Multi-step deposition-based efficient crystalline silicon heterojunction solar cell electrode structure and preparation method thereof

Abstract

The invention relates to a multi-step deposition-based efficient crystalline silicon heterojunction solar cell electrode structure and a preparation method thereof. The structure comprises an N-type crystalline wafer; multiple non-crystalline silicon intrinsic layers are arranged on both the front and back of the N-type crystalline wafer; non-crystalline silicon doping layers are arranged on the outer sides of the non-crystalline silicon intrinsic layers on the front and back; RCO conductive films are arranged on the outer sides of the non-crystalline silicon doping layers; a plurality of Ag electrodes are arranged on the outer sides of the TCO conductive films; an H plasma processing layer is arranged between every two adjacent non-crystalline silicon intrinsic layers; and an H plasma processing layer is arranged between the outermost non-crystalline silicon intrinsic layer and non-crystalline silicon doping layer. The structure adopts multiple steps to deposit the non-crystalline silicon intrinsic layers, and a step of H plasma processing is added after each step of deposition, so that the H atom content in the film can be increased to improve the passivation effect, for the crystalline silicon surfaces, of the non-crystalline silicon intrinsic layers, and the defect mode density of the non-crystalline silicon intrinsic layers can be reduced to enhance the photoelectric conversion efficiency of solar cells.

Description

technical field [0001] The invention relates to the technical field of photovoltaic high-efficiency cells, in particular to a multi-step deposited high-efficiency crystalline silicon heterojunction solar cell electrode structure and a preparation method thereof. Background technique [0002] The "Photovoltaic Leader Program" is a special plan for photovoltaic support planned by the National Energy Administration to be implemented every year since 2015. It is intended to promote the progress of photovoltaic power generation technology, industrial upgrading, market application and cost reduction. Through market support and testing Demonstration, point to area, accelerate the transformation of technological achievements into market applications, and eliminate outdated technologies and production capacity, so as to achieve the goal of grid parity on the photovoltaic power generation side in 2020. The technologies and components used in the "Top Runner" program are absolutely lea...

AI Technical Summary

Problems solved by technology

The existing technology is to directly deposit the P layer and the N layer after the deposition of the intrinsic layer of amorphous silicon. The content of H atoms in the directly deposited intrinsic thin layer of amorphous silicon is small, and the intrinsic layer of amorphous silicon has many dangling bond defects. , neither can effectively passivate the dangling bonds on the surface of crystalline silicon, reduce the density of interface defect states, and because of its own dangling bond defects, it will have a negative impact on the electrical properties of HJT solar cells, which cannot meet the needs of high-efficiency HJT solar cells, and cannot Further improve the photoelectric conversion efficiency of solar cells

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