Grain boundary passivation method of perovskite solar cell

A solar cell and perovskite technology, applied in the field of solar cells, can solve the problems of perovskite thin film charge recombination, performance degradation of photovoltaic devices, etc., achieve reduction of internal defect state density, passivation of perovskite grain boundaries, and simple method easy-to-use effects

Active Publication Date: 2021-07-09
HEFEI UNIV OF TECH
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Studies have shown that the grain boundary defects of perovskite films are the key factors restricting the photoelectric conversion e

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Grain boundary passivation method of perovskite solar cell
  • Grain boundary passivation method of perovskite solar cell
  • Grain boundary passivation method of perovskite solar cell

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0027] Example 1:

[0028] 1. Cleaning of the conductive substrate: use detergent, deionized water, acetone, ethanol, and isopropyl alcohol to perform ultrasonic waves by ultrasonic waves by ultrasonic cleaning, and then blow it with a nitrogen gas gun after cleaning. Then perform UVO treatment 25min ~ 30min;

[0029] 2, TiO 2 Preparation of the electron transport layer: 125 μl of diisopropoxy double acetylacettone titanite solution and 1590 μl of n-butyl alcohol were stirred for 1 h, and then the mixed solution droplets were dripped to the FTO glass first with 500 rpm 3s, and then rotated at 2000 rpm 30s, and finally 135 ° C is annealing for 10 min, then sintered at 500 ° C for 30 min to get TiO 2 Determination, TIO 2 After 20 min after the meso film substrate ozone treatment, transfer to N 2 Atmosphere glove box;

[0030] 3, preparation of perovskite layer: 100ml Mapbi 3 Perovanium-titanium precursor solution is covered with TiO 2 On the electron transport layer, spin coating is...

Example Embodiment

[0036] Example 2:

[0037] 1. Cleaning of the conductive substrate: use detergent, deionized water, acetone, ethanol, and isopropyl alcohol to perform ultrasonic waves by ultrasonic waves by ultrasonic cleaning, and then blow it with a nitrogen gas gun after cleaning. Then perform UVO treatment 25min ~ 30min;

[0038] 2. Preparation of different electron transport layers: (1) TIO 2 125 μl of diisopropoxy double acetylacetone titanite titanium solution and 1590 μl of n-butanol were stirred for 1 h, followed by rotating the mixed solution to the FTO glass first with 500 rpm 3s, and then rotated at 2000 rpm 30s, last 135 ° C annealing for 10 min, Then sinter at 500 ° C for 30 min to get TiO 2 Determination; (2) SNO 2 : Commercial SNO 2 The aqueous solution and deionized water were mixed according to a volume ratio of 1: 7, and then spin coating was carried out on the wash FTO, and the rotational speed was 3000 rpm, and the time 30s. After the spin coating, heated at 150 ° C on the he...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a grain boundary passivation method of a perovskite solar cell. The grain boundary passivation method comprises the following steps: firstly, synthesizing nanoscale C6H6NNaO6Pb quantum dots by utilizing a room-temperature solution reaction which is simple to operate; and uniformly dispersing the synthesized quantum dots in an anti-solvent in the process of preparing the perovskite thin film by a one-step method, so that the quantum dots are uniformly distributed in the perovskite thin film to realize perovskite grain boundary passivation. According to the invention, the perovskite grain boundary defect state density can be effectively reduced, and the quality of the perovskite thin film is improved, so that the efficient and stable perovskite solar cell is obtained. The preparation method is simple in process and low in cost, and has a good application prospect in the aspect of developing high-performance perovskite solar cells.

Description

technical field [0001] The invention belongs to the technical field of solar cells, and in particular relates to a grain boundary passivation method for perovskite solar cells. Background technique [0002] So far, solar cells can be mainly divided into three categories: first-generation crystalline silicon solar cells, second-generation compound thin-film solar cells, and third-generation new solar cells. Among them, perovskite solar cells, as the leader of new solar cells, have attracted extensive attention from researchers due to their advantages such as high light absorption coefficient, adjustable band gap, low cost, and simple preparation. In recent years, thanks to the active efforts of researchers in the fields of perovskite morphology control, battery structure, device physics, interface engineering, energy band engineering, etc., perovskite solar cells have achieved rapid development, and the photoelectric conversion efficiency of the device has increased by 2009 ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L51/48H01L51/44
CPCH10K71/00H10K30/88Y02E10/549
Inventor 周儒李孝章胡棕源王欢万磊牛海红
Owner HEFEI UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap