doped silicon nitride is prepared by plasma-enhanced chemical vapor deposition, and the deposition gas atmosphere is silicon tetrafluoride, nitrous oxide, and nitrogen. The flow ra...

example 2

[0041] A method for preparing a metal oxide thin film transistor, comprising the steps of:

[0042] 1) Preparation of metal oxide semiconductor thin films: based on figure 1 Structure After the gate 2 and the gate insulating layer 3 are prepared, when the metal oxide semiconductor layer 4 is prepared by non-vacuum chemical vapor deposition, taking indium zinc oxide as an example, the precursor liquid is zinc fluoride and indium acetate, and the solvent is water and methanol , 10 and 90 mL respectively, stirred at room temperature for 3 hours, and then filtered through a 0.2 μm filter. The deposition conditions are as follows, the deposition gas is air, the deposition temperature is 350° C., and the deposition thickness is 45 nm.

[0043] 2) Refer to figure 1 Then a barrier layer 5 is prepared with a thickness of 50 nm.

[0044] 3) Preparation of nitrogen-doped silicon oxide thin film layer 6: After step 2), nitrogen-doped silicon oxide is prepared by magnetron sputtering, t...

example 3

[0050] A method for preparing a metal oxide thin film transistor, comprising the steps of:

[0051] 1) Preparation of metal oxide semiconductor thin films: based on figure 1 Structure After preparing the gate 2 and the gate insulating layer 3, when preparing the metal oxide semiconductor layer 4 by spin coating, taking indium zinc oxide as an example, the precursor solution is 0.1M zinc acetate, 0.1M indium nitrate, the solvent is water, and the room temperature Stir for 3 hours, then filter with a 0.2 μm filter. After that, it was spin-coated at 4000rpm for 30s, and then heat-treated at 250°C for 1 hour in air atmosphere.

[0052] 2) Refer to figure 1 Then a barrier layer 5 is prepared with a thickness of 150 nm.

[0053] 3) Preparation of hydrogen-doped silicon nitride thin film layer 6: After step 2), hydrogen-doped silicon nitride is prepared by plasma enhanced chemical vapor deposition. The deposition gas atmosphere is silicon tetrafluoride, ammonia, nitrogen, and the ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention provides a metal oxide thin film transistor and a manufacturing method thereof. The metal oxide thin film transistor comprises a substrate, a gate, a gate insulating layer, a metal oxide semiconductor layer and a barrier layer hierarchically arranged on the substrate, a passivation layer arranged at the outermost layer, as well as a source and a drain connected with the metal oxide semiconductor layer respectively; a diffusion element containing insulator thin film layer adjacent to the barrier layer is arranged on the side opposite to the metal oxide semiconductor layer; and the diffusion element is any one of fluorine, nitrogen and hydrogen elements. The manufacturing method comprises the steps of arranging the diffusion element containing insulator thin film layer adjacent to the barrier layer on the side opposite to the metal oxide semiconductor layer, wherein the diffusion element is any one of fluorine, nitrogen and hydrogen elements; and diffusing the fluorine, nitrogen or hydrogen element to the metal oxide semiconductor layer of the thin film transistor via a thermal diffusion method, till reaching the metal oxide semiconductor thin film and the interface of the gate insulating layer.

Description

technical field [0001] The invention relates to the field of preparation of metal oxide thin film transistors, in particular to a metal oxide thin film transistor and a preparation method thereof. Background technique [0002] As the core component of the active switching / driving of each pixel of a display device, thin film transistors have been widely used in flat panel displays such as organic electroluminescent displays and liquid crystal displays. As a bridge between people and various electronic products, flat panel displays, with the development of modern industry and the continuous improvement of people's living standards, the next generation of display technology will not only further improve the display quality, but also gradually expand to large-area, high-resolution High-speed, thin, flexible and rollable type. Traditional silicon-based thin-film transistors are no longer sufficient for next-generation display technologies. However, metal oxide semiconductor mat...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L29/12H01L21/336H01L29/786
CPCH01L29/786H01L29/12H01L29/66742
Inventor 王大鹏
Owner SHAANXI NORMAL UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap